By two ways the impurity Li was diffused into CaTe crystals. The anneal of sample a was made in a quartz tube at 350℃

under Te atmosphere for 320 hours. Li diffusion was made from Li

2

CO

3

solutions deposited on the polished wafer surface in a horizontal furnace

under a continuous flow of H

2

-N

2

mixture. The temperature was 350℃

and the diffusion time was one hour. Li diffusion of the samples b and c was similar to that of sample a but without the first stage. The temperature was 450℃

and diffusion time one hour and 0.5 hour respectively. The second way without prediffusing of Te is reported first time.In order to investigate the interaction of A

Li

° with electrons and excitons in CdTe:Li

the dynamic processes of various luminescence mechanism were analysed. The effect of excitation intensities of (e

A

Li

°) and (A

Li

°

X) emission were observed at UK. And two relationships

I

lum

-

I

exc

and

I

lum

-

I

exc

1.5

were obtained respectively. A bound exciton (A

Li

°

X) could be dissociated thermally into an electron and a hole leaving a neutral acceptor A

Li

°

(A

Li

°

X)→A

Li

°+

e

+

h

. By fitting the curve to the experimental data of the integral intensities in (A

Li

°

X) emissions

we got that the bound energy of exciton was about 4meV.The electron-phonon coupling for various

I

exc

in (e

A

Li

°) was analysed. When the trapped centres are the same

N

the mean number ofemitted phonons is a constant. And

N

is a measure of the radius of the trapped carrier wave function if the charge distribution of trapped carriers can be approximated by a Gaussion function. The constant a characterizing the localization of the carrier at a centre is about 160Å.