A new kind of multi-layer structure has been used to prepare the SrS:Ce

3+

thin film ACEL devices. The different between this device and conventional ZnS device is that there is a thin layer of pure ZnS

as a barrier layer

sandwiched between the Y

2

O

3

dielectric layer and the SrS:Ce

3+

active layer. The SrS phosphor layer was deposited by electron beam evaporation at higher substrate temperature of 350℃.X-ray diffraction analysis indicates that a high degree of crystalline perfection was formed at this temperature. The saturated luminescence brightness observed for SrS:CeCl

3

TFEL devices was about 100cd/m

2

under 5kHz AC excitation.