The growth of ZnSe-ZnTe strained-layer superlattices on CaF

2

(111) substrate by atmospheric pressure metal organic chemical vapor deposition is reported for the first time. The typical growth conditions are shown in Table 1. The critical thickness of ZnTe/CaF

2

heterojuncticn is appraised as 2nm. With X-ray diffraction measurement

we observe many satellites of ZnSe-ZnTe SLS around(333) reflection

which confirms the formation of the period structure of superlattices

and shown in. Fig.1.The lattice parameters of ZnTe

Zr.Se and CaF

2

are 0.6101 nm

0.56686 nm

0.54626 nm

corresponding to the Bragg diffraction angles 29 around (333) reflection 82.00

89.837 and 94.231 degree

respectively. We found that the satellites around the ZnSe Bragg angle are very strong

while the satellites around ZnTe Brafg argle are too weak to observe them in Fig.1. So the thickness of ZnSe layers is much larger than that of ZnTe layers.Using the zero-order peak corresponding to the average perpendicular lattice parameter and the superlattice periodicity calculation

we obtain the data of ZnSe and ZnTe layers a.s 6nm

0.6nm

respectively.For ZnSe (6nm)-ZnTe(0.6nm) SLS/CaF

2

(111)

the first ZnTe layer on substrate CaF

2

can not be accommodated by elastic deformation

and the lattice constant of the SLS parallel to the surface determined by Eq.1 does not equal the lattice constant of the substrate.Fig.2 is the photoluminescence emission spectrum of ZnSe (6nm)-ZnTe(0.6nm) SLS/CaF

2

with the excitation of the line 337.1nm of N

2

-laser at 77K. The peak value is 630nm which shows the existence of strain and quantum confinement effects. Fig.3 is the optical absorption spectrum of ZnSe(6nm)-ZnTe(0.6nm) SLS on CaF

2

transparent substrate with the measurement of UV-3000 Double Wave-length/Dual Beam Recording Spectrophotometer at room temperature. The first absorption peak at 640nm is thought to be the optical absorption due to the transition Between the

n

=1 electronic subband in ZnSe layers and the

n

=1 heavy hole subband in ZnTe layers.