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1. 中国科学院长春物理研究所
2. 英国Durham大学应用物理和电子学系
收稿:1982-04-16,
纸质出版:1982-05-30
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范希武, J. Woods. ZnSe<sub>x</sub>S<sub>1-x</sub> MIS发光二极管的兰色和紫色电致发光[J]. 发光学报, 1982,3(2): 29-33
Fan Xi-wu(X. W. Fan), J. Woods. BLUE AND VIOLET ELECTROLUMINESCENCE IN ZnSe<sub>x</sub>S<sub>1-x</sub> MIS DIODES[J]. Chinese Journal of Luminescence, 1982,3(2): 29-33
在40—290K温度范围内
研究了用高纯ZnSe
0.8
S
0.2
和ZnSe
0.5
S
0.5
单晶制备的MIS发光二极管在正向电压激发下的电致发光光谱。在室温时
观察到二个强的发射谱带
对于ZnSe
0.8
S
0.2
晶体
谱带峰值分别为4460和4554Å
对于ZnSe
0.5
S
0.5
晶体
则分别为4128和4276Å。在低温40K时
观察到电致发光光谱的精细结构。研究了这些光谱的温度依赖。根据作者在ZnSe MIS发光二极管中提出的观点
[10]
讨论了ZnSe
x
S
1-x
混晶中二个室温谱带的起因。
The electroluminescence emission spectrum of forward-biased MIS diodes prepared on high-purity single-crystals ZnSe
0.8
S
0.2
and ZnSe
0.5
S
0.5
have been studied over the temperature range 40-290K.At room temperature the emission consisted of two intense bands.The ZnSe
0.8
S
0.2
MIS diode shows two bands in blue at 4460A and 4554A and the ZnSe
0.6
S
0.5
MIS diodes shows two bands in violet at 4128A and 4276A.At the lowest temperature some structure was observed.Temperature dependence of the electroluminescence emission spectra have been investigated.The origins of two emission bands at room temperature have been discussed in terms of the point of veiw suggested by the authors
[10]
in ZnSe MIS diodes.
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