Recently

much work on near band edge emission under high excitation density has been reported in ZnSe to obtain blue spontaneous and stimulated amission.But most of the researchs are concentrated on photoluminescence(PL).Saito et al.observed E and P bands in ZnSe in PL

which they attributed to exciton-electron(E

x

-e)and exciton-exciton(E

x

-E

x

)interaction

respectively.Baltramiejunas et al.found that the effective exciton temperature used in ZnSe in PL was 79-150K

higher than the lattice temperature used(77K).Catalano et al.and Colak et al.reported the stimulated emission in ZnSe excited by photon and electron beam respectively.In our earlier work attention was focused on the identification of free exciton emission in forward-biased ZnSe MIS diodes under low excitation density

and proved that the effective exciton temperature was close to the lattice temperature.As far as we are aware that there is no reports on free exciton emission in forward-biased ZnSe MIS diodes with high pulse current density.