Growth of &beta;-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template

JIAO Teng; LI Ze-ming; WANG Qian; DONG Xin; ZHANG Yuan-tao; BAI Song; ZHANG Bao-lin; DU Guo

doi:10.3788/fgxb20204103.0281

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Growth of β-Ga₂O₃ Thin Films on Ga₂O₃/GaN/Sapphire Template

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Growth of β-Ga₂O₃ Thin Films on Ga₂O₃/GaN/Sapphire Template
- Chinese Journal of Luminescence Vol. 41, Issue 3, Pages: 281-287(2020)
- 作者机构：
  
  1. 吉林大学电子科学与工程学院, 集成光电子学国家重点联合实验室,吉林长春,130012
  2. 宽禁带半导体电力电子器件国家重点实验室, 南京电子器件研究所,江苏南京,210016
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61774072,61734001,61674068
- DOI：10.3788/fgxb20204103.0281
  CLC： TP394.1;TH691.9
- Received：13 December 2019，
  
  Revised：27 December 2019，
  
  Published Online：06 January 2020，
  
  Published：05 March 2020
- 稿件说明：
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焦腾, 李赜明, 王谦等. Ga2O3/GaN/蓝宝石模板上β-Ga2O3薄膜的生长[J]. 发光学报, 2020,41(3): 281-287

JIAO Teng, LI Ze-ming, WANG Qian etc. Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template[J]. Chinese Journal of Luminescence, 2020,41(3): 281-287
焦腾, 李赜明, 王谦等. Ga2O3/GaN/蓝宝石模板上β-Ga2O3薄膜的生长[J]. 发光学报, 2020,41(3): 281-287 DOI： 10.3788/fgxb20204103.0281.

JIAO Teng, LI Ze-ming, WANG Qian etc. Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template[J]. Chinese Journal of Luminescence, 2020,41(3): 281-287 DOI： 10.3788/fgxb20204103.0281.

摘要

为获得高质量的-Ga

薄膜，将

面蓝宝石上生长的GaN薄膜进行高温氧化制成了Ga

/GaN/蓝宝石模板，进而在模板上利用金属有机化学气相沉积（MOCVD）工艺进行了-Ga

薄膜的同质外延。通过X射线衍射仪、原子力显微镜、场发射扫描电子显微镜等方法对样品的晶体结构、表面形貌等性质进行测试与分析。结果表明，该方法获得的-Ga

薄膜晶体质量受GaN薄膜氧化效果与MOCVD工艺条件等因素影响较大。通过优化实验条件，得到了质量较高的-Ga

薄膜。与蓝宝石上或GaN薄膜上异质外延得到的-Ga

薄膜相比，薄膜的晶体质量明显提高。通过对比不同样品的晶体质量、表面形貌和制备过程，发现该方法成功地将-Ga

薄膜在蓝宝石衬底或GaN/蓝宝石模板上异质外延转化为了Ga

/GaN/蓝宝石模板上的同质外延，有效地减小了-Ga

薄膜和蓝宝石、GaN之间较大的晶格失配和热失配，有利于提高-Ga

薄膜的晶体质量。

Abstract

To obtain high-quality -Ga

thin film

GaN thin film grown on

-plane sapphire is made into Ga

/GaN/sapphire template by thermal oxidation

and the -Ga

thin film is grown on the template by metal-organic chemical vapor deposition(MOCVD). The crystal structure and surface morphology of the samples are measured and analyzed by X-ray diffraction

atomic force microscope and field emission scanning electron microscope. The results show that the crystal quality of the -Ga

films is affected by GaN film oxidation effect and MOCVD process conditions greatly. By optimizing the experimental conditions

the high-quality -Ga

thin films are obtained. By comparing with the films grown on sapphire or GaN films

the crystal quality of the -Ga

films is found improved obviously. We find that this method successfully transforms the heteroepitaxy of the -Ga

film on sapphire substrate or GaN/sapphire template into the homoepitaxy of that on Ga

/GaN/sapphire template

effectively reduces the large lattice mismatch and thermal mismatch between -Ga

film

sapphire and GaN

and is beneficial to improve the crystal quality of -Ga

film.

关键词

Keywords

references

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吉林大学电子科学与工程学院集成光电子学国家重点联合实验室

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Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template

DOI：10.3788/fgxb20204103.0281

摘要

Abstract

关键词

Keywords

references

Growth of β-Ga₂O₃ Thin Films on Ga₂O₃/GaN/Sapphire Template