最新刊期

    16 4 1995
    • Vol. 16, Issue 4, Pages: 262-264(1995)
      摘要:Abstract The glasses doped with ZnS:Mn2+ nanocrystals were successfully fabricated to study the size effects on the luminescent properties of ZnS:Mn2+.Photoluminescence measurements show the characteristic Mn2+ emission from within the ZnS host crystaland photoluminescent excitation measurements show a large blue shift of the excitation peak which is indicative of the increased band gap. An increased intensity of the SA emission was observed with the decrease in the size of the ZnS:Mn2+ crystallites.  
        
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    • Bang Yu, Huang Xingliang, Liu Xiaohan, Huang Daming, Jiang Zuiming, Gong Dawei, Zhang Xiangjiu, Zhao Guoqin
      Vol. 16, Issue 4, Pages: 285-292(1995)
      摘要:Band edge luminescence with no deep level emissions is reported for Si1-xGex/Si quantum well structures grown at high substrate temperatures by solid source St mole cular beam epitaxy, no-phonon transitions and transverse optical phonon replicas were clearly identified. Systematic studies based on Rutherford ion backscattering and X-ray diffraction were performed.Backscattering and channeling anomalous spectra was observed due to the strain of superlattice.Photoluminescence(PL)and X-ray rocking curve analysis of the sample indicated that a good crystalline quality and commensurate growth is essential to radiative recombination.The dependence of PL on the growth temperature were discussed.  
      关键词:Si-MBE;SiGe/Si quantum wells;strutures;luminescence   
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    • OPTICAL GAIN OF STRAINED (Ge)5/(Si)5 SUPERLATTICE

      Dong Wenfu, Wang Qiming
      Vol. 16, Issue 4, Pages: 293-297(1995)
      摘要:The linear gain and the threshold current density of heterostructure laser are analyzed for(Ge)5/(Si)5,superlattice,based on the density-matrix theory of simeconductor laser with relaxation broadening.The quantitative comparison of the linear gain and thethreshold current density for (Ge)5/(Si)5 superlattice and GaAs bulk crystal is made theoretically.  
      关键词:(Ge)5/(Si)5 superlattice;Optical gain   
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    • HIGH PRESSURE STUDY OF FLUORESCENCE SPECTRA FOR GdOBr:Eu

      Li Hongnian, Zhao Xuyi, Liu Shenxin, Chi Yuanbin, Wang Lizhong
      Vol. 16, Issue 4, Pages: 298-305(1995)
      摘要:he fluorescence spectra of GdOBr:Eu were measured and analyzed at room temperature and under high pressure up to 12GPa.43 lines were observed at ambient pressure in the wavenumber of 13000-21500cm-1.These lines can be attributed to 5D0-27F0-5 transitions of the 4f6 configuration for GdOBr:Eu.Most of these lines shift to the red with increasing pressure.There are few lines which firstly shift to the blue and thento the red.All these lines become increasingly weaker with increasing pressure.From the fluorescence spectra,26 Stark levels were determined. Under pressures,the 5D0-2 Stark levels shift downwards,but the 7F0-5,Stark levels shift upwards or downwards irregually.  
      关键词:GdOBr:Eu;high pressure;fluorescence spectrum;crystal field level   
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    • Zhao Jin, Tang Shuyan, Chen Shuliang
      Vol. 16, Issue 4, Pages: 306-311(1995)
      摘要:The Raman spectra of gutta-percha of eucommia ulmoides were measured at pressures up to 5'45GPa and room temperature.The pressure depences of conresponding atom groups on the carbon skeleton of the polymer were reported. The different pressure-induced band shift rates were analysised according to the interatomic and intermolecular interactions and geometry of the molecular chain. In the mean while,the new phenomena, such as the changes of intensity and shape of the bands and the presence of some weak bands at high pressures,were explained by effects of Fermi resonance andthe slipping of energy levels.  
      关键词:Raman spectroscopy;gutta-percha;high pressure;trans-polyisoperene   
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    • DEEP LEVELS IN ZnSe:Al

      Wang Jifeng, Huang Ximin, Zhang Zhishun
      Vol. 16, Issue 4, Pages: 312-316(1995)
      摘要:In order to study on the intrinsic defects and behavior of Al in ZnSe,the deep levelswere detected by DLTS in the range of 300-700℃.Experimental results show that thedeep level located at Ec-0.33eV exists in both ZnSe and ZnSe:A1,Ec-0.70eV only in ZnSe:A1.Former is thought to be caused by Vse or Zni,the later by VseAlzn.  
      关键词:nSe:A1;DLTS method;electronic trap;intrinsic defect   
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    • STUDY OF MODE REFRACTIVE INDEX LENS

      Lu Ping, Xu Chengjie, Fan Junqing
      Vol. 16, Issue 4, Pages: 317-320(1995)
      摘要:The experimental restults of the optical waveguide mode refractive index lens fabricated on K7 glass substrate are reported in this paper.The design,the fabrication and the characteristic measurement of the lens are described.  
      关键词:ntegrated optics;optical waveguide;lens   
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    • NUMERICAL MODELLING OF NONLINEAR TE WAVES IN LOSSY WAVEGUIDES

      Zhao Anping, Yu Rongjin, Hong Peizhi
      Vol. 16, Issue 4, Pages: 321-324(1995)
      摘要:A numerical approach based on the finite element technique is developed for the analysis of nonlinear TE modes in lossy waveguides.In this approach, the powerdependent complex propagation constants and the local electric field distributions of TE waves in lossy nonlinear waveguides are obtained directly from the waveguides,without any approximation.As an application of this method,the power dispersion relations and electric field profiles for TE0 mode in a lossy nonlinear waveguiding system are presented.  
      关键词:lossy nonlinear waveguide;TE wave;finite element method   
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    • MICROSECOND PHOTOLUMINESCENCE DECAY OF POROUS SILICON

      Li Qingshan, Li Peng, Ma Yurong, Fang Rongchuan
      Vol. 16, Issue 4, Pages: 325-329(1995)
      摘要:Microsecond photoluminescence decay of porous silicon has been measured.The decay parameters have been studied as a function of emission wavelength for samples at different preparation conditions.It was found that the decay parameters strongly related to the emission wavelengths,but showed independent to the preparation conditions of samples.The results were explained in terms of three-layer model.  
        
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    • SCANNING ELECTROMICROSCOPY AND LUMINESCENCE STUDY OF GaN:Zn

      Li Qingmian, Xu Mai, Ma Renxiang, Xun Yali, Li Fengmian
      Vol. 16, Issue 4, Pages: 330-336(1995)
      摘要:The surface topography,concentrition distribution of doped Zn ions and microregion cathodo luminescence in GaN:Zn epitaxial films were studied.The results show that four types of zincic luminescence centres can exist in GaN epitaxial films,depending on the crystal structures and Zn concentrition of micro-region.  
      关键词:GaN Zn;luminescence   
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    • ENHANCE OF LIGHT EMISSION FROM METAL-OXIDE-METAL-TUNNEL JUNCTIONS

      Jiang Mengshu, Xu Shijie, Zheng Keqin
      Vol. 16, Issue 4, Pages: 337-342(1995)
      摘要:After improving fabrication technic,an observation of Al-A12O3-Au light emitting tunneling junctions deposited on underlayers of CaF2 has been made.The applied bias can be up to 5.3V at room temperature,and the efficiency can be tip to 8.2×10-4.The above two datum were respectively higher than before.The emission spectra are characterized by the cutoff frequence near 3.26eV and the peak at around 2.leV.These characteristics can be understood in the results of new experiments accomplished by us andthe present theoretical frame.Particularly,STM has been used to measure the surface roughness. According to our STM topograph of top An-surface of tunnel junction with CaF2 underlayer and the theory of Labs and Mills,this paper,for the first time,suggests that the above peak around 2.leV perhaps corresponds to surface--plasmonpolariton(SPP)decoupling most efficiently.  
      关键词:metal-oxide-metal junction;surface plasmon polariton(SPP );surface roughness   
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    • Liu Chengmei, Guo Junshi, Xie Hongquan
      Vol. 16, Issue 4, Pages: 343-349(1995)
      摘要:The electroluminescent properties of polymeric electroluminescent diodes(PELED)b.ased on poly(2,5-dibutoxy phenelene vinylene),PDBOPV,and factors effecting the properties were studied in this paper. The peak wavelength of diodes was 590urn,turn on voltage 12V,and maximum brightness 112 cd/m2.Conversion conditions of PDBOPV affected the light intensity and peak wavelength.The diodes could work in air with good stability,and quantum efficiency reached to 0.16% phototron/electron.The mechanism of electroltlminescence was investigated preliminarily also.  
      关键词:electroluminescence;diode;poly(2;5-dibutoxy phenelene vinylene);functional polymer   
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    • Vol. 16, Issue 4, Pages: 350-353(1995)
      摘要:Emission spectra and current-voltage characteristics of electroluminescent EL films utilizing 8-hydroxyquinoline aluminum(Alq3) and diamine were measured.Emission spectrum of double-layer EL film made of Alq3 and diamine is similar with that of single layer EL film of Alq3.A forming process appeared in the course of driving EL cell,the transfer-voltage of the process probably is relevant with deposition quality of eletrode and evaporation condition of EL films  
      关键词:electroluminescent(EL);8-hydroxyquinoline aluminum;film   
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    • EFFECTS OF PHEN ON THE LUMINESCENCE OF Eu3+ AND Tb3+ COMPLEXES WITH SAL

      Zeng Haiyan, Yang Yansheng, Huang Shihua
      Vol. 16, Issue 4, Pages: 354-361(1995)
      摘要:Ternary complexes TbPhen2Sal2 and EuPhen2Sal2 were prepared. Their UV absorption spectra and fluorescence yields were compared with each other and with those of the binary complexes TbSal3·H2O,TbPhen2Cl3 and EuSal3·H2O.The UV absorption spectra of the ternary complexes is dominated by the absorption of Phen.Hence the fluorescence properties of the ternary complexes are determined by the energy transfer from Phen to the rare earth ions.Fluorescence intensity of the Eu ternary complex is higher than that of the binary complex, while it is in contrast for Tb complexes. This result can be well explained by the difference in energy mismatch between the lowest triplet of Phen and the first excited rare earth state.  
      关键词:Phen;Sal;Eu;Tb;fluorescence   
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    • FABRICATING OF OPTICAL FIBER ENCODER

      Li Qingmian, Qi Wenjun, Li Xiangwen, Xu Mai, Gao Shuqin
      Vol. 16, Issue 4, Pages: 365-367(1995)
      摘要:The principle.design and technical parameters of optical fiber encoder are reported in this paper.Because optical fiber encoder can contral and detect systems operated in remote distance,it is used in inflammable.easy explosive and poison environments. Optical fiber encoder will have applications in machinery.chemical industry. mining and medical treatment fields.  
        
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    • VISIBLE EMISSION OF Ge NANOCRYSTAL FROM Si MATRICES

      Yuan Guang, Song Hang, Jin Yixin, Zhang Baolin, Zhou Tianming, Ning Yongqiang, Jiang Hong, Li Shuwei
      Vol. 16, Issue 4, Pages: 368-370(1995)
      摘要:Abstract The pure Ge and SiO2 were deposited on Si wafers by rf-magnetron co-sputtering technique and then annealed in N2 gas atmosphere.The annealed sample shows a strong visible emission and for the first time,an emission peaked at 540 urn was observed.Theluminescence was not observed from the sample as deposited with SiO2.  
        
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    • THE STUDY OF OPTICAL NONLINEARITIES IN ZnCdSe-ZnSe MQWs USING Z-SCAN

      Ma Jing, Wang Shumei, Shen Dezhen, Fan Xiwu
      Vol. 16, Issue 4, Pages: 371-373(1995)
      摘要:Abstract The third-order nonlinearitiesin ZnCdSe-ZnSe multiple quantum wells (MQWs)grown by the metal-organic chemical vapour deposition(MOCVD)on GaAs substrates have been studied using Z-scan at room temperature.The research result indicates that theRe(X3)in the ZnCdSe-ZnSe/GaAs MQWs is about-1.02×10-5 esu.  
        
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