The semiconductor superlattice is a sort of new semiconductor materials developed lately.It has been used to make the laser devices

the field effect transistors and the optoelectronic devices. X-ray double-crystal diffraction is a powerful tool that can measure structure parameters of the super lattices

being nondestructive and having the advantage of high precision. In the paper

We applied X-ray double-crystal diffraction method to [(GaAs)

l

(Ga

1-λ

Al

x

As)

m

]

n

/GaAS(001) one-dimensional super lattices. On the ground of the step structure model and X-ray diffraction kinematics theory

we obtained a series of calculation methods for determining the superlattice parameters. Based on the appearance of the satellite peaks

existence of the superlattices can be confirmed. We can calculate the superlattices period

D

from the angular distance Ad between different satellite peaks. We can calculate the Al concentration x in the superlattice with relative intensity ratio of the satellite peaks. At last

we can obtain quantum well parameters

such as well width Lz

berrier region width

L

B

and the molecular layer numbers 1 and m.Other informations obtained from the X-ray double-crystal diffraction rocking curves are also discussed.