最新刊期
卷 6 ， 期 1 ， 1985
- 摘要：In recent years there has been considerable interest in blue EL emitted by forward-biased ZnSe MIS diodes[1-5]. In our earlier work [6,7], attention was directed to determining the origin of two emission bands in the blue at 4655 and 4770 Å at room temperature. In the present paper the main interest is focused on the spatial distribution of blue EL in ZnSe MIS diodes.Nominally undoped ZnSe crystal, grown in this laboratory, were used in the present experiments. The boule crystals were grown from the vapour phase in sealed capsules containing slight excess of zinc [8,9]. Dice with dimensions of 3×3×1 mm3 were cut from the boules, and annealed in molten zinc at 850℃ for 100 h to reduce their resistivities to the range 1-10Ωcm. After polishing and etching, one large area face of the dice was then provided with an indium ohmic contact. A thick (500-1000 Å) layer of ZnS was deposited on the opposite face by electron beam, and finally a circular gold electrode 1 mm in diameter was evaporated on top of ZnS layer.The photo of EL spots was taken from the surface of the dice carrying the gold contact with Model XJL-01 optical microscope. Model HHS-2X scanning electron microscope has been used to study the ZnSe diodes.114|68|0更新时间：2020-08-11
- 摘要：Transmutation doping is a well established technique for obtaining low doping concentration in silicon.Similarly, in GaAs,this technique can be very useful in order to introduce low doping without compensation.However, these is a lack of data concerning the damage introduced by thermal neutron irradiation and the effect of annealing on the defects appearing during the irradiation.In this work we have studied the defects appearing during the neutron irradiation and the effect of annealing by means of photoluminescence at 77K.The starting samples were (111) oriented GaAs slices doped with Si and grown by the horizontal-zone method. Some parameters of the starting sample are given in the table.116|49|0更新时间：2020-08-11
- 摘要：Recently there has been considerable interest in blue electroluminescence (EL) in ZnSe diodes[1-6]. Two blue EL emission bands in Au-ZnSe MIS diodes at room temperature (RT) have been reported by us[4], attention was directed to determining the origin of two blue EL bands. Hu Deliang[5] has reported one blue EL emission band in C-ZnSe:Ga MS diodes at RT. In the present paper effort is concentrated on examining the origin of the blue EL emission band in C-ZnSe:Ga MS diodes.113|56|0更新时间：2020-08-11
- 摘要：In part I of this series of papers[1], the absorption, excitation and emission spectra of Ce3+,Tb3+, Er3+ and Tm3+ ions in phosphate, germanate tellurete glasses have been reported. In this paper experimental and calculated results of radiative and nonradiative transition rate of these ions in verious glasses are given. Radiative transition rates are calculated with intensity parameters, which is obtained by fitting the absorption spectra with Judd-Ofelt[2] theory. Because the luminescence lifetime of Ce3+, Er3+ and Tm3+ is rather short and difficult to be determined, less work on relaxation processes of these ions in glasses has been done. Exciting the samples with short pulsed (pulse width 10ns) from an exciter laser, lifetimes of fluorescent ions are measured. Nonradiative transition rates are then calculated from the measured lifetimes and radiative transition rates.118|27|0更新时间：2020-08-11
- 摘要：The internal quantum efficiency ηi and the external differential quantum efficiency ηex are the main physical parameters of semiconductor lasers. A new measurement method suggested by H.S.Sommer (1978) has been proved by our experiments.305|76|0更新时间：2020-08-11
- 摘要：In recent years quite a few papers on luminescence have been concerned with the fluorescence of Dy3+ in oxygen dominated systems, for example, YOV4 and Ga2O3 which have fairly high quantum efficiencies. But it is also known that alkaline earth thiogallate doped with Ce3+, Eu2+ and Er3+ also gives high luminescence output. So we were tempted to try to prepare thiogallate phosphors activeted by Dy3+ ion expecting to obtain good luminescence for CRT.98|58|0更新时间：2020-08-11
- 摘要：In this paper, the fluorescent properties of DyxTbyY1-x-yP5O14 crystals have been investigated. An important difference with TbxTbyY1-x-yP5O14 crystals is that the 5D3-7FJ transitions of Tb3+ ions are quenched at low concentration and 5D4-7FJ transitions of Tb3+ ions are sensitized because the Dy3+ presents in crystals. The reason is that the 5D3-5D4 transition of Tb3+ and the 6H15/2-6H11/2 transition of Dy3+ produce the cross relaxation, in addition to the 7F8-7F0 transition of Tb3+.We compared the fluorescent intensities between Tb0.1Dy0.1Y0.8P5O14 and Tb0.1Dy0.1Y0.9P5O14 crystals, it was found that the fluorescent intensities of Tb0.1Dy0.1Y0.8P5O14 crystals was much stronger than Tb0.1Dy0.1Y0.9P5O14 crystals in the same condition. When the Tb3+concentration is constant, the fluorescent intensities of Tb3+ decrease with the increase of Dy3+ concentration120|72|0更新时间：2020-08-11
- 摘要：Eu3+-activated oxysulfides of lanthanum and yttrium are good luminop-hors. In order to improve their luminescent efficiency and find a better host material for Eu3+ ions, we have investigated the cathodo,UV photo-and roentgeno-luminescent properties of Eu3+-doped (Y1-xLax)2O2S, i. e. their luminescence brightness, emission spectra, luminous chromaticity vs. their compositions.128|39|0更新时间：2020-08-11
- 摘要：InGaAsP/InP edge-emitting LED's are capable of high coupling efficiency, winder tandwidth and narrower spectral halfwidth. In this paper,the characteristics of InGaAsP/InP edge-emitting LED's are described. The four-layer InGaAsP/InP DH wafers used for fabrication of the EELED's were grown by LPE technique. They are a 4-5μm n-type Inp buffer layer, an un-doped InGaAsP/InP active layer whose thickness varies from 0.2μm to 0.8μm; a p-InP confining layer and a Zn-doped cap layer,respectively. The position of p-n junction and concentration profile of wafers.100|59|0更新时间：2020-08-11
- 摘要：Based on our method for preparing ZnS:RE, a new flux method for preparing Sm3+ activated alkaline earth sulfide has been developed. The luminescence effeciency of the new amber phosphor prepared with our method, is about 12%. The phosphor consisted of well-crystallized dispersed particles and the surface of the particles is smooth. The emission color of the phosphor is orange-yellow with chromaticity x=0.563, y=0.423. It is a current amber CRT material for the computer terminal display. The voltage dependence of the intensity under 1μA/cm2 CR excitation is better than that of P1-Zn2SiO4:Mn. The luminance is about 90% of P1. The properties of the CRT coating with the amber phosphor are expected to be available for the computer terminal display.102|83|0更新时间：2020-08-11
- 摘要：In the Laue diffraction photographs of ZnS single crystal containing one-dimensional disorder,there are some anomalous diffraction spots which are different from the normal diffraction spots in shape, i. e. so called"Anomalous Diffraction Spots"("ADS") (see Fig. 4-10).In the Laue diffraction analysis of ZnS crystal 3C⇔2H structure transformations, in order to define the stacking faults,new phases created from the matrix,and their created directions, the "ADS" must be indexed.103|19|0更新时间：2020-08-11
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