The factors affecting performance characteristics of GaAs/GaAlAs double heterostructure edge emitting LEDs(DH-ELED)are described in this paper.Among them

the effect of doping concentration and doping type in the active region on optical power and modulation capacity of DH-ELED is discussed with emphasis.Investigated results show that the ELEDs doped with Si or lightly doped with Ge have higher power and lower frequency response

These LEDs can only be used for the systems of low data rate and higher power.The devices heavily doped with Ge can lead to fast frequency response and lower power.Such a LED can be used for the systems of higher data rate(34.368Mb/s).We can achieve both high power and fast response by means of the reasonable option of doping level.