摘要:The emission of ZnO in the visible light region has a long and complicated history. In previous studies, researchers have attributed the emissions in the visible light region to the existence of impurities or structural defects (such as oxygen vacancies, zinc vacancies, zinc interstitials, surface states). However, there are still certain differences. For quantum dots (QDs) with good crystallinity and high luminous efficiency, it is contradictory to attribute their emission mechanism in the visible light region to the defect model. This paper proposes a multiple bright singlet/triplet hybrid self-trapped exciton emission model for ZnO QDs, whose luminescence range covers from 400 nm to 700 nm. The Photoluminescence quantum yield (PLQY) of singlet exciton and triplet exciton emission are 45.56% and 22.44%, respectively. Thanks to their good transparency and bright triplet excitons, we have explored the X-ray detection imaging by ZnO QDs as scintillator. The lowest detection limit of the ZnO QD scintillator for X-ray is as low as 64.89 nGy/s, which is lower than the dose required for X-ray medical imaging. This work puts forward a new model for visible emission in ZnO QDs, demonstrating a new type of transparent scintillator and their potential application in X-ray imaging.
摘要:Memristors have potential in high-efficiency information processing and synaptic function simulation due to their high density, low power consumption and continuously adjustable resistance. Zinc oxide is an ideal choice for memristor with high performance due to its various preparation methods, exciton stability and biocompatibility. Herein, the recent research progress of ZnO-based memristive device is reviewed, including memristive behaviors and mechanism, the cognitive functions of synapse simulated by analog-type memristor as well as functionality and applications. We first review the switching-type and corresponding memristive mechanism, including electronic memristors and optoelectronic memristors. Then, the cognitive functions of synapse including synaptic plasticity and learning experience are introduced. Moreover, we exhibit the applications of ZnO-based memristive device in logic operation, pattern recognition and multimodal in-sensor computing. Finally, we summarize the advantages/challenges of ZnO-based memristor and prospect the future development.
摘要:X-ray detection has been extensively used in medical diagnosis, security inspection, and industrial non-destructive detection etc. In recent years, metal halide perovskite X-ray detectors have attracted much attention due to their advantages such as high sensitivity, low detection limit and low cost. Compared with polycrystalline perovskite films, single crystal perovskites exhibit much lower trap density, higher carrier mobility-lifetime product, better uniformity and stability due to absence of grain boundaries, which are conducive to boost the performance of X-ray detectors. In this review, we first introduce the basic principle and the key performance parameters of X-ray detection to clarify the advantages of single crystal perovskite for direct X-ray detectors. Then, we review the research progress of single crystal perovskite direct X-ray detection and imaging. Specifically, the influence of crystal quality, composition regulation and structure of device of the single crystal perovskite on X-ray detection performance are systematically analyzed. Finally, we discussed the technical challenges and potential solutions faced by single crystal perovskite X-ray detectors, and provided a brief outlook on the development trends in the field.
摘要:High-performance semiconductor X-ray detectors prefer outstanding characteristics including low detection of limit, low dark current, high sensitivity, fast response time, high radiation hardness and so on. Wide-bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), diamond, gallium oxide (Ga2O3), and zinc oxide (ZnO) exhibit exceptional properties, including a wide bandgap, high electron mobility, high breakdown field strength, high saturated carrier drift velocity, and large displacement energy. These characteristics enable them to demonstrate superior performance in X-ray detection, meeting the requirements for high-performance semiconductor X-ray detectors and making them highly promising candidates for such applications.As a result, they have emerged as promising candidates for advanced X-ray detectors.In this paper, the electrical properties, preparation technology and detection performance of SiC, GaN, diamond, Ga₂O₃, ZnO X-ray detectors are introduced, and the latest research is discussed. Meanwhile, future research directions and potential applications of wide-bandgap semiconductor X-ray detectors in medical imaging, industrial detection and space exploration conduct in-deep thinking.
摘要:Carbon dots(CDs) are nanomaterials with low toxicity, excellent optical properties, good stability, and outstanding biocompatibility. However, some medicines have poor water solubility and adverse reactions, which impact people’s life, so CDs synthesised on the basis of medicine as precursors have attracted strong interest due to the advantages of preserving the medicine’s pharmacophore, improving medicine’s solubility and biosafety, and inhibiting the toxic side effects of medicine at high concentrations. This review summarises the current status and application prospects of pharmaceutical CDs, and discusses the types of pharmaceutical CDs precursors, the properties of pharmaceutical CDs, advances in biomedical research, and future perspectives.
摘要:The afterglow imaging technology avoids the interference of biological tissue autofluorescence and has ultra-high imaging signal-to-noise ratio, showing great application prospects in the field of biomedical imaging. The generation and decomposition of high-energy dioxetane intermediates enable the storage and release of light energy. As a result, afterglow materials that can be oxidized by singlet oxygen to form dioxetane intermediates exhibit prolonged luminescence. The dioxetane intermediates-based afterglow luminescent materials have good biocompatibility and structural diversity, and can extend the afterglow emission range and enhance afterglow intensity through structural modification, achieving more accurate afterglow imaging. This review summarizes the luminescence mechanism and construction strategies of dioxetane-based afterglow materials, introduces the design strategies of multi-component and single-molecule afterglow materials, and discusses in detail the reported afterglow substrates and their luminescence mechanisms. Moreover, the design strategies of afterglow nanoprobes and their latest developments in disease diagnosis, biosensing, and imaging were discussed and classified. Finally, the challenges and future development prospects of this type of material in clinical translation were analyzed.
摘要:The performance of photodetectors is determined by various parameters, including light absorption efficiency, sensitivity, and accuracy, all of which are influenced by multiple photoelectric conversion effects such as the photovoltaic, photoconductive, pyroelectric, photothermal, and photogating effects. The photogating effect refers to the phenomenon in which some of the photogenerated charge carriers in the photosensitive material are trapped and enter trap states upon light exposure, subsequently affecting the charge carrier transport properties within the conductive channel of the photodetector. This paper reviews the photogating effect and its role in enhancing photodetector performance. It begins with an introduction to the basic principles of the photogating effect, followed by a discussion of its impact on photodetector performance, including gain, bandwidth, responsivity, response time, and transfer characteristics. The photogating effect primarily enhances the sensitivity, dynamic range, and signal-to-noise ratio of photodetectors to weak light signals by modulating the output electrical signal in response to incident light. In particular, this paper emphasizes the application of the photogating effect in low-dimensional materials-based photodetectors, such as nanowires, graphene, and other two-dimensional materials. Finally, the potential applications of the photogating effect in perovskite photodetectors are explored, and future research directions are proposed.
摘要:The next generation of high energy physics experiments and time-of-flight positron emission tomography imaging require scintillators with ultrafast decay ranging from nanoseconds (ns) to picoseconds (ps) to fulfill the need for higher precision of radiation detection. The Cs2ZnCl4 crystal stands out due to its remarkable advantages of an ultrafast decay without slow component, a low melting point, non-hygroscopic, as well as the proper emission band matching well with commercial photomultiplier tube. In recent years, Cs2ZnCl4 crystal has attracted worldwide research interests as a kind of ultrafast scintillator with core-valence luminescence (CVL). This review emphasis on the research history and progress of Cs2ZnCl4 crystals, including luminescence mechanism, physicochemical properties, crystal growth techniques and the scintillation properties. Particularly, emphasis is placed on the optical and scintillation properties of Cs2ZnCl4 crystal. The application potential of Cs2ZnCl4 crystals as a unique ultrafast scintillator is then concluded.
“NiTe2, a representative transition metal dichalcogenides, has been integrated with a tapered optical fiber to achieve mode-locking in an erbium-doped fiber laser and a thulium-doped fiber laser, which lays a foundation for the construction of ultrafast photonics system.”
GUO Yunning, HU Zhiwan, WU Xianzhang, ZHANG Qizheng, ZHOU Bo, TAO Lili
摘要:As a representative transition metal dichalcogenides (TMD), NiTe2 has an ultra-fast optical response, high carrier mobility, and excellent environmental stability. It has a broad application prospect in the fields of energy, biomedicine, optoelectronic devices, and so on. At present, there have been scant reports on the application of NiTe2 in the field of ultrafast photonics. In this work, NiTe2 was synthesized by chemical vapor deposition (CVD) and integrated with a tapered optical fiber to achieve mode-locking in an erbium-doped fiber laser (EDFL) and a thulium-doped fiber laser (TDFL). The mode-locked EDFL exhibited a pulse width of 678 fs and an output power of 3.92 mW. The pulse width of mode-locked TDFL was estimated to have a pulse width of 694 fs with an output power of 21.64 mW. These results demonstrate that NiTe2 is an effective saturable absorber material with potential applications in the field of ultrafast optics.
关键词:NiTe2;Transition metal dichalcogenides;Saturable absorber;Mode-locked fiber laser
摘要:In recent years, with the breakthrough advancements in micro-nano fabrication technology, artificial micro-nano structures have become a global research hotspot due to their unique electromagnetic response characteristics and precise control capabilities. These novel functional materials have demonstrated significant application potential in various fields such as optical field manipulation, photoelectric detection, biosensing, and energy conversion, yielding significant research progress. This article systematically reviews the latest research progress in the field of artificial micro-nano structure enhanced photoluminescence. Firstly, it briefly outlines the theory and applications of surface plasmon resonance, emphasizing the characteristic parameters and regulation mechanisms of photoluminescence. Subsequently, representative applications of artificial micro-nano structures for enhancing photoluminescence and improving optoelectronic device performance are introduced in detail, encompassing various configurations such as metal nanoparticles, plasmonic thin films, photonic crystals/resonant cavities, micro-nano gratings/arrays, and metasurfaces. Finally, the current problems faced by artificial micro-nano structures and their future development directions are summarized and prospected.
关键词:artificial micro-nano structures;photoluminescence enhancement;light field manipulation;spontaneous emission rate;fluorescence lifetime
摘要:The development of flexible OLEDs relies on high-performance flexible substrates. Thermoplastic polyurethane (TPU), a polymer material with alternating soft and hard segments in its molecular chains, combines flexibility with high strength, making it a promising candidate for flexible OLED substrates. However, commercial TPU surfaces often exhibit microscopic irregularities, such as waviness or roughness, which adversely affect the fabrication of high-precision flexible OLEDs, potentially leading to reduced optical and electrical performance. To address this issue, this study employs solution processing to deposit a poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT∶PSS) coating on the TPU surface to improve surface quality.Results show that the PEDOT∶PSS coating significantly reduced the surface roughness of TPU from 7.05 nm to 2.19 nm, enhan cing the uniformity of subsequent functional layers (e.g., emitting layers and electrodes). Using the modified TPU substrate, top-emitting and bottom-emitting flexible OLEDs were successfully fabricated, achieving maximum external quantum efficiencies of 16.0% and 15.2%, respectively, while demonstrating excellent flexibility. This study provides new insights and theoretical support for the application of TPU in flexible OLEDs and other flexible electronic devices, offering significant potential for future advancements.
摘要:Benzoyl chloride and spiro-9,9′-xanthene were used as starting materials, and anhydrous AlCl3 was employed as a catalyst. Then, the compound 2′-(benzoyl)-spiro-9,9′-xanthene (SFXBz) was synthesized facilely by Friedel-Crafts reaction. The crystal structure of SFXBz revealed that the three-dimensional spatial structure of spirocyclic carbonyl compound could suppress the intermolecular interactions effectively. It exhibited a high thermal decomposition temperature (Td) of 314 ℃, which was significantly higher than that of spiro[fluorene-9,9'-xanthene (SFX, Td, 258 ℃) and phenyl sulfone-functionalized SFX (PSSFX, 2'-(phenylsulfonyl)spiro[fluorene-9,9'-xanthene], Td: 222 ℃), indicating that the introduction of a rigid benzoyl moiety could improve the thermal stability of SFX effectively. The differential scanning calorimetry (DSC) curve of SFXBz showed that there was no phase transition when the temperature increased from 40 ℃ to 220 ℃ with a high melting point of 202 ℃. Both of the thermogravimetric analysis (TGA) and DSC results of SFXBz indicated that the compound had high thermal stability and stable morphology. The density functional theory (DFT) calculations showed that the highest molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of SFXBz were separated completely, with energy levels of -5.82 eV and -1.58 eV, respectively. The spatially separated HOMO and LUMO orbitals of SFXBz indicated the compound owned bipolar characteristics. The HOMO and LUMO energy levels of SFXBz were further measured by cyclic voltammetry, the values of which were -6.22 eV and -1.97 eV, respectively. The deep HOMO energy level of SFXBz was favorable for blocking hole injection and transportion. The UV-absorption and photoluminescence spectrum of the compound showed that the main absorption peaks were at 229 nm, 273 nm, 299 nm, 309 nm, and 348 nm, respectively, and its maximum fluorescence emission peak was around 374 nm. The triplet energy level (2.55 eV) of the compound was obtained from the low-temperature phosphorescence spectroscopy, which was higher than those of the classic red and green guest materials (2,4-pentanedionato)bis[2-(2-quinolinyl)phenyl]iridium(Ⅲ) (Ir(pq)2acac, T1, 2.10) and fac-Tris[2-phenylpyridinato-C2,N]iridium(Ⅲ) (Ir(PPy)3, T1, 2.40 eV), respectively. This indicated that the compound could be used as a host material for red and green phosphorescent devices.
摘要:Photo-thermal synergistic catalytic is an excellent application mean to solve the key scientific problems of high energy consumption and high activation energy in the traditional thermocatalytic process. The CeO2/Pd/Carbon photothermal catalysts (denoted as PCC) were synthesized by liquid-phase reduction, impregnation and amino acid induction methods using carbon nanospheres as the heat source, Pd nanoparticles as the active site and the semiconductor material CeO2 as the photocatalyst and oxygen activation site, and the photothermal synergistic catalytic reaction system was constructed. The catalytic reaction system has full-spectrum absorption and excellent photothermal conversion ability, which could convert light energy into thermal energy to achieve in situ heating of the active site and increase the active site temperature and reaction potential energy; meanwhile, it has superior charge-hole separation efficiency, which could enhance the activation of oxygen molecules, reduce the reaction activation energy and promote the reaction. Under the light intensity of 400 mW·cm-2, its complete conversion of CO can be achieved at furnace temperature of 72 ℃. The work could provide some reference and ideas for the design of photothermal catalysts for different systems.
摘要:The solar-blind ultraviolet (UV) band has unique features, such as low background noise, strong local security, and excellent resistance to interference. These characteristics make it highly useful in specialized communication applications. However, silicon-based detectors face challenges, including low detection efficiency and poor responsivity to solar-blind UV light. To overcome these limitations, spectral conversion technology has been introduced. This approach converts high-energy UV photons into visible or near-infrared light, making it compatible with commercial silicon detectors. It also offers benefits like low cost, high stability, and mature manufacturing processes. This paper reviews recent progress in solar-blind UV detection based on spectral conversion. First, it explores the applications and classifications of detectors that use spectral conversion. Then, it highlights advancements in high-efficiency detection methods for solar-blind UV imaging and communication. Finally, it discusses the potential future developments of this technology, emphasizing its growing importance in the field.
关键词:Solar-blind ultraviolet;spectral conversion;photodetector;luminescent material
摘要:This study employed a thulium-doped fluorotellurite glass fiber as the gain medium and utilized dual-wavelength lasers at 1 400 nm and 1 570 nm as the pump sources to establish a theoretical model of a 2.3 μm fiber laser. Through numerical simulations, the effects of the gain fiber length, fiber loss, and pump power on the performance parameters of the 2.3 μm laser were systematically investigated. The simulation results showed that when the length of the thulium-doped fluorotellurite glass fiber was 2.3 m, the pump power at 1 400 nm was 30 W, and the pump power at 1 570 nm was 2.4 W, the output power of the 2.3 μm laser reached 14.7 W, with a corresponding conversion efficiency of 45.37%. This research provides theoretical guidance for the development of high-power 2.3 μm thulium-doped fiber lasers.