Raman backscattering techniques have been used to measure the phonon spectra of ZnSe-ZnS strained layer superlattices (SLSs) on CaF

2

(111) and GaAs (100) substrates grown by atmospheric pressure metal-organic chemical vapor deposition. CaF

2

is a transparent substrate for visible region

and is a good substrate for Raman scattering measurement.In part 1 of the paper

we briefly review the development of Raman scattering of semiconductor superlattices. In part 3

we describe the Cerdirs’s theories

[2]

about the calculation of the frequency of longitudinal optical (LO) phonons and transverse optical (TO) phonons of ZnSe and ZnS layers which are under biaxial stress. With Eq.1

we can calculate the frequencies of LO phonons if the effective spring constants p and q are known. In part 3

it can be observed that the energy of ZnS LO phonon in ZnSe-ZnS SLS on CaF

2

is 23cm

-1

which is lower than that in bulk ZnS

and the peak is very sharp with dominant strength while the peak of ZnSe LO phonons is very weak in Raman spectra of ZnSe-ZnS SLS on CaF

2

(111)

shown in Fig.4. In Raman spectra of ZnSc-ZnS SLS on GaAs (100) shown in Fig.3

we found that energy of ZnSe LO phonons in SLS is 35cm

-1

which is larger than that in bulk ZnSe

and there is a peak with wave number of 110cm

-1

. We think that the 110cm

-1

peak results from Raman scattering of amorphous Se in the surface of ZnSe-ZnS SLS. In conclusion

the energy of LO phonon of a semiconductor material under biaxial compressive strain will shift towards the blue

while the energy of the LO phonons of a semiconductor material under biaxial expanded strain will shift towards the red. Our experiment spectra agree with the Cerdira’s theories in principle.