The electroluminescence of C-ZnSe:Al has been investigated. The znSe crystal is grown at high growth rate. This new system produces self-activated emission
the peak wavelength is at 5900A and the threshold voltage is 0.8V. The luminance is 50fL at 2V and 4mA
and is 600fL at 3V and 60mA. The maximum external quantum efficiency is 10
-4
. The luminescence of this structure is produced by recombination of injection hole at the centre V
Zn
-Al. Simple LEDs and display devices have been fabricated.