最新刊期

    3 3 1982
    • COMPENSATION IN Ⅱ-Ⅵ COMPOUNDS

      Jin Yi-xin
      Vol. 3, Issue 3, Pages: 1-11(1982)
      摘要:In this paper the development of study on the compensation in Ⅱ-Ⅳ compounds and the efforts made for decreasing the effect of the compensation on the conductivity type conversion are reviewed.  
        
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    • INVESTIGATION OF NEPHELAUXETIC EFFECT

      Zhang Si-yuan
      Vol. 3, Issue 3, Pages: 12-18(1982)
      摘要:The producted reason of the nephelauxetic effect is investigated.The dependent factors of the effect are showed to be the i (ionic characters of the bond), M(coordination numbers) and R(the bonding average length between the central metallic ion and the ligands).Also,the conditions of producted the nephelauxetic or contra-nephelauxetic effects are showed. The law of displaced energy levels of the rare earth compounds is discussed and the red or blue displacement of the spectral lines is explained in the solid.  
        
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    • GREEN ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE IN CdS

      Fan Xi-wu(X. W. Fan), J. Woods
      Vol. 3, Issue 3, Pages: 19-27(1982)
      摘要:The electroluminescence emission spectrum of forward-biased MIS diodes on high-purity single crystal CdS has been studied over the temperature range 50-290K.At room temperature the emission consisted of two intense bands in the green at 5135±25Å and 5300±15Å,while at lower temperatures considerably more structure was observed.Thus at 50K free and bound ex-citon emission was particularly prominent. Evidence is presented to suggest that the band at 5135±25A at room temperature is associated with free ex-citon recombination following scattering from free electrons in the conduction band.The band at 5300±15A is attributed to free exciton recombination with the emission of two longitudinal optical phonons.The photoluminescence emission of as-grown CdS crystals has been compared with that of crystals rendered semiconducting by heat treatment in molten cadmium.This treatment suppressed the free-to-bound(HES) and bound-to-bound edge emission.As well as the I1 bound exciton line,which was also preferentially excited ion electroluminescence.  
        
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    • F. J. Bryant, Zhong Guo-zhu
      Vol. 3, Issue 3, Pages: 28-32(1982)
      摘要:Ion implantation technigues have been used to produce ZnS diodes which give different colours of electroluminescence emission if the excitation parameters are changed.One type of ZnS diode has Nd3+ implanted in one surface and Er3+ implanted in the opposite surface. Emission occurs only at the negatively-biased surface and stripe geometry electrodes allow green (Er3+) or orange (Nd3+) emission to be observed from one face, according to the polarity of applied voltage. A second type of ZnS diode has both Er3+ and Nd3+ implanted into one surface at different depths and gives different colours in the green (Er3+) to orange (Nd3+) range according to the magnitude of the applied voltage.  
        
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    • EPR STUDY OF S2- CENTER IN SCAPOLITE

      Liu Hong-kai, B. Canny
      Vol. 3, Issue 3, Pages: 33-40(1982)
      摘要:A detailed investigation of the angular variation of the g-tensor of the S2- molecular ion permits us to determine the orientation of the S-S band direction and the p-function direction in a mineral crystal:luminecent scapolite.The study of the hyperfine and"ligand" hyperfine lines shows that the electronic spin of the S2- center interacts with the nuclear spin of two Cl- ion neighbours.  
        
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    • Tang Shu-yan, Huang Li-ye, Jin Chang-qing, Chen Lian-chun, Meng Ji-wu, Jin Chang-gen
      Vol. 3, Issue 3, Pages: 41-45(1982)
      摘要:A formula (chla2)n is given for chla oligomer solved in dehydrous and nonpolar 13-thy by use of the spectral deconvalution of Gaussian and 2-order derivation calculation. The aggregation number n is determinated to be 4, i.e. (chla2)4.The spectral properties of the chla oligomer are anologous with that of the antenna chla in vivo. This chla oligomer is the better model for the chla in the antenna.  
        
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    • EFFECT OF Ce ON Tb3+ ION LUMINESCENCE PROPERTIES IN YAG HOST

      Wang Zhi-hua, Zhao Shu-yun, Wei Jian-jiang, Qi Dong-juan, Wu Yuan
      Vol. 3, Issue 3, Pages: 46-53(1982)
      摘要:It was experimentally found that incorporation of Cein YAG:Tb remarkably enhances the 5D47F transition intensity of Tb3+ ion, thus, changes relative energy distribution of emission spectrum, rises luminescence brightness, improves current and voltage characteristics, reveals a potentiality of improving the luminescence properties of commercial P53 phosphor. It has been shown that this enhancement effect can be attributed to energy transfer from Ce3+ to Tb3+ ions. The mechanisms of energy transfer above Were discussed. The transfer process was analysed.  
        
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    • THE f-f TRANSITION OF Eu2+ IN KMgF3 AND FACTORS OF EFFECT ON IT

      Shi Chun-shan, Ye Ze-ren, Lu Hong-de, Su Qiang
      Vol. 3, Issue 3, Pages: 54-61(1982)
      摘要:The f-f transition of Eu2+ in powder KMgF3 and effects of temperature, concentration and halogen ions etc on it were investigated. Some regularity of fluorescence spectrum was observed. It is possible that KMgF3:Eu2+ doped with Br may be used as phosphor for high pressure mercury lamp.  
        
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    • Shou Chuan-zhong
      Vol. 3, Issue 3, Pages: 62-71(1982)
      摘要:ZnO-blended YOS phosphor is well-known to be excitable by low energy electrons.It has been found that the phosphor exhibiting a lower excitation threshold voltage and a higher brightness can be performed with ZnO by means of precipitation method as compared with the mechanical mixing method commonly used.The presence of ZnO has a double effects on the luminescence of YOS phosphor in device. Under lower anode voltage, ZnO always play an important role on maintaining the low energy electron excitation, whereas it will inhibit the emission of YOS as the anode voltage raises. Hence, there is an optimum ZnO-containing amount, which is perfectly dependent on the anode voltage applied.  
        
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    • Shui Hai-long, Zhang Gui-cheng, Wu Xiang-sheng, Chen Qi-yu, Xu Shao-hua, Yang Yi, Chen Rui-zhang, Hu Dao-shan
      Vol. 3, Issue 3, Pages: 72-77(1982)
      摘要:The three and four layer InGaAsP/InP DH wafer used for fabrication of the LED's were grown by LPE technique. The InGaAsP/InP DH LED's have been fabricated. The device output was over 1mW, highest value was about 2mW. The output power of the tail fiber (core diameter 60 μm, N.A.=0.23) was over 50 μW. In this report the characteristics of the InGaAsP/lnP DH LED's are described and the characteristics of the output saturation and degradation Were discussed.  
        
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    • USING LOW-VOLTAGE IC TO DRIVE DC-ELALPHANUMERIC PANELS

      Yang Zhong-yi, Sun Rui-zeng, Shi Qi-wu, Huang Wei-dong
      Vol. 3, Issue 3, Pages: 78-82(1982)
      摘要:The powder electroluminescent panel is a sort of under developing and more perfect solid flat display devices.Research work in this field is in progresses both at home and abroad.And these devices have practically been applied into some areas.Just like the a.c.powder electroluminescent panel (AC-EL), the d.c. powder electroluminescent panel (DC-EL), since it is a solid flat display device, has the advantages of large viewing angles, soft light and the ease of being made into a variety of display figures.It's main problem is the need of high driving voltage.The major content of this article is foused on some issues of circuit designing, using the ordinary low voltage ICs.Because of the good characteristics of the threshold voltage of DC-EL devices, it is possible to drive DC-EL alphanumeric panels with a 30 volt TTL decoder by a floating drive technique. Experimental results are satisfactory during half a year's time. Thus, it could be expected that the DC-EL alphanumeric panels will be broadly adopted in some instruments as the display devices.  
        
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