摘要:In this study, to tackle the challenge of p-type doping of pure ZnO semiconductor, we proposed utilization of co-substitution strategies involving anionic (S2-) and cationic (Mg2+) ions, leveraging their synergistic effects to modify the electronic band structure of ZnO alloy to facilitate the activation of nitrogen acceptors. By applying pulsed laser deposition technique, we successfully fabricated N-doped p-type transparent conductive MgZnOS thin films. The crystal structures, optoelectronic properties, and chemical compositions of the films were systematically analyzed using X-ray diffraction, transmittance spectroscopy, Hall-effect measurements, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. The experimental results indicate that the prepared MgZnOS∶N films possess a hexagonal wurtzite structure with preferential c-axis orientation. The deposited films exhibit a transmittance exceeding 80% in the ultraviolet-visible-near-infrared spectral region, and Mg doping significantly broadens the optical bandgap of the ZnO alloy films. The Mg and S contents in the prepared p-type conductive films are 9% and 25%, respectively, and the films have a hole concentration of 2.02×1019 cm-3, a Hall mobility of 0.25 cm2/(V·s), and a resistivity of 1.24 Ω·cm. Based on the successful fabrication of p-type MgZnOS∶N film, we designed and constructed a novel p-MgZnOS∶N/n-ZnO quasi-homogeneous p-n junction ultraviolet photodetector. The fabricated device exhibits typical diode rectification characteristics (with a turn-on voltage of approximately 1.21 V) and demonstrates stable ultraviolet photoresponse at 0 V bias, with a peak responsivity of 2.26 mA/W (at wavelength of 350 nm). The self-driven photoresponse is attributed to the effective separation and transport of photogenerated carriers by the built-in electric field of the p-n junction. This study offers valuable insights into the p-type doping of ZnO and holds substantial significance for the advancement of high-performance all-ZnO-based optoelectronic devices.
摘要:In recent decades, one-dimensional (1D) zinc oxide (ZnO) nanomaterials have attracted widespread attention and interest due to their unique optical and electrical properties, demonstrating extraordinary performance in various optoelectronic fields such as light emission, detection, sensing, and catalysis. 1D core-shell nanostructures not only enable surface modification and the integration of functional materials, but also possess optical characteristics for radial localization and axial transport, as well as electrical characteristics for directional carrier transport. This results in a rich array of physical and chemical properties, playing an important role in the research and development of performance optimization and functional expansion for optoelectronic devices. This article introduces the controllable preparation of 1D ZnO nanowire arrays and the precise fabrication of core-shell structures, the research progress on the photoluminescence and electroluminescence characteristics, as well as the current status of functional applications in optoelectronic detectors, solar cells, photoelectrochemical catalysis, and optoelectronic sensing. Finally, the article summarizes and prospects the development potential and challenges faced by 1D ZnO core-shell nanostructure devices.
摘要:Wide bandgap semiconductors have great potential for the development of compact solar-blind ultraviolet detectors without filters. This article summarizes the research progress of deep ultraviolet photodetectors using wide bandgap oxide semiconductors including MgZnO and amorphous Ga2O3 (a-Ga2O3) thin films. It has been found that the photoresponse performance of a-Ga2O3 thin film is comparable or even better than that of crystalline thin films. Numerous results demonstrate that oxygen vacancy (VO) defects play a crucial role in device performance. Based on the effective modulation of VO defects, high performance solar-blind ultraviolet photodetectors can be successfully achieved. In addition, the persistent photoconductivity effect, which is usually accompanied by the presence of VO defects in oxide materials, provides a new perspective for the development of optoelectronic synaptic devices in deep ultraviolet range. Finally, a brief discussion is provided concerning the above research progress as well as some unsolved issues. These advancements are expected to promote the industrial application of wide bandgap oxide semiconductor materials, especially a-Ga2O3, in deep ultraviolet detection in the future.
“In the realm of energy harvesting microsystems, rectifying circuits are indispensable for converting AC to DC. This study introduces its research progress in optimizing diode performance by modulating oxygen vacancy concentration in InGaZnO films. Expert researchers effectively controlled the diode's electrical performance by adjusting oxygen vacancy, providing a methodology for optimizing rectifying diodes.”
JIA Bin, TONG Xiaowen, HAN Zikang, QIN Ming, WANG Lifeng, HUANG Xiaodong
摘要:Rectifying circuit, as a crucial component for converting alternating current into direct current, plays a pivotal role in energy harvesting microsystems. Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes. Conversely, metal oxide diodes, with their simple fabrication techniques, offer advantages for system integration. The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device, so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration. This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process. Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm-², with a rectification ratio of 6.94 × 10⁴, efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude. These results demonstrate its potential in energy conversion and management. By adjusting the oxygen vacancy, a methodology is provided for optimizing the performance of rectifying diodes.
摘要:The exciton binding energy of ZnO up to 60 meV enables its excitons to exist stably at room temperature or even higher. This characteristic allows exciton-polariton devices based on ZnO strong coupled microcavities to overcome the low-temperature experimental limitations of traditional semiconductors, making ZnO a favored material for exciton-polariton research in the past decade. This paper introduces several semiconductor microcavity structures of ZnO and focuses on recent reports about phenomena related to ZnO strong coupled microcavities and exciton-polaritons, including polariton lasing, parametric scattering, and quantum states control. The future research direction is also prospected.
摘要:Metal oxide thin film transistors (MOTFTs) have great potential for application in large-sized organic light-emitting display driver backplanes due to their high carrier mobility and good electrical stability. In addition, the fabrication processes of MOTFTs are compatible with amorphous silicon thin film transistors’, resulting in their lower manufacturing costs and strong market advantages. However, the trade-off between mobility and stability which are the key indicators for measuring MOTFTs limits their high-end applications. Therefore, developing MOTFTs that combine high mobility with high stability has become a research hotspot and industry competition focus. Numerous studies indicate that rare earth (RE) doped oxide semiconductor materials is promising for achieving this goal. This paper focuses on reviewing the design of RE doped oxide materials that achieve both high mobility and high stability, as well as the characteristic indicators that MOTFTs have reached, and discusses the changes and development potential of RE doped MOTFTs (RE-MOTFTs).
关键词:metal oxide thin film transistors;rare earth;mobility;stability
“In the field of perovskite quantum dot light-emitting diodes, researchers are actively exploring optimization strategies to overcome challenges in long-term stability and operational efficiency. Expert xx verified the xx conjecture, which lays a foundation for the construction of high-performance and stable Pe-QLEDs.”
摘要:Perovskite quantum dot light-emitting diodes (Pe-QLEDs) have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum (FWHM) and high photoluminescence quantum yield (PLQY). Despite significant advancements in their performance, challenges such as defects and ion migration still hinder their long-term stability and operational efficiency. To address these issues, various optimization strategies, including ligand engineering, interface passivation, and self-assembly strategy, are being actively researched. This review focuses on the synthesis methods, challenges and optimization of perovskite quantum dots, which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.
摘要:An object (or molecule) is said to be chiral if its mirror image cannot be fully coincident by rotation or translation. Chirality is a universal basic feature in nature. Chiral materials possess unique optical properties such as circular dichroism(CD) and circularly polarized luminescence(CPL), offering promising applications in various fields, including photocatalysis, biosensing, and optical devices. Photon upconversion(UC) refers to the process of absorbing multiple low-energy photons and emitting a single high-energy photon. Upconversion nanoparticles(UCNPs) achieve photon upconversion through energy level transitions among rare-earth ions. Chiral materials incorporating photon upconversion exhibit greater application potential in areas such as photodynamic therapy and bioimaging, owing to the advantage of low-energy near-infrared excitation. This paper introduces the chiral construction methods of upconversion nanoparticles, summarizes their chiral applications, and discusses prospects for future development.
“In the field of molecular fluorescence, researchers have synthesized a perylene diimide derivative, PDI-COOH, which exhibits significantly enhanced fluorescence when combined with calcium ions in THF/H2O solution. By altering hydration levels and concentrations, the assembly and fluorescence behavior of PDI-COOH/Ca2+ were studied, leading to the proposal of a fluorescence emission mechanism. This work highlights a novel strategy for aggregated state fluorescence enhancement and underscores the crucial role of water in molecular fluorescence emission and assembly.”
GU Dandan, ZHAO Haoru, JIANG Xiaoze, QI Haohan, LIAO Zuogui, CHEN Jia, SUN Bin
摘要:Bay-site carboxyl functionalized perylene diimide derivative 1,7-COOH-PDI-C12(PDI-COOH) was synthesized and distinct enhanced fluorescence was observed through combining with calcium ion(Ca2+) in THF/H2O solution. The assembly and fluorescence behavior of PDI-COOH/Ca2+ were studied in detail by changing hydration state with different concentrations. Based on the differences in assembly morphology and stoichiometric ratios of PDI-COOH/Ca2+, we proposed the fluorescence emission mechanism of PDI-COOH/Ca2+ in THF/H2O and THF, respectively. This work reveals a novel strategy of aggregated state fluorescence enhancement and reminds us of the important role of water in molecular fluorescence emission and assembly.
关键词:carboxyl functionalized;fluorescence behavior;perylene diimide;photoinduced electron transfer effect;calcium ion
摘要:Blue-cyan phosphors play an important role in the development of full-spectrum phosphor-conversion white LED (pc-WLED). Herein, a Bi3+ doped garnet structure solid solution material GdSr2ScMgGe3O12 was prepared by the high-temperature solid-state method. The structure, composition and photoluminescence (PL) properties of the materials were analyzed thoroughly through the XRD structure refinement, elemental analysis and PL spectra. GdSr2ScMgGe3O12∶Bi3+ can be effectively excited in the ultraviolet-violet range, exhibiting near-UV emission (λem = 340 nm) and broadband blue-cyan emission (λem = 480 nm), respectively. Moreover, the transition mechanism of Bi3+ ions were studied. Bi3+ ions occupied both [Sr/GdO8] and [Sc/MgO6] sites in the host based on the structure and PL characteristic. The blue-cyan emission behavior of Bi3+ ions in [Sc/MgO6] sites was analyzed, and the PL efficiency and thermal stability of the phosphors were evaluated. Finally, a full-spectrum pc-LED was manufactured by using the optimal blue-cyan phosphor with UV LED chip, and the device shows a low correlation color temperature (CCT = 3 761 K) and high color rendering index (CRI = 92.3).
摘要:A series of Eu3+, Dy3+ and/or Na+ doped Sr3AlO4F phosphors were synthesized by a solid state reaction. The properties of Sr3AlO4F∶Eu3+,Dy3+,Na+ phosphors were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, photoluminescence spectra, and other tests. The luminous intensity of the sample was the highest at the concentrations(mole fraction) of Eu3+, Dy3+ and Na+ at 11%, 5% and 4%, respectively. The concentration quenching mechanism of single-doped Eu3+ and Dy3+ is quadrupole-quadrupole interaction and dipole-dipole interaction in Sr3AlO4F phosphor. The experiment of Eu3+ and Dy3+ co-doping suggests possible energy transfer from Dy3+ to Eu3+. Furthermore, the addition of Na+ as a charge compensator improved the luminescence performance of Sr3AlO4F was increased by nearly 4 times. The thermal stability of the Sr3AlO4F∶Eu3+,Dy3+ sample was examined, revealing that the luminescence intensity of Sr3AlO4F∶Eu3+,Dy3+ at 150 ℃ remained at 72.71% of that at 30 ℃. The new type of red phosphor Sr3AlO4F∶Eu3+,Dy3+,Na+ is beneficial for improving the color rendering index of white light emitting diodes.
关键词:high-temperature solid-phase method;energy transfer;photoluminescence;Sr3AlO4F∶Eu3+,Dy3+,Na+;Red fluorescent material
摘要:Photo-assisted Li-O2 batteries (LOBs) have remained a prominent and growing field over the past several years. However, the presence of slow oxygen reduction reaction (ORR) and oxygen evolution reaction (OER), large charging and discharging overpotentials, and unstable cycle life lead to low energy efficiency, thus limiting their commercial application. The rational design and synthesis of photocathode materials are effective ways to solve the above existing problems of photo-assisted LOB systems. Herein, the recent advances in the design and preparation of photocathode materials for photo-assisted LOBs were summarized in this review. First, we summarize the basic principles and comprehension of the reaction mechanism for photo-assisted LOBs. The second part introduces the latest research progress on photocathode materials. The third section describes the relationship between the structure-properties and electrochemistry of different photocathodes. In addition, attempts to construct efficient photocathode materials for photo-assisted LOBs through vacancy engineering, localized surface plasmon resonance (LSPR), and heterojunction engineering are mainly discussed. Finally, a discussion of attempts to construct efficient photocathode materials using other approaches is also presented. This work will motivate the preparation of stable and efficient photocathode materials for photo-assisted LOBs and aims to promote the commercial application of rechargeable photo-assisted LOBs energy storage.
摘要:The buried interface defects of inverted perovskite solar cells are a significant factor that can suppress the performance and lifetime of these solar cell devices. These defects can constrain the efficiency and stability, making it crucial to solve them for improved solar cell performance. Using organic small molecules as passivation materials has been shown to be an effective strategy to mitigate these interface defects, thereby reducing the non-radiative recombination of charge carriers. In this study, we have successfully integrated a kind of passivation material with a self-assembled hole transporting layer, enabling a one-step passivation of the buried interface with a two-dimensional perovskite material. After the deposition of the perovskite film, the number of excess lead iodide particles at the buried bottom interface was significantly reduced, and the presence of two-dimensional perovskite was detected, from which it can be hypothesized that the passivation material at the bottom reacted with the lead iodide to synthesize it. This innovative approach significantly improves the efficiency of solar cells, especially the Voc and device reproducibility due to the reduction of buried interface defects. Our results demonstrate that through the passivation of the buried interface, we were able to achieve an impressive efficiency of 21.42% by using blade coating. Furthermore, to validate the scalability and practicality of our method, we fabricated perovskite solar modules with an aperture area of 21.5 cm2. These modules achieved an efficiency of 21.02% and remained stable for almost 1 000 h at 85 ℃ and 85% humidity after proper encapsulation. The simplicity and efficiency of this process confirm the potential for large-scale applications in perovskite solar cell technology.
关键词:perovskite solar cell;buried interface;passivation;self-assembled monolayer;high efficiency
摘要:In this paper, a passive Q-switched laser based on Sb2O3 saturable absorber Er3+-doped laser using a 978 nm pump was proposed. The Sb2O3 was successfully transferred onto an Al2O3 substrate by the chemical reaction assisted vertical micro sublimation method(CVMS), and its properties, such as morphology and structure were characterized. The Er3+-doped passive Q-switched laser based on Sb2O3-SA was achieved by using a 978 nm pump, with the maximum single-pulse energy and the maximum peak power of 6.84 μJ and 1.12 W, respectively. With the increase of the pump power, the pulse width decreased from 19.64 μs to 6.09 μs, and the repetition frequency increased from 19.10 kHz to 62.13 kHz. The center of the output laser wavelength is located at 2 793 nm and the FWHM corresponding to the wavelength at 2 793 nm is 9.10 nm. The experimental results showed that Er3+-doped passive Q-switched lasers based on Sb2O3 saturable absorber provide a new reference to realize lower-cost, more stable ~3 μm mid-infrared lasers with simpler resonant cavity using a novel saturable absorber.
摘要:Photolithography is a reliable method for fabricating pixelated color conversion films in Micro-LEDs, but it faces challenges related to the compatibility of quantum dots (QDs) with photoresists. This paper develops a quantum dot-compatible photoresist by modifying acrylic resin with N-phenylmaleimide (NPMI) side chains. The CO bonds on the side chain groups form coordination bonds with quantum dots, passivating surface defects and improving the dispersion of quantum dots. This enhances the photoluminescence quantum yield (PLQY) of the photoresist solution, reaching 76.1% for red and 43.4% for green. Even after fabricating the color conversion films, the passivation effect persists, with PLQY values of 66.4% for green and 36.4% for red. The minimum pixel size achieved was a rectangular array of 10 μm × 10 μm. The resin side chain modification approach in this study provides guidance for developing QD-compatible photoresists and offers a simple and viable solution for the commercialization of full-color Micro-LED applications.
摘要:Copper-doped carbon dots (Cu-CDs) were fabricated through bottom-up hydrothermal method based on L-tryptophan, folic acid and copper chloride. Characterization of the carbon dots’ structure, HPAM recognition mechanism, and degradation performance were conducted using transmission electron microscopy, X-ray photoelectron spectroscopy, and steady-state transient fluorescence spectroscopy. As a result, Cu-CDs exhibited a high quantum yield of 60%, proving capable of anti-ion interference and specific recognition of partially hydrolyzed polyacrylamide (HPAM) in water. The fluorescence intensity ratio (I360/I450) of Cu-CDs displayed a strong linear correlation with HPAM concentration from 1 mg/L to 1 000 mg/L, with a remarkable detection limit of 0.27 mg/L. The degradation of HPAM achieved a rate of 78% within 2 hours under 365 nm ultraviolet irradiation, showcasing the efficacy of Cu-CDs. Even after 5 cycles, Cu-CDs retained their high degradation efficiency (67%), underscoring their exceptional photocatalytic stability. This study presents a practical approach for the precise detection and degradation of HPAM, offering promise for the effective treatment of pollutants.