Tian Hua, Fan Xiwu, Xu Shaohong. HIGH-FIELD ELECTROLUMINESCENCE IN FORWARD-BIASED ZnSe: Er<sup>3+</sup> MIS DIODES[J]. Chinese Journal of Luminescence, 1988,9(4): 297-303
Tian Hua, Fan Xiwu, Xu Shaohong. HIGH-FIELD ELECTROLUMINESCENCE IN FORWARD-BIASED ZnSe: Er<sup>3+</sup> MIS DIODES[J]. Chinese Journal of Luminescence, 1988,9(4): 297-303DOI:
The luminescence of ZnS and ZnSe doped with rare-earth ions is an interested field
[1-6]
.The reason for this is that
on one hand
the interaction between rare-earth ions and crystal lattice can be understanded by studying the luminescence of rare-earth ions in ZnS and ZnSe crystals
on the other hand
ZnS and ZnSe doped with rare-earth ions are potentially effective materials for colour display.Using ion implantation technique
ZnS and ZnSe diodes have been fabricated and electroluminescence of rare-earth ions have been observed on reverse bias
[2
3]
. One problem is that the efficiency of these diodes is not so high.