Characteristic luminescence of rare earth(RE)ions have been demonstrated from RE doped Ⅲ-Ⅴ compound semiconductors

such as Yb

Er and Nd doped GaAs

InP and GaP.Because of the effective screen of suriounded 5S2 and 5P6 shells

the spectra of RE ions in Ⅲ-Ⅴ compound semiconductors exhibit narrow lines arising from intra 4f-shell spin-orbit levels transitions as in other solid state materials.Usually

the RE ion occupied cation sites of Ⅲ-Ⅴ semiconductors in different doping technologies.These RE-doped Ⅲ-Ⅴ semiconductors have exhibited promising applications for d-c pumped optoelectronic devices.This paper reviews recent research work on photoluminescence(PL)and electroluminescence(EL)chaiacteristics of rare earth doped Ⅲ-Ⅴcompound semiconductors.