最新刊期
卷 2 ， 期 3 ， 1981
- 摘要：The characteristic luminescence near 5000cm-1 in vanadium-activated Ⅱ-Ⅵ compounds is ascribed to the transition 4T2 (drde2)→4T1(dr2dε)within the V2+ ion which is in a crystal field of Td symmetry. According to the complete dia-gonalization calculation of energy matrix, the appropriate crystal-field parameters are derived as follows:B=0.4B0, C=5.0Band Dq=1.7B. This avoids the difficulty of "Td forbidden"which occurs in other models, and qualitatively exp-lains the main charaters of positions, intensities and shapes of excitation spectra of ZnS:V,CdS:V,CdSe:V and CdS:V(Cu),Furthermore, the first step correction fo-mulas of energy are derived by using the irreducible tensor method of Y.Tanabe and H.Kaminura when the symmetry is lowered from Td to C3t and the spin-orbit coupling is considered. As an example,the first step correction of CdS:V (Cu)is carried out and it is shown that the broad split of the first excitation band(8820cm-1~9500cm-1)can also be explained in this model.105|55|0更新时间：2020-08-11
- 摘要：The exciton emission spectrum of ZnSe MIS diodes in forward bias electroluminescence has been studied down to the lowest temperatures (20-30K) atwhich it is still possible to pass an appreciable current through a device. Withdiodes prepared on crystals of the highest chemical purity grown by conventional vapour phase techniques, the luminescence consisted almost entirely of the 1LO and 2LO phonon assisted replicas of the Γ3→Γ6 free exciton emission.The shapes of the two bands are discussed in terms of the semi-classical theory of Gross et al [6,7] with the result that the width asymmetry of the bands are attributed to a Maxwell-Boltzmann distribution of the excitons in an exciton band with an effective exciton temperature close to that of the lattice.98|54|0更新时间：2020-08-11
- 摘要：A simple technique of simultaneous co-evaporation has been used to form thin films of erbium-doped zinc sulphide which give good DCEL. For transitions from excited states to the 4I15/2 ground state of the Er3+ ion theoretical calculations of oscillator strengths have been compared with those determined experimentally from observations of spectral intensities of DCEL. The good agreement noted between experiment and theory gives further support for a previous finding that in rare-earth doped ZnS thin films the hot electrons exciting DCEL follow a Boltzmann distribution.103|46|0更新时间：2020-08-11
- 摘要：Using Er3+ characteristic emission, it is observed that distribution of electric field strength in thickness direction is inhomogenous in ZnS:Cu,Er,Cl DC thin film EL devices. Three high field regions and two low field regions are measured.We have measured the EL efficiencies in these regions and found that EL efficiency is higher in the high field region and lower in the low field region.The reason for formation of high field regions and relation between EL efficiency and electric field strength are discussed in this Paper.108|29|0更新时间：2020-08-11
- 摘要：A new synthetic cathodoluminophor with long Persistence, Dy3+ activated SrAl2O4 is presented in this Paper. The CL spectrum consists of three groups of discrete sharp lines which is characteristic of Dy3+ ion 4f-4f transfer appearing yellow-white in color. The CL brightness is comparable to commercial MgF2:Mn2+(P33),or about 60% that of Zn2SiO4:Mn2+,As(P39).The SrAl2O4:Dy3+ phosphor shows a decay time of more than 200ms to decrease to an intensity of 1/10 of its initial value after the removal of CR excitation of 10kV, 1μA/cm2 and the luminescence decay is nonexponential. Thermoluminescence of CR excitation shows the existence of deep traps which are responsible for the slow decay.Finally the model of luminescence decay in this phosphor is proposed according to experimental results.114|69|0更新时间：2020-08-11
- 摘要：This paper introduced a mathematical model of the phosphor particle size distribution, with focus, discussed the following three aspects:1. Demonstration of the phosphor particle size distribution.2. Solution to characteristic value of the logarithmic normal distribution.3. Convertion between parameters of the phosphor Particle number, surface and weight distribution.117|70|0更新时间：2020-08-11
- 摘要：There is a [ess absorption to the blue light when chromoticity coordinates of the color-body of yellow-component in white phosphor decreases to x=0.4599, y=0.4224. The color temperature of white phosphor doesn't change with coating density.This paper has discussed the quantitative-relation of phosphor's color tem-perature with the factors, such as, weight coating density, dispersivity and particle size etc. The formcla W-kdc has been introduced to compute the proper weight according to the differences of the particle sizes of phosphor. And indicate that increasing the dispersion and decreasing the suitable weight of phosphor will cause the results, that is,excellent screens color uniformity and higher resolving power are obtained and"yellow-centr"as been improved.109|62|0更新时间：2020-08-11
- 摘要：On Preparing ZnO:Zn Phosphor,many different methods have been reported in the literature. The mechanism of the formation of interstitial Zn, which is considered to be responsible for the performance of luminescence and n-type semiconductor, has thus been proposed in various respects. Thisstudy has placed emphasis on the sulfide method, in which three different systems in the presence of sulfur oxide, zinc sulfide and free sulfur respectively are examined on the basis of thermodynamic calculations.It is found theoretically and verified experimentally that these following changes cannot occur spontaneously in the range of 600~1300℃:ZnO+SO2=Zn+SO3 2ZnO+ZnS=SZn+SO24ZnO+S2(g)=4Zn+2SO2while the last reaction shown above may involve a decrease in free energy under the condition given below, and tends to proceed spontaneously to the right side.2ZnO+S2+O2=2Zn(g)+2SO2(or 2ZnS+O2=2ZnO+S2)It seems clear that trace O2, but not any sulfide or sulfur,has played an important role in the system.110|62|0更新时间：2020-08-11
- 摘要：At first, requirement of plasma display Panel on phosphor is descrided. Then, luminous characteristic of the low energy electron phosphor and vacuous ultraviolet phosphor and the state of their application in the devices are detailed respectively. At the end, future development and trend are looked forward to.136|54|0更新时间：2020-08-11
- Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
- Tel：0431-86176862 Email：fgxbt@126.com
- Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17
京公网安备11010802024621 - It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
- Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
0