MBE生长的掺Be p-GaAs的光荧光谱

胡天斗; 梁基本; 庄蔚华; 孙殿照; 吴灵犀

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MBE生长的掺Be p-GaAs的光荧光谱

电致发光 | 更新时间：2020-08-11

- MBE生长的掺Be p-GaAs的光荧光谱
- LOW TEMPERATURE PHOTOLUMINESCENCE OF Be DOPED GaAs GROWN BY MBE
- 发光学报 1987年8卷第3期页码：236-244
- 作者机构：
  
  中国科学院半导体研究所
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 收稿日期：1986-10-07，
  
  纸质出版日期：1987-08-30
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胡天斗, 梁基本, 庄蔚华, 孙殿照, 吴灵犀. MBE生长的掺Be p-GaAs的光荧光谱[J]. 发光学报, 1987,8(3): 236-244

Hu Tiandou, Liang Jiben, Zhuang Weihua, Sun Dianzhao, Wu Lingxi. LOW TEMPERATURE PHOTOLUMINESCENCE OF Be DOPED GaAs GROWN BY MBE[J]. Chinese Journal of Luminescence, 1987,8(3): 236-244
胡天斗, 梁基本, 庄蔚华, 孙殿照, 吴灵犀. MBE生长的掺Be p-GaAs的光荧光谱[J]. 发光学报, 1987,8(3): 236-244 DOI：

Hu Tiandou, Liang Jiben, Zhuang Weihua, Sun Dianzhao, Wu Lingxi. LOW TEMPERATURE PHOTOLUMINESCENCE OF Be DOPED GaAs GROWN BY MBE[J]. Chinese Journal of Luminescence, 1987,8(3): 236-244 DOI：

摘要

本文报道利用国产分子束外延(MBE)设备和Be元素生长的p-GaAs的低温光荧光谱

观察到FE

(D°

(A°

X)等束缚激子发光

判断外延层有较好的质量。在1.503～1.515eV之间观察8条与缺陷有关的(d

x)发光线。仔细分析了与Be

Ge受主有关的(BA)和(DA)发光现象。

Abstract

In this paper

We studied the behaviors of the Be-doped p-GaAs grown by a home-made MBE system with low temperature photoluminescence.The free exciton emission and the bound excitons emission associated with neutral acceptor

ioned and neutral donors were observed at 4.2K temperature. In the lightly Be-doped GaAs eight bound exciton lines (d

x)associated with the Ga vacancy were observed between 1.503-1.515eV. It was belived they are related to our growth condition of samples: substracte temperature was about 600℃ and As

was taken as As source.

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