最新刊期
卷 3 ， 期 2 ， 1982
- 摘要：A new explanation of the luminescence spectrum of the N dopped alloys (Ga,In)P is given.We have observed five excitonic bands in the emission spectrum.One of them,labeled N0,is attributed to the radiative recombination of the free exciton. The others are due to the excitons bound to different luminescence centers which are composed of one N atom with different surroundings. The binding energies of excitons bound to different Ga-N-In configurations are estimated.90|119|0更新时间：2020-08-11
- 摘要：Under the hydrostatic pressure up to 12 kbar at 77K,the photolumines-cence spectra of the Cr2+ impurity are observed in n-GaAs samples. It is the internal transition from the excited state 5E to the ground state 5T2 of the Cr2+ icn. In GaAs: Cr2+, there is a strong Jahn-Teller effect which gives an important influence on the emission spectra.We calculate the emission spectrum on considering the static Jahn-Teller effect and compare the theoretical spectrum with the experimental results. The Jahn-Teller energies of the 5E and 5T2 states are estimated.120|43|0更新时间：2020-08-11
- 摘要：Green luminescent tetrahedral complexes (C5H5NH)2MnCl4 and ((CH3)4N)2 MnCl4 have been extensively studied. But their E. P. R. spectra show only very wide bands without any fine and hyperfine structure. By incorporating low concentrations of Mn2+(x=1%)in isomorphous(C5H5NH)2MnxZn1-xCl4 or ((CH3)4N)2 MnxZn1-xCl4,we could derive from angular variations the whole set of parameters of the spin Hamiltonian. The tetrahedra are highly distorded, resulting (in all cases) in a C1-symmetry.96|27|0更新时间：2020-08-11
- 摘要：Visible and infrared d.c.e.l.emission has been observed in thin films of ZnS:Cu:Nd:Cl prepared by co-evaporation in vacuum.The lifetimes of the excited states of the Nd3+ ion and the emission intensities at various wavelengths have been studied as a function of temperature and applied voltage.The energy distribution of the conduction band hot electrons taking part in the electroluminescence excitation process has been shown to follow a Boltzmann function and the mean energy of the hot electrons has been found to be 0.16 eV,a value which is consistent with the measured energy conversion efficienicies.109|55|0更新时间：2020-08-11
- 摘要：The electroluminescence emission spectrum of forward-biased MIS diodes prepared on high-purity single-crystals ZnSe0.8S0.2and ZnSe0.5S0.5 have been studied over the temperature range 40-290K.At room temperature the emission consisted of two intense bands.The ZnSe0.8S0.2 MIS diode shows two bands in blue at 4460A and 4554A and the ZnSe0.6S0.5 MIS diodes shows two bands in violet at 4128A and 4276A.At the lowest temperature some structure was observed.Temperature dependence of the electroluminescence emission spectra have been investigated.The origins of two emission bands at room temperature have been discussed in terms of the point of veiw suggested by the authors[10] in ZnSe MIS diodes.112|42|0更新时间：2020-08-11
- 摘要：A method is described for calculating emission lifetimes (τ) for flash decay. The fluorescence decay of the excited state of most biopo-lymers, and biopolymer conjugates and complex, is not, in general a simple exponential, and the time scale of instrumental distortion, the flash duration, and T are comparable. Conventinal simple procedure fails. The method of moments is used to establish a means of analyzing such mono-or multi-exponential decays.The method is tested by the use of TQ-16 computer. The experimental result show that the method of moments is promising as a means of analyzing decay curves.102|57|0更新时间：2020-08-11
- 摘要：A thin film electroluminescent (EL) cell having Au/ZnSe:Mn/n-Ge structure has been fabricated by molecular beam epitaxy (MBE). The lowest threshold voltage attained is 6V. Typical driving peformance of the EL cell gives 73 fL in brightness at the DC mode operation of 12.8V and 14.7 A/cm2 and the best quantum efficiency is 4.3×10-5(at 10,8V, 3A/cm2),102|34|0更新时间：2020-08-11
- 摘要：A rather simple process for preparing BaFCl:Eu phosphor of contral-lable particle size has beend developed.Refering to the phase diagram of BaCl2-BaF2-H2O system,the matrix compound BaFCl was synthesized by "homogeneous" precipitation. BaFCl thus obtained is tiny crystallite with a mean size smaller than 0.5μm EuCl3 and KC1 were added to the BaFCl and heated in air to form the Eu2+ doped phosphor.The reaction mechanism of thermal reduction decomposition of EuCl3 in pure state and in the system of BaFCl-EuCl3 has been studied by equilibrium vapour pressure measurement and solid phase composition and structure determination.X-ray intensifying screens for diagnostic radiography made with this phosphor exhibit a purple-blue emission spectrum being enveloped by the sensitivity curve of the conventional blue sensitive film and have a high speed and good image quality.107|78|0更新时间：2020-08-11
- 摘要：The growth of single crystals RExPr1-xP5O14 with RE=La, Ce, Nd, Eu, Gd, Yb, Tm, Y (x=0.1) was investigated. The flux solution growth of crystals was achieved, having grown single crystal up to 2 cm in length.We researched on the syntheses of the material and observed the spectra of obsorption, fluorescence and infrared for Pr3+ ion. The osillator strength was calculated for Pr3+ ion in the range 22400 to 16380 cm-1.The x-ray diffraction analysis in dicated that the structure is monoclinic wich space group P21/c and the cell parameters were found to be a=3.73 A, b=9.04A, c=13.02A and β=90.5°.113|41|0更新时间：2020-08-11
- 摘要：In this report, the degradation characteristics of the InGaAsP/InP DH LED’s has been investigated at room temperature (15-35℃) in atmosphere ambient. Two type slow degradation of A and B was suggested. The characteristics of the output power-current, emission spectrum, thermal resistances and series resistance was observed. Tt is found that no change of these characteristics of the InGaAsP/InP DH LED’s undegoes after 104 hours cw operation, except slow degradation for B type the normalized output power value P/P0 decrease slightly about 10-20% at the beginning ageing test.An electroluminescence pattern was observed by means of infrared TV and germanimum photodiode was used as a detector. It is fcund fcr the slow degradation of A type there is no the EL pattern change after 104 hours cw operation, but for B type slow degradation with initial dark structure, there is no distingushing variation during EL pattern experiment after 8×103 hours cw operation.We explained the degradation mechanism of the InGaAsP/InP DH LED’s by extendng defect model.104|42|0更新时间：2020-08-11
- 摘要：GalnAsP/InP double-heterojunction material was grown by twophase LPE. Small area LEDs with output power of 1mW and emission wavelength of 1.3 μm at a forward current of 100mA were made from the wafers for fiber-optical communications. Epitaxial process and factors affecting property of the material were discussed.110|51|0更新时间：2020-08-11
- 摘要：In the fabrication of high efficiency green LED,the isolation and mesa formation have particular significance.In this work we have studied the chemical etching technique and mesa formation with alkaline K3Fe(CN)6 etchant which provides higher etching rate and a perfect surface is excellent for GaP. For GaP material and have examined the dependence of etching depth and appearance on etching time and etching temperature.We have found that the alkaline K3Fe(CN)6 etchant which providss higher etching rate and a perfect surface is excellent for GaP,108|63|0更新时间：2020-08-11
- 摘要：The npnp Ga1-xAlxAs LED with negative resistance has been prepared and applied to a new type of calling-setup in a hospital. This calling-setup appears to be superior to other types previously used. It enables the simplification of circuits and replacing relays and small lamps with the single device.103|50|0更新时间：2020-08-11
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