SHAN Xiao-ning, ZHANG Jing, HAN Jin-liang etc. Narrow-strip Single-longitudinal-mode 674 nm Laser Based on Periodic Anodes[J]. Chinese Journal of Luminescence, 2019,40(11): 1428-1433
SHAN Xiao-ning, ZHANG Jing, HAN Jin-liang etc. Narrow-strip Single-longitudinal-mode 674 nm Laser Based on Periodic Anodes[J]. Chinese Journal of Luminescence, 2019,40(11): 1428-1433 DOI: 10.3788/fgxb20194011.1428.
Narrow-strip Single-longitudinal-mode 674 nm Laser Based on Periodic Anodes
A narrow-strip single-longitudinal-mode semiconductor laser based on periodic anodes with a central wavelength of approximately 674 nm is demonstrated. The manufacturing process is simple
the periodic trenches and periodic electrode structures fabricated only using i-line lithography and conventional etching techniques
which ensures that the device operates under a gain coupling mechanism
thereby enabling the output of a single longitudinal mode laser. When the injection current is 85 mA and the test temperature is 18℃
the output power of the laser is 2.603 mW. When the injection current is 60 mA
the device maintains a single longitudinal mode operation at different test temperatures. When the room temperature is 16℃
the measured spectral linewidth of the device can reach 2.42 pm
and the side mode suppression ratio is 47 dB. Owing to the low-cost fabrication methods and good performances
our single-longitudinal-mode devices can be used for widespread practical applications.
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PASCHOTTA R,NILSSON J,TROPPER A C,et al.. Ytterbium-doped fiber amplifiers[J]. IEEE J. Quant. Electron., 1997,33(7):1049-1056.
JEON H,VERDIELL J M,ZIARI M,et al.. High-power low-divergence semiconductor lasers for GaAs-based 980-nm and InP-based 1550-nm applications[J]. IEEE J. Selected Top. Quant. Electron., 1998,3(6):1344-1350.
BURROWS E C,LIOU K Y. High resolution laser LIDAR utilising two-section distributed feedback semiconductor laser as a coherent source[J]. Electron. Lett., 1990,26(9):577-579.
TILMA B W,MANGOLD M,ZAUGG C A,et al.. Recent advances in ultrafast semiconductor disk lasers[J]. Light: Sci Appl., 2015,4:e310.
OHNO T,TAKIGUCHI M,WAKABAYASHI K,et al.. Characteristics of red-emitting broad area stripe laser diodes with zinc diffused window structures[C]. Proceedings of SPIE 7583,High-power Diode Laser Technology and Applications ⅤⅢ,San Francisco,California,United States, 2010:75830W-1-11.
MITSUYAMA H,MOTODA T,NISHIDA T,et al.. Reliability study on high-power 638 nm broad stripe laser diode[J]. Opt. Rev., 2014,21(1):43-47.
FRICKE J,BROX O,WENZEL H,et al.. Red-emitting distributed-feedback ridge-waveguide laser based on high-order surface grating[J]. Electron. Lett., 2018,54(9):582-583.
COLDREN L A,CORZINE S W,MASHANOVITCH M L. Diode Lasers and Photonic Integrated Circuits [M]. 2nd ed. Hoboken,NJ:Wiley, 2012:113-121.
SHI Y C,LI S M,GUO R J,et al.. A novel concavely apodized DFB semiconductor laser using common holographic exposure[J]. Opt. Express, 2013,21(13):16022-16028.
LI J S,WANG H,CHEN X F,et al.. Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology[J]. Opt. Express, 2009,17(7):5240-5245.
SARGENT M I,SWANTNER W,THOMAS J. Theory of a distributed feedback laser[J]. IEEE J. Quant. Electron., 1980,16(4):465-472.
LIU L,QU H W,WANG Y F,et al.. High-brightness single-mode double-tapered laser diodes with laterally coupled high-order surface grating[J]. Opt. Lett., 2014,39(11):3231-3234.
VU T N,KLEHR A,SUMPF B,et al.. Tunable 975 nm nanosecond diode-laser-based master-oscillator power-amplifier system with 16.3 W peak power and narrow spectral linewidth below 10 pm[J]. Opt. Lett., 2014,39(17):5138-5141.
Daheng College, University of Chinese Academy of Sciences
Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
BMW Brilliance Automobile Co.,Ltd.
School of Electrical and Automation Engineering, Liaoning Institute of Science and Technology