最新刊期
卷 3 ， 期 1 ， 1982
- 摘要：In this review we will first present a general survey of mechanisms of excitation and recombination in electroluminescence in single crystals of Ⅱ-Ⅵ compounds, followed by that in AC and DC excited electroluminescence in ZnS-type powders.103|110|0更新时间：2020-08-11
- 摘要：Good electroluminescent diodes have been fabricated from neodymium-implanted or erbium-implanted zinc selenide crystals. These diodes have an external power efficiency of 5×10-5w/w and can be operated at very low voltage and at low temperature (e.g.77K). They Show the characteristic emission spectra of Nd3+ or Er3+.96|54|0更新时间：2020-08-11
- 摘要：(100) ZnSe single-crystal film have been grown on (100) oriented substrate of GaAs by Colse-spaced epitaxial process. The experimetal conditions are: Tsub=550℃, Tsou=650℃, the gas HOW of H2-HC1 is about 0.4-0.451/min and the growth rate is about 0.25-0.3μ/h. In order to reduce the resistivity of ZnSe and dope with Mn, epitaxial wafers are treated at 700℃ in zn and MnCl2 vapour for 40-60 minutes. MS-junction luminescent diodes have been fabricated. Yellow electroluminescence has been obtained under reverse biased excitation.102|49|0更新时间：2020-08-11
- 摘要：The electroluminescence of C-ZnSe:Al has been investigated. The znSe crystal is grown at high growth rate. This new system produces self-activated emission, the peak wavelength is at 5900A and the threshold voltage is 0.8V. The luminance is 50fL at 2V and 4mA, and is 600fL at 3V and 60mA. The maximum external quantum efficiency is 10-4. The luminescence of this structure is produced by recombination of injection hole at the centre VZn-Al. Simple LEDs and display devices have been fabricated.123|117|0更新时间：2020-08-11
- 摘要：N2 laser pumped organic scintillator-PMMA system has been observed with three samples: POPOP-PMMA,B3OB-PMMA and PPC-FMMA.The characteristics of the superfluorescence spectra have been shown that the polymer PMMA can be viewed as a rigid solvent matrix. In our experiments, POPOP-PMMA is the best in emission intensity and emission stability.140|88|0更新时间：2020-08-11
- 摘要：The Yellow light-emitting diode of gallium arsenide phosophide was prepared with the tellurium doping n-type GaAs0.15P0.35:N/Gap material which was grown on gallium phosphide substrate by vapor phase epitaxy using ammonium doping arsenic vapor pressure method. The optical and electrical performances of the LED were measured. The factors w affect luminescent efficiency of the device were discussed.137|65|0更新时间：2020-08-11
- 摘要：Phosphors of (Y0.9Gd0.1)2O2S:Tb and(Gd0.9La0.1)2O2S:Tb with different Tb3+ concentrations 0.05-10mol.%have been prepared by sulfidizing the corresponding oxides. Their luminescent properties under CR rays and UV lights excitation have been investigated.It has been found that as there existed dependence of emission intensities of 5D3→7FJ and 5D4→7FJ upon terbium concentrations, so that there existed dependence of chro m aticity coordinates of these materials upon the activator's concentrations in them.99|31|0更新时间：2020-08-11
- 摘要：A model of p-AlxGa1-xAs/p-GaAs/n-GaAs solar cell has been set up based on the measurements of the minority carrier diffusion length, junction depth, Al concentration and other opto-electric parameters. Using this model the quantum efficency spectrum and other properties are calculated by computer and these results are compared with experiments. Moreover, the solar cell properties are analysised with junction depth and diffusion length.113|41|0更新时间：2020-08-11
- 摘要：The composition parameter x dependences of electrolyte electro-reflectance (EER) spectra were observed on a series of Ⅲ-Ⅴ group compound semiconductor alloy samples of GaAs1-xpx and AlxCa1-xAs."Three-point adjusting method"was adopted in the estimation-of critical point energies and its allied spin-orbit splittings Ego, △o, Eg1, △1. From the values of Ego,compositions of all GaAs1-xpx samples were obtained according to a formula given in Ref [9]. Then, empirical formula of parabolic type for all of the energies [Ego+△o](x), Eg1(x), [Eg1+△1](x) were achieved by a best fit procedure, In the circumstances of GaP(x=1), a value of △1 about 0.16eV was definitely measured. deviating appreciably from"2/3 rule" for the ratio of △1:△0.The necessity of applying a quabra-tic term correction to the linear type assumption of Ego(x), conventionally used in photovoltaic determination of the semiconductor alloy compositions,has been demonstrated.98|44|0更新时间：2020-08-11
- 摘要：Transparent conductive thin films with excellent performance have been fabricated by the electron-beam evaporation of In2O3doped with SnO2.The resistivity of these films ranges from 2.5×10-4 to 3.5×10-4Ω-cm. Its transparency is as high as 90% to the visual light. This kind of In2O3 films could replace the SnO2 films, serving as the transparent conductive layers. The main factors affecting the conductivity and transparency of In2O3 films are discussed in this paper, The technological conditions to obtain the films with good quality and reproducibility are also provided.118|35|0更新时间：2020-08-11
- 摘要：The elctro-optical characteristics of DC-EL panels under AC excitation has been improved by using inductance compensation in peripheral circuits. The brightness of the panels could be improved by a factor of three or more comparing with that without the compensation, uhder the same exciting oltages. For the same brightness level, the driving voltage of the panel with the inductance compensation could be lowered for more than 20 volts. Since the brightness of the panels varies with the excitaion frequency and the width of excitation pulss, it is possible to obtain frequency modulation or pulse-width modulation for alphanumeric or image displays.116|37|0更新时间：2020-08-11
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