P-Ga

0.47

In

0.53

As contact layer (Zn-doped) was grown by supercooling in YW-1 type furnace with a carbon-slider beat

under a Pd-purified hydrogen ambient. In order to grow Zn-doped In

x

Ga

1-x

As layers lattice matched to InP by LPE

using a constant arsenic concentration in the liquidus (X

As

1

=5.7at.%)

the influence of the composition of solution X

Ga

1

and X

Zn

1

on the lattice mismatch of Ga

x

In

1-x

As/InP heterojunction [Aa/a=(a

GaxIn1

-xAs-a

Inp

)/a

Inp

] have been investigated. The growth temperature Tg was kept at 632℃ in all cases. The lattice mismatch was measured by a doublecrystal x-ray diffraction method.The lattice mismatch as a function of growth solution composition X

Ga

1

and X

Za

1

have been shown

respectively.It is found that surface morphology is poor

if the lattice mismatch of epi-layer at the room temperature is more than 5×10

-4

;but the wafer with a smooth surface is obtained

if the lattice mismatch of epi-layer has a negative value

even though its value is as high as the order of magnitude of-10

-3

. Because the lattice mismatch at the growth temperature is more than that at the room temperature.