A new a-SiC:H/pin potential well structure visible-light injection-electroluminescent device has been designed. The band gaps of p and n a-SiC:H layer are larger than that of i layer

so the injection carrier can be confined in luminescent active i layer.Two types of samples

potential well structure and potential barrier structure devices

were prepared under same conditions. Results of the measurement of electroluminescence intensity versus injection current show that potential well structure is better than potential barrier structure. Transient electroluminescence was also measured. The electroluminescence has a delay time that decreases as the pulsed excitation current increases. Luminescence lifetime is about 0.3μs. It doesn't vary with the excitation current.