最新刊期
卷 17 ， 期 1 ， 1996
- 摘要：Temperature dependence absorption and photoluminescence spectra were used to study the radiative transition processes of CdSxSe1-x nanocrystallites. The relationship between the absorption peak and temperature was fitted using Varshni equation. The results imply that the temperature dependence of absorption peak is the same as that of bulk semiconductor. From the temperature dependence photoluminescence, the relationship between photoluminescence peaks and temperature was obtained and the variationrate was analysed. The dynamics of PL process can also be elucidated simply by the temperature dependence of the process.关键词：absorption spectra;photoluminescence spectra;radiative centre122|63|2更新时间：2020-08-11
- 摘要：The photostimulated luminescence(PSL) of BaFCl: Eu2+ phosphors under UV-irradiation is reported. Through changing the stimulable mode and scan direction of the stimulable light, the dependence o.f the density ratios and photostimulation cross section ratio of the two kinds of F color centers on irradiation wavelength and stimulation readout temperature during,the PSL of BaFCl: Eu2+ phosphors are given. Meanwhile the dependence of PSL intensity corresponding to the two kinds of F color centers on stimulation readout tempelature are studied, and active energy corresponding to F(Cl-) center is also calculated.关键词：photostimulated luminescence;UV-irradiation;F color center;photostimulation cross section;temperature effects121|59|2更新时间：2020-08-11
- 摘要：In this paper we derived hole-burning quantum efficiency by the luminescent dynamical equations under the condition of pumping and gating with a pulsed laser. Holeburning were perfomed at 77K by a 560 nm laser with different laser power. The dependence of hole depth on pulse number were observed and hole burning quantum efficiency with different laser power were obtained. The dependence of hole-burning quantum efficiency on 5DJ-7F0 transition probability were proved by measuring the dependence of hole depth on pulse number in BaF(Cl,Br): Sm2+ and in SrF(Cl,Br):Sm2+ under the same burning condition.关键词：hole burning;quantum efficiency;transition probability107|70|0更新时间：2020-08-11
- 摘要：We present luminescence and Raman spectra of ZnSe-ZnS multiple quantum well structures fabricated by MOCVD at 2K. The mechanism of the fluorescence emission bands and Raman scattering spectra have been distinguished used resonant excitation, resonant Raman and Rayleigh scattering method and the time dependence of Rayleigh scattering intersity.关键词：ZnSe-ZnS multiple quantum well;photofluorescence;Raman scatteing;Rayleigh scattering;resonant excitation107|84|1更新时间：2020-08-11
- 摘要：The photoluminescence spectra of nanometer-size CdS semiconductor microcrystallites doped in glass were measured at various temperatures. The temperature dependence of the peak energy and linewidth of the band-gap luminescence was investigated.Taking the LO phonon interaction into account, the linewidths of the luminescence as a function of temperature were fitted. The inhomogenous broadening constant was obtained and mainly associated with the size distribution of CdS microcrystallites.关键词：photoluminescence;CdS semiconductor microcrystallites;linewidth97|68|2更新时间：2020-08-11
- 摘要：Fluorescence line narrowing technology has been used to study the phonon sidebands of Nx-bound excitons in GaAs1-xPx: N in details. Under selective excitation into inhomogenously broadened Nx band at low temperature, the sharp phonon sidebands like those in low temperature PL spectrum for GaP: N are observed. According to the experimental results, we obtained the energy values of various phonons in GaAs1-xPx: N alloys with the composition x=0.76 and 0.65. The photoluminescence spectrum with periodically repeated phonon sideband structure for GaAs1-xPx: N (x=0.76) is observed and analyzed for the first time.关键词：Ⅲ-Ⅴ semiconductor alloy;photoluminescence;phonon sideband104|62|1更新时间：2020-08-11
- 摘要：Rare earth ion Er+ has been implanted in porous silicon at 350 keV ion energy in 1×1012~1×1015cm2 dose range. After implantation the porous silicon still presented bright visible emission. After annealing, 1.54 μm characteristic emissions of Er3+ in PSi have been measured, and its intensity is much more intense than that of Si processed by same conditions. Further experiments show that enhancement of the Er3+ emission relates to the surface layer of porous silicon. There are a lot of impurity in the surface layer, such as O, C, F etc. Those impurities can form a variety of complex with Er which is favourable for decreasing segregation of Er during annealing, and increasing Er concentration. It is probable that the impurities introduced by electrochemical process give'rise to 1.54 μm luminescence enhancement.关键词：porous silicon;erbium;luminescence;ion implantation104|71|2更新时间：2020-08-11
- 摘要：High brightness thin film electroluminescent devices with ZnS: Tb active layer were prepared by high frequency sputtering method. The impact cross section of Tb3+ was calculated by measuring the decay time, quantum efficiency and the dependence of the two emisson spectrum intensities ratio on applied voltage. The hot electron distribution of ZnS: Tb was studied and compared with that of ZnS: Mn to find out the probable reason of the difference of their efficiency.关键词：ZnS:Tb;thin film;electroluminescence;quantum efficiency;hot electron distribution100|67|1更新时间：2020-08-11
- 摘要：GaInP have been grown on GaAs substrates by metalorganic chemical vapor deposition(MOCVD) in a horizontal, atmospheric pressure reactor. The growth characteristic of GaInP wes studied by PL measurement, SEM, X-ray double crystal diffraction.Ⅴ/Ⅲ ratio influenced the optics quality of GaInP. Featureless surface morphologies Ga0.51In0.49P were obtained. At a Ⅴ/Ⅲ ratio of 90, temperature was 680℃, the epilayer had photoluminescence(PL) FWHM of 26meV at 300K, the best reported results to date. The background carrier concentration of Ga0.51In0.49P was 1.I×1015cm-3. The mismatch of Ga0.51In0.49P was 4×10-4.关键词：MOCVD;GaInP growth;Ⅴ/Ⅲ ratio115|50|1更新时间：2020-08-11
- 摘要：The growth of quaternary InAsPSb epitaxial layers DH using the constant temperature LPE method is reported in this paper. The variation of the epitaxial surface morphology under different conditions,the effect of growth condition on the properties of epilayers,and defects of epilayers produced in growth process have been researched. Thegrowth morphology and characteritics are analyzed. The results show that surface and properties of epitaxy were controlled by changing the growth and supercooling temperature.关键词：growth temperature;supercooling temperature;InAsPSb;surface morphology96|85|0更新时间：2020-08-11
- 摘要：This paper reports the crystal structure, characteristics of cathodoluminescence and photoluminescence of the Y2O3: Eu phosphor with the spherical and superfine particles(120~250 nm)produced by urea-sol process for the first time.The relative intensity of this kind of superfine Y2O3: Eu phosphor under 254 nm excitation is lower than that of the commercial sample with micrometer size of 6 μm. But under the excitation of the electron beam with the middle accelerating voltage(~≤10kV) the cathodoluminescent intensties of the superfine Y2O3: Eu particles are higher than that of the commercial Y2O3: Eu phosphor. The experimental results are discussed. It is considered that the back scattering for UV photons and electrons and the surface effect in the superfine Y2O3: Eu particles in which the specific surface area(cm2/g) is larger and the surface atoms are in a higher energy state than the interior atoms are important.关键词：luminescence;superfine particle;Y2O3：Eu;phosphor102|45|10更新时间：2020-08-11
- 摘要：Thin films of nickel oxide were prepared by DC sputtering of nickel hydrooxide powder-pressed target in Ar(or Ar+O2) gas. The process is presented in this paper.SEM and XPS were employed to investigate the microstructure of the film and identify its chemical composition. The electrochemical and optical properties of the films were determined by the cyclic voltammetry, spectral transmittance. Our results indicate that the a-NiOxHy thin films have good electrochromic characteristics.关键词：electrochromism;DC sputtering;NiOxHy119|47|0更新时间：2020-08-11
- 摘要：A geodesic lens with the optimum profile meridional shape calculated from the new exact theoritical formula[2.3] was fabricated by the single diamond machine. The curvature radius at the point connected with the planar surface is infinite, and doesn't have singulity. The samples of spherical aberration-free unspherical geodesic lenses were fabricated on the LiNbOa substrates with the size of 45×20×2.5mm, and two lenses were arranged on each substrate. The light output from a semiconductor laser with the wavelength of 670nm was end-coupled into sample, the focal spot half-width measured at the other edge is 2.9μm.关键词：optimum geodesic lens;LiNbO3119|67|0更新时间：2020-08-11
- 摘要：In this paper, the working principle and the structure of an X-Y cross matrix fluorescent character display panel is introduced. A close study of the property of this display panel is made. The relationship between its brightness and its operating voltages of each electrode and the modulation characteristics of the panel are discussed. On the basis of these characteristics, the driving scheme and the ways of designing driving circuits are presented. Moreover, an HBM-201 high brightness display device made up of this kind of display panel with brightness over 5000cd/m2 is introduced. Under a filter the displayed characters can be clearly read in the sun-light.关键词：flourescent display;matrix display;outdoor display105|59|0更新时间：2020-08-11
- 摘要：Second-harmonic generation(SHG) of stilbazium salt Langmuir-Blodgett monolayer film in the different surface pressure was measured. We got the incremental SHG signal at the low surface pressure. After the transparent spectra of stilbazium salt were measured, we got the following results. The stilbazium salt on LB film was in the form of solid state. The absorption peak 351 nm of the aggregation of solid state at the low surface pressure led to that the fourth order nonlinear optical susceptibility X(4)(-2ω;ω,ω,ω,-ω) was enhanced resonantly. Because of X(4), we got the incremental SHG signal.关键词：Langmuir-Blodgett film;surface pressure;second-harmonic generation;molecular hyperpolarizability;aggregation105|67|0更新时间：2020-08-11
- 摘要：The luminescence properties of rare earth complexes with m-methylbenzoic acid REL3 (RE=Eu, Tb; HL=m-CH3C6H4CO2H) and with o-chlorobenzoic acid REL3 H2O RE=Eu, Tb; HL=o-ClC6H4CO2H) are reported in this paper. The influence of the coordination environment on energy transfer; the luminescence intensity and life time has been discussed.For Tb ions when the ligand in the complexes is changed, the position of the maximum of the excitation wavelength is displaced lightly, the emission of Tb-mm is much stronger than that of Tb--Cl, and Tb-mm has a longer decay. The luminescence phenomenon of Eu-mm and Eu-Cl, however, is contrary, both Eu-mm and Eu-Cl showstronger 5D0→7F2 transition of Eu3+, but Eu-Cl has a stronger emission intensity and longer lifetime. The reason for these results is believed to be due to the coordination environment of the complexes.Although there exist O-H bonds with high vibrational energy in Eu-Cl, the formation of hydrogen bonds may reduce the vibrational energy by increasing the rigidity of the complex. So the energy transmission can occur efficiently from ligand to Eu3+ and the emission of Eu-Cl is stronger than that of Eu-mm. The deactivation via vibronic coupling is, however, less efficient for Tb3+, and the emission of Tb-mm is stronger than that of Tb-Cl.关键词：m-methylbenzoic acid;o-chlorobenzoic acid;europium;terbium;luminescence104|69|4更新时间：2020-08-11
- 摘要：This paper reports a new complex chemiluminescence, i. e. luminol-IO4-catalyzed by Co(1, 10-phen·)32+ complex. Based on this catalyst a new chemiluminescence method for determining trace of Co(Ⅱ) is proposed. The detection limit is 8×10-8g/L Co(Ⅱ),the linear dynamic range is 1×10-6~1×10-4g/L Co(Ⅱ) and the variation coeffient at a cobalt concentration of 1×10-4g/L Co(Ⅱ) is 2.5%(n=10). This method has been satisfactorily applied in the determination of trace cobalt ion in VITAMIN B12 samples.99|61|1更新时间：2020-08-11
- 摘要：ZnSe pin structure has been grown on n--GaAs substrate by AP-MOCVD. Bulegreen electroluminescence of ZnSe pin diodes was obtained at 77K. The peak position located at 465 urn and had a big full width at half-maximum(FWHM). With increasing pulse current, its FWHM was compressed.104|73|1更新时间：2020-08-11
- 摘要：In our organic EL device, we found that Tb(AcA)3·phen can be used as emission layer, and it also has good electron-transport property. This special electron-transport role will simplify fabrication processes for organic EL devices.109|62|1更新时间：2020-08-11
- 摘要：Abstract In order to obtain pure Tb3+ sharp band emission for Tb-OEL devices polymer PVK having more broad bandgap has been used as hole transporting layer in the OEL devices,and only Tb3+ OEL emissions were get in the diode(ITO/PVK/Tb(AcA)3,·phen/Al).On the other hand, the PVK polymer materials should provide more stable hole-transporting layer than low molecular materials, and give better durability for the OEL diveces.106|53|5更新时间：2020-08-11
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