In this report the characteristics of GaAlAs/GaAs Burrus type DH LEDS for the active layer doped by Si or Ge are investigated. The GaAlAs/GaAs DH wafers used for fabrication of the LEDS were grown by LPE technique. The structure of a DH wafer consists of four layers. They are a n-Ga

1-

x

Al

x

As buffer layer (

x

=0.35)

a active layer doped by Si or Ge

a Ge doped p-Ga

1-

x

Al

x

As confined layer (

x

=0.35)

and a p-GaAs contact layer. The carrier concentration profile of the DH wafer was measured by the electrochemical

C-V

method. The device output power is about ≥2mW at 100mA.The experimental results are as follows:1. The output power of the GaAlAs/GaAs DH LEDS Si doped active layer are higher than that of Ge doped active layer.2. The cut-off frequence (

fc

) for the devices of Si doped active layer

fc

<

15MHz at 100mA

for the devices of Ge doped active layer

fc

>

15MHz.3. The emitting spectrum wavelength λ is≥8700Å and 8200Å~8500Å

for the Si doped and Ge doped devices

respectively.4. Using deep level measurement by DLTS and shot transient capacitance it was found that activation energy Δ

E

=0.29eV and 0.42eV for the Si doped and Ge doped devices respectively.5. The DLTS pattern of the devices for the Si or Ge doped does not show obvious difference.