最新刊期
卷 34 ， 期 11 ， 2013
- 摘要：A photoresponsive sensor that UV light controlled depletion zone thickness was report. This p-n junction depletion zone lies between the n-type ZnS and p-type polyaniline. The photoresponsive sensors were constructed by combining polyaniline/ZnS p-n heterojunction and ZnO nanorods. Different from the traditional photosensitive nanomaterials whose conductivity increases with UV illumination intensity, the conductivity of the photoresponsive sensor studied in this articles decreased when the UV light was turned on.关键词：UV light controllable;metal sulfide;polyaniline;p-n junction;photoresponsive sensor106|55|1更新时间：2020-08-12
- 摘要：PC/YAG:Ce fluorescent resin pieces were prepared by using the methods of compound-melting and high-temperature molding. The transmittance of the YAG:Ce/PC fluorescent resin in 500~800 nm reaches approximately 65% (0.87 mm thick, double sides polished). The fluorescent resin was characterized by XRD, SEM and PL. The X-ray diffraction (XRD) patterns indicate that the fluorescent resin was pure Y3Al5O12 phase. The scanning electron microscopy (SEM) images show that YAG phosphor is distributed evenly in the fluorescent resin. The excitation spectra had a weak peak at 342 nm and a strong band at 448 nm. The broad emission peaks at about 532 nm can be attributed to 5d→4f transition of Ce3+ ions. The higher the content of fluorescent powder is, the stronger the luminesence intensity of the samples will be. All results show that YAG:Ce/PC fluorescent resin may be a promising fluorescent material for white LEDs.关键词：white LED;fluorescent resin;YAG：Ce;polycarbonate109|92|3更新时间：2020-08-12
- 摘要：High-quality tetrapod-shaped Al-doped ZnO (T-AZO) nanostructures were synthesized via thermal evaporation of mixed Zn and Al powders. The effects of Al dopant concentration on the morphology, microstructure, optical and field emission (FE) properties of T-AZO were investigated using scanning electronic microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL) spectra and FE measurement. It is found that the incorporation of Al increases the aspect ratio of the tetrapods, leads to blue-shift in the UV region, and significantly improves the FE performances. The results also show that tetrapod cathodes with 3% Al mole fraction have the best FE properties, with a turn-on field of 1.33 V/μm, and a field enhancement factor as high as 8 420. The superior FE properties are mainly attributed to the high aspect ratio of the legs in the unique tetrapod-liked structures, and more electrons being induced in the conduction band by Al dopand.关键词：ZnO tetrapods;Al doping;thermal evaporation;photoluminescence;field emission135|78|5更新时间：2020-08-12
- 摘要：The high background electron concentration in ZnO films can compensate the forming of acceptor, which causes difficulties for p-type doping. Understanding the source of the high background electron concentration is helpful to realize high-efficient p-type doping. In this paper, a series of ZnO thin films were grown on a-plane sapphire substrates under different vacuum by molecular beam epitaxy. The samples grown under low vacuum show high carrier concentration of about 1019 cm-3, however, the electron concentration of the samples grown under high vacuum is significantly lower than the samples grown under high vacuum by three orders of magnitude. For the samples grown under low vacuum, the electron density did almost not change after annealing with various post-treatment, indicating the intrinsic defects, such as oxygen vacancy, are not the main source of electrons in ZnO films. The high background electron concentration should originated from the impurities unintentionally introduced during the growth. The samples grown under low vacuum showed a strong photoluminescence peak at 3.366 eV at 85 K, which is related to shallow-donor-bound exciton. For the samples grown under high vacuum, this emission was weakened markedly. Therefore, defects related to hydrogen were assigned to the main source of the high electron concentrations in the case of low vacuum growth.关键词：ZnO;high electron concentration;chamber vacuum;hydrogen114|63|0更新时间：2020-08-12
- 摘要：Gd3PO7:Eu3+ and La3PO7:Eu3+ samples were prepared by conventional solid-state reaction route. X-ray diffraction and scanning of electron microscopy were employed to characterize the samples. The excitation and emission spectra from VUV to visible wavelength were obtained at the room temperature. It is found that the host absorption band of Gd3PO7:Eu3+ is weaker under VUV excitation, but the red luminescence intensity of Gd3PO7:Eu3+ is stronger than La3PO7:Eu3+ under UV excitation. There is an efficient energy-transfer process from Gd3+ to Eu3+. The two samples major emission peaks from 5D0 to 7F2 transition of Eu3+ locate at 618 nm. The results of emission spectra indicate that the local symmetry of the Eu3+ ions is lower and the color purity is better in these oxyphosphates samples.关键词：rare earth;oxygen phosphate;colorimetric purity90|50|3更新时间：2020-08-12
- 摘要：Ba9(Y2-xScx)(SiO4)6:Ce3+,Mn2+ (x=0,0.5,1.0,1.5,2.0) samples are prepared by solid-state reaction. For this phosphor, with the gradually increased Sc3+ contents from x=0 to x=2, the blue emission intensity of Ce3+ for x=2 sample increases to 1.7 times and the red emission intensity of Mn2+ increases to 1.9 times. By monitoring the photoluminescence and diffuse reflection spectra, it reveals that the increases of the Ce3+ and Mn2+ emissions are directly related with the enhancement of the absorbance of Ce3+ and the energy transfer efficiency from Ce3+ to Mn2+. The x=2 sample, Ba9Sc2(SiO4)6:Ce3+,Mn2+, was chosen for further thermal properties investigation. With temperature increasing, the red emission of Mn2+ increases originally and then decreases. As the temperature reaches to 488 K, the intensity is as high as 84% of that at room temperature. The enhanced red luminescence and superior temperature stability indicate BSS:Ce3+,Mn2+ could be used for UV-based white LEDs as the red light source.关键词：Ba9(Y2-xScx)(SiO4)6：Ce3+;Mn2+;luminescence;thermal stability;white LED193|43|1更新时间：2020-08-12
- 摘要：The ZnAl2O4:Tb3+ phosphor powders were synthesized by sol-gel method with different doping concentrations of Tb3+ and secondary calcination temperatures. Then they were characterized by X-ray diffraction (XRD) and photoluminescence (PL). The XRD patterns show that the pure spinel phase of high crystallinity can be obtained when the mole fraction of Tb3+ is less than 9% and the secondary calcination temperature exceeds 600℃. Under the excitation of ultraviolet light, the emission spectra of ZnAl2O4:Tb3+ phosphor consists of four peaks locating at 488 nm (5D4→7F6), 542 nm (5D4→7F5), 587 nm (5D4→7F4), and 621.5 nm (5D4→7F3). The influence of Tb3+ concentration and secondary calcination temperature on the luminescence intensity was significant. The photoluminescence spectra intensity of ZnAl2O4:Tb3+ is the strongest when the mole fraction of Tb3+ is 5% and the secondary calcination temperature is 900℃. When the mole fraction of Tb3+ and the secondary calcination temperature increase excessively, concentration quenching and temperature quenching appear, respectively.关键词：ZnAl2O4;Tb3+;phosphor;structure;photoluminescence110|64|1更新时间：2020-08-12
- 摘要：Er3+ doped Ln2Sn2O7 (Ln=La,Gd,Y) nanocrystals were fabricated by sol-gel method. The crystal structure and morphologies were investigated by XRD and SEM, and the up-conversion spectroscopic properties of the samples were also investigated. Under the excitation of a 980 nm diode laser, the samples mainly emit bright green light. The strong green and red up-conversion emissions which centered at 549, 528, and 672 nm, respectively. They were assigned to the transitions of 2H11/2→4I15/2, 4S3/2→4I15/2 and 4F9/2→4I15/2 energy levels of Er3+ ions. Taking La2Sn2O7:Er3+ nanocrystal for example, the most efficient up-conversion emission can be obtained when the annealing temperature is 1 150℃ and the mole fraction of Er3+ is 7%. The dependence of the intensity of up-conversion emissions upon the excitation power of the diode laser suggests that two-photon absorption processes are involved in the green and red up-conversion luminescence. The excited state absorption and energy transfer process are regarded as the main up-conversion emission mechanism of La2Sn2O7:Er3+ nanocrystals.关键词：up-conversion;sol-gel method;Ln2Sn2O7：Er3+;pyrochlore86|52|1更新时间：2020-08-12
- 摘要：Green phosphorescent organic light emitting diodes were fabricated utilizing Ir(ppy)2acac phosphorescent materials. The device structure was ITO/MoO3(40 nm)/hole transport layer/CBP: Ir(ppy)2acac(8%)(30 nm)/BCP(10 nm)/Alq3(40 nm)/LiF(1 nm)/Al(100 nm), the hole transport layers were TAPC(50 nm), TAPC(40 nm)/TCTA(10 nm), NPB(50 nm), and NPB(40 nm)/TCTA(10 nm), respectively. The electroluminescent properties were studied by using different hole transport layer. The current efficiency of these devices achieve 52.5, 67.8, 35.6, and 56.6 cd/A at 6 V, respectively. The reasons are that the stepwise holes injection layers and high hole mobility make holes inject and transport to emitting layer more easily. Moreover, the high triplet energy level blocking layers confine the carriers and excitons in emitting layer. Besides, the color coordinates of all devices are stable.关键词：organic light emitting diodes;hole transport layer;blocking layer134|91|2更新时间：2020-08-12
- 摘要：A series of NaLn4-x(SiO4)3F:xRE3+ (Ln=La, Gd; RE=Tb, Dy, Sm, Tm) phosphors were synthesized by the conventional solid-state reaction at 950℃ for 2 h. The samples were characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectra. The experimental results indicate that all the obtained-samples are pure hexagonal phase. Under UV light excitation, the doped rare earth ions (Tb3+, Dy3+, Sm3+ and Tm3+) phosphor give blue-green, white, orange, and blue emission, respectively.关键词：oxyfluoride system;rare earth ion;phosphor;solid-state method99|27|1更新时间：2020-08-12
- 摘要：Novel red phosphors Eu3+-doped Na0.35BaMo8O16 were synthesized by sol-gel method. X-ray diffraction, scanning electron microscope and infrared spectra were used to characterize the crystal structure, morphology and composition of the Na0.35BaMo8O16:Eu3+ phosphors. The results revealed that the Na0.35BaMo8O16:Eu3+ had an overall smooth surface and a cuboid structure after heated under 800℃. The samples excitation spectra were broadband with a series of sharp peaks at 614 nm, and the highest excitation peak appeared at 465 nm, which indicated that the phosphors matched the light-emitting wavelength of the common blue-emitting InGaN chips. Under 465 nm light excitation, the emission spectra showed intense red-emission at 614 nm, which corresponded to the forced electric dipole 5D0→7F2 transitions on Eu3+ in this phosphor. Additionally, the CIE chromaticity coordinates (0.650 8,0.348 9) of Na0.35BaMo0.8O16:Eu3+ were close to the NTSC standard values (0.67, 0.33). The results suggest that our material is potential red phosphors and can be used for blue-emitting InGaN chips.关键词：Na0.35BaMo8O16：Eu3+;red phosphor;luminescence properties167|57|2更新时间：2020-08-12
- 摘要：The red emitting phosphor Sr2EuxGd1-xAlO5 was synthesized through the solid-state reaction technique. The structure, photoluminescence properties of Sr2EuxGd1-xAlO5 were described. Under the excitation of UV and near UV light, the photoluminescence emission spectra can be assigned to the well-known transitions of Eu3+ from the initial state 5D0 to the final states 7FJ(J=0, 1, 2, 2, 4). The two strong emissions peak at 590 nm and 622 nm, which arose from the 5D0-7F1 and 5D0-7F2 transitions of Eu3+, respectively. When the mole fraction of Eu3+ is 0.75, the emission intensity of the phosphor is the strongest. This phosphor is considered to be a potential red-emitting phosphor for NUV chip white LED.关键词：phosphor;photoluminescence;white light emitting diode100|50|1更新时间：2020-08-12
- 摘要：a-SiO0.35N0.59:H films were fabricated by very high frequency plasma enhanced chemical vapor deposition method and used as the active layers in the light-emitting diodes. Strong red electroluminescence (EL) from the diode can be clearly observed at room temperature. The EL from the diode is peaked at around 715 nm, very similar to that of the PL spectra. The turn-on voltage for the device is 8 V. It is also found that there is a linear relationship between the integrated EL intensity and the injected current. In addition, the I-V characteristics indicates that the Pool-Frenkel (P-F) emission behavior is dominant in the carrier transport process in the diode. Combining with the microstructure analysis for the luminescent active layer, the red electroluminescence is tentatively suggested from the recombination of electron-hole pairs at band tail states of a-SiO0.35N0.59:H layer.关键词：silicon oxynitride;red luminescence;electroluminescence86|42|0更新时间：2020-08-12
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Comparative Study of Polar and Non-polar BeZnO Films Grown by Plasma-assisted Molecular Beam Epitaxy
摘要：BeZnO films were grown on different crystallographic planes (c-, a- and r-planes) of sapphire substrates using plasma-assisted molecular beam epitaxy (P-MBE). High quality BeZnO films were achieved using a multi-layer buffer design with full widths at half maximum (FWHMs) of rocking curves up to 600 arcsec. Polar BeZnO films were obtained on the a- and c-plane sapphire substrates, while the nonpolar ones were obtained on the r-plane sapphire substrate. The Raman spectroscopy confirmed the Be dopants in the ZnO were at the same level in three samples. The BeZnO sample grown on the r-sapphire substrate were found to have largest grains and higher FWHM, while the ones grown on a- and c-sapphire subatrates had the similar fine grains and lower FWHM. However, the photoluminescence (PL) spectra indicated the non-polar BeZnO sample had significantly stronger ultraviolet emission and weaker green emission than polar samples.关键词：BeZnO;sapphire;crystal orientation;molecular beam epitaxy;photoluminescence93|60|0更新时间：2020-08-12 - 摘要：The gratings were fabricated by hologram-ion beam etching technique on the silicon carbide substrate that has fine stiffness and thermal stability. The intrinsic defects of the silicon carbide leads to a rough surface of the grating grooves, the roughness of the bottom and the top of the grating grooves are 29.6 nm and 65.3 nm (Rq), respectively. A uniform silicon coating were deposited by Plasma Ion Assisted Deposition (PIAD) technique on the surface of the silicon carbide substrate, then a super smooth surface was obtained after fine polishing. Characterized by XRD, we found the silicon coating is amorphous. After fine polishing, the surface roughness of the silicon carbide is 0.64 nm(Rq) measuring by AFM. The roughness of the grating grooves are significantly decreased, the roughness of the bottom and the top of the grating grooves are 2.96 nm and 7.21 nm(Rq), respectively. Comparing with the grating grooves before surface modification, the roughness of the bottom and the top are 1/10 and 1/9, respectively.关键词：silicon carbide;surface modification;grating;hologram-ion beam etching;PIAD98|81|0更新时间：2020-08-12
- 摘要：An array of 320×240 micro-LED based on AlGaInP epitaxial wafer with the pixel size of 100 μm×100 μm were designed. By analyzing and simulating the current distribution of the active layer, the AlGaInP mircro-LED arrays with a kind of double strip electrode were designed. Conside-ring the current distribution of electrode with different widths and the shelter of the electrode, the optimized electrode was gotten with the width of 13 μm, and the ratio of emitting area to each pixel is 50.15%. Besides, a fabrication process of the device based on MOEMS technology was presented. Finally, the picture of the double strip electrode was exhibited.关键词：AlGaInP;micro arrays;double strip electrode;MOEMS107|66|1更新时间：2020-08-12
- 摘要：N-polar GaN films were grown by MOCVD on (0001) sapphire substrates. Wet etching experiments using KOH solutions were carried out to verify the polarities of the GaN films. The influence of the nucleation layer growth time on the properties of N-polar GaN films was studied by means of XRD and PL. The results show that the GaN sample of nucleation layer growth time of 300 seconds has the best crystal quality and optical property. Finally, the strain state of the N-polar GaN samples was studied by means of Raman scattering.关键词：GaN;N-polar;nucleation layer;MOCVD144|77|0更新时间：2020-08-12
- 摘要：In this paper, the analyzed and optimized of photovoltaic properties of a-Si:H(p)/i-a-Si: H/c-Si(n) heterojunction solar cell are simulated by the AFORS-HET software. Mainly compared the a-Si:H(p) uniformly doped layer and the surface doping concentration D1 = 1×1020 cm-3 interface doping concentration D2 = 4×1019 cm-3 gradient doping case of photovoltaic properties. The photovoltaic properties comparative and optimized were simulated by the AFORS-HET software. The conversion efficiency can reach 22.32% by gradient doping. Compared with the uniform-doping mode, the gradient doping not only introduced an additional electric field, but also optimized the energy band, spectral response and recombination rate. The simulation results show that the gradient doping can improve the photovoltaic performance of the solar cells efficiently.关键词：gradient doping;photovoltaic performance;band structure;AFORS-HET108|69|0更新时间：2020-08-12
- 摘要：According to high photoelectric conversion performance of quantum dot composite material, we use in situ condensation method to prepare polymer/poly(2-methoxyl-5-octyloxy)-1,4-phenylenevinylene (MOPPV)-ZnSe quantum dot composites. X-ray diffraction, transmission electron microscope, UV-Vis absorption spectroscopy were employed to study their characteristics. The results indicate that MOPPV and ZnSe quantum dots forming a coating or mosaic structure which can be effectively combined, and ZnSe quantum dots keep good crystallinity, each with an average size of 4 nm in the composite, producing the light induced charge transfer phenomenon. The absorption spectra of the composite have a few red-shift with the increasing of the annealing temperature. The study of composite photoelectric performance indicates that it gradually shows obvious characteristic of diode, the power conversion efficiency reaches the maximum of 0.3726% at the temperature of 160℃.关键词：quantum dot;composite materials;annealing treatment;power conversion efficiency100|74|0更新时间：2020-08-12
- 摘要：The difficulty of controlling the polarization of lager aperture VCSEL is the complicated transverse modes after analysing the structures of rectangle aperture VCSEL and sub-wavelength metal-grating VCSEL. So we put forward a new type of structure-oxidation type grating VCSEL structure. This structure can not only introduce anisotropy gain into active region but its biggest advantage is able to perfect control of large aperture VCSEL transverse mode. The sturcture was simulited by finite element software, and it is found that the structure achieve two goals when the grating ridge is 1.8 μm.关键词：vertical-cavity surface-emitting laser;oxide-grating;polarization controlling169|60|3更新时间：2020-08-12
- 摘要：The behavior of the related reliability of InGaN-based blue and green LED chips were investigated with 20, 40, 60 mA constant current stress up to 424 h at room temperature. Under 60 mA constant current stress, the green LED chip showed more prominent optical power degradation at low measuring current levels than high measuring current levels. While, the blue LED chip showed the consistent optical power decrease at different measuring current levels. It should be pointed out that, at high measured current levels (20 mA), blue and green LED chips expressed similar optical degradation (18%) after the aging tests. Meanwhile, the aging stress does not significant affect the forward-bias electrical characteristics of blue and green LED chips, which indicated the similar degradation process in some aging tests. It is believed that the induced defects in blue LED by electrical stress mainly contribute to the nonradiative recombination centers, while in green LED chip the defects contribute to the localized leakage paths rather than the nonradiative recombination centers. Based on the mechanism analysis of blue and green LED, the design of GaN based epitaxial structure was optimized, and the thickness of quantum barrier was reduced to weaken the internal electrical field in the active layer to improve the reliability of LED.关键词：GaN;optical degradation;electrical stresses;degradation mechanism138|79|1更新时间：2020-08-12
- 摘要：In order to study an effective method for quickly detecting the intact jujubes and insect hole jujubes, principal component analysis (PCA) on the optimal wavelengths combined with band ratio were applied to identify the insect hole jujubes. First, the hyperspectral images of jujube in the spectral region between 900 nm and 1 700 nm were acquired for 130 jujube samples (50 intact, 80 insect hole), and obtained region of interests (ROIs) as an average spectral of various jujubes, the wavelengths between 970 nm and 1 670 nm were analyzed and combined with PCA method to determine seven feature wavelengths (i.e. 990,1 028,1 109,1 160,1 231,1 285,1 464 nm). Next, the PCA method was performed again based on important wavelengths and the second principal component (PC2) was used to classify insect hole jujubes. The classification rate of insect hole jujubes and intact jujubes was 67.5%, 100%, respectively. To improve identification rate, band ratio (R1231/R1109) was utilized to distinguish the previously unidentified jujubes and the classification rate of insect hole jujubes was from 67.5% to 90%. The results show that the hyperspectral imaging technology can be used to effectively identify the insect hole jujubes, in the meantime, which can provide research basis for online detection of jujube quality using multispectral imaging technology.关键词：hyperspectral imaging;non-destructive detection;long jujubes;insect hole131|77|10更新时间：2020-08-12
- 摘要：The MIM waveguide loaded Ottos structure was designed to research the characteristics of transmission and attenuation of surface plasmon polaritons (SPPs), and the sphere EM field of the solution was used to achieve eigenvalue of solution in the entire media area. The structure with 750 nm and 1 500 nm media were simulated. The results show that TM0 propagation constants reaches 1.541 in the 750 nm improved structure. With the reduction of the SiO2 dielectric thickness, the reflection coefficient increases, and the resonator direction with different metal dielectric constant have the same trend. With the reduction of the cavity thickness, the reflection phase and the stored energy also reduce.关键词：surface plasmon polaritons;MIM waveguide;Otto structure116|65|0更新时间：2020-08-12
- 摘要：The study of lysosomal fluorescence probe has important theoretical significance and practical value for cell physiological and pathological research associated with lysosome. As a weak basic compound which prefer to the acid lysosome, 7-(diethylamino)-3-(pyridin-2-yl)coumarin (L3) may be a potential lysosome -targetable fluorescent probe. The relationship between pH value and the spectroscopic properties of L3 were investigated as well as lysosome-targetable fluorescent imaging in this study. The results show that L3 can be used as a lead compounds for lysosome-targetable fluorescent probe.关键词：coumarin;fluorescent probe;lysosome.136|81|2更新时间：2020-08-12
- 摘要：By using confocal Raman microspectrometer, near-infrared (NIR) Raman spectra from 60 cases of ex vivo normal, adenomatous polyp and adenocarcinoma colon tissues were obtained. To find the embodiment of the regularity of pathological development of colon cancer on Raman spectral characteristic, we analyzed and compared the Raman spectral properties of the three tissue types, and researched the regularity of spectra-related changes. The results show that significant differences in Raman spectra were observed among the three tissue types at around 830, 855, 1 032, 1 210, 1 323, 1 335, 1 445, 1 450 and 1 655 cm-1. Overall, the spectra of adenomatous polyp was in the middle of the spectra of normal and adenocarcinoma colon tissues, which might illustrate that adenomatous polyp was in the transitional state. Principal component analysis (PCA) and linear discriminant analysis (LDA) were employed to develop diagnostic algorithms for classifying the Raman spectra of different types of colon tissues. Based on the gold standards of histopathologic diagnosis, sensitivities of 96.9%, 85.7% and 97.3%, and specificities of 82.8%, 90%, and 92.3%, respectively were achieved by using PCA-LDA algorithms to discriminate the normal, adenomatous polyp and adenocarcinoma colon tissues. Therefore, near-infrared Raman spectroscopy can not only be utilized to differentiate colon cancer tissues from normal tissues, but also be used for discriminating colon premalignant lesions in molecular level. It is a potential effective method for early diagnosis of colon cancer.关键词：colon cancer;adenomatous polyp;Raman spectroscopy129|72|2更新时间：2020-08-12
- 摘要：Zinc-tin-oxide (ZTO) thin film transistors (TFTs) were fabricated by sol-gel method. Thermogravimetric and differential thermal analyses (TG-DTAs) were performed to investigate the chemical reactivity in the ZTO solutions. The effects of annealing temperatures on characteristics of ZTO-TFTs were investigated in this paper. With the increasing of annealing temperatures, all samples are amorphous, and surface is uniform. The ZTO thin films annealed at 400℃ and 500℃ are highly transparent (>85%) in the visible region. When the annealing temperature increased from 300℃ to 500℃, the threshold voltage of solution-processed ZTO TFTs decreased from 15.85 V to 3.76 V, and the saturation mobility increased from 0.004 cm2·V-1·s-1 to 5.16 cm2·V-1·s-1. Ion/Ioff current ratio of 105 was obtained at 500℃.关键词：Sol-Gel;annealing temperature;thin film transistors;electrical characteristics104|78|1更新时间：2020-08-12
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