闭管热氧化法生长GaAs自体氧化膜的AES和XPS分析

戴国瑞; 姜秀英; 钟战天; 沈光地; 邢益荣

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闭管热氧化法生长GaAs自体氧化膜的AES和XPS分析

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- 闭管热氧化法生长GaAs自体氧化膜的AES和XPS分析
- AES AND XPS ANALYSIS OF NATIVE OXIDE FILMS ON GaAs BY THERMAL GROWTH IN A CLOSED TUBE
- 发光学报 1986年7卷第4期页码：377-382
- 作者机构：
  
  1. 中国科学院半导体研究所
  2. 吉林大学电子科学系
- 作者简介：
- 基金信息：
- DOI：
  中图分类号：
- 收稿日期：1986-02-16，
  
  纸质出版日期：1986-11-30
- 稿件说明：
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戴国瑞, 姜秀英, 钟战天, 沈光地, 邢益荣. 闭管热氧化法生长GaAs自体氧化膜的AES和XPS分析[J]. 发光学报, 1986,7(4): 377-382

Dai Guorui, Jang Xiuying, Zhong Zhantian, Shen Guangdi, Xing Yirong. AES AND XPS ANALYSIS OF NATIVE OXIDE FILMS ON GaAs BY THERMAL GROWTH IN A CLOSED TUBE[J]. Chinese Journal of Luminescence, 1986,7(4): 377-382
戴国瑞, 姜秀英, 钟战天, 沈光地, 邢益荣. 闭管热氧化法生长GaAs自体氧化膜的AES和XPS分析[J]. 发光学报, 1986,7(4): 377-382 DOI：

Dai Guorui, Jang Xiuying, Zhong Zhantian, Shen Guangdi, Xing Yirong. AES AND XPS ANALYSIS OF NATIVE OXIDE FILMS ON GaAs BY THERMAL GROWTH IN A CLOSED TUBE[J]. Chinese Journal of Luminescence, 1986,7(4): 377-382 DOI：

摘要

本文首次利用AES和XPS分析了闭管热氧化法生长GaAs自体氧化膜及其界面组成

其主要成分是Ga

和元素As

少量的As

分布在氧化层的外侧

从而推断出As

是本反应的氧化剂。

Abstract

This paper describes the thermal oxidation of GaAs carried out in a closed tube. During the oxidation process

a GaAs wafer to be oxidized was placed near one end of the quartz tube at the temperature of 525℃ and high purity powder of As

was put in a platinum bcat near the other end of the tube at 460℃. A wafer of Te-doped n-type GaAs (100) with a carrier concentration of 5×10

-3

was used in the experiments. The chemical and electrical properties of the native oxide films were studied. The varactor diode was fabricated in standered planar process with the native oxide films mask against impurity.In the study

in-depth profiles of the native oxide films were measured by means of AES combined with sputter etching by argon ions. AES and XPS measurements were carried with a PHL Model 550 electron spectrometer.

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