ZnSe films have been widely studied in recent years because of its potential applications as efficient blue luminescence and laser material. In this paper we present the growth and lasing characteristic of ZnSe films grown by organometallic vapor phase epitaxy (OMVPE).The dimethyl zinc (DMZn) and hydrogen selenide (H

2

Se) were used as zinc and selenium sources and palladium diffusion hydrogen as carrier gas. ZnSe heteroepitaxial growth was performed in a horizontal radiant -heated reactor under atmospheric pressure on GaAs (100) substrate. PL was measured at 10K under 365 nm line of a mercury arc lamp by the MM-12 monocbromator with S-1 photomultiplier.Stimulation and lasing were measured by a 44W grating monochromator with C31034 photomultiplier at 77K under 377nm line of a N

2

laser with power density of 3MW/cm

2

.