Experimental Research on Volume-Bragg-grating External Cavity Red-light Semiconductor Lasers
Device Fabrication and Physics|更新时间:2020-08-12
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Experimental Research on Volume-Bragg-grating External Cavity Red-light Semiconductor Lasers
Chinese Journal of LuminescenceVol. 40, Issue 11, Pages: 1401-1408(2019)
作者机构:
长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022
作者简介:
基金信息:
Supported by National Natural Science Foundation of China(61774024);National Key Research and Development Program(2017YFB0405100);Jilin Province Science and Technology Development Plan(20170101047JC,20170203014GX,20190302007GX)
LIU Rong-zhan, BO Bao-xue, YAO Na etc. Experimental Research on Volume-Bragg-grating External Cavity Red-light Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2019,40(11): 1401-1408
LIU Rong-zhan, BO Bao-xue, YAO Na etc. Experimental Research on Volume-Bragg-grating External Cavity Red-light Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2019,40(11): 1401-1408 DOI: 10.3788/fgxb20194011.1401.
Experimental Research on Volume-Bragg-grating External Cavity Red-light Semiconductor Lasers
Red-light external cavity semiconductor lasers are constructed by using reflective volume-Bragg-grating(VBG) as a feedback component
experimental research on the output characteristics of the device.The influence of the position of the VBG on the far field characteristics of the red-light external cavity semiconductor lasers is mainly studied. Results show that
reducing the distance between the VBG and the laser chip can improve the mode-locking effect
narrow the spectrum and improve the divergence angle of the slow-axis beam. Using a VBG with a diffraction efficiency of 20%
the output wavelength of the semiconductor lasers can be stably locked around 634 nm
the line width of the output spectral can be compressed to about 0.7 nm
and the output power can reach 1.06 W.
关键词
Keywords
references
孟雪,宁永强,张建伟,等. 面向激光显示的红光半导体激光器的研究进展[J]. 激光与光电子学进展, 2019,56(18):180001-1-12. MENG X,NING Y Q,ZHANG J W,et al.. Research progress of red semiconductor laser diodes for laser display[J]. Laser Optoelectr. Prog., 2019,56(18):180001-1-12. (in Chinese)
李义辉. 激光显示的色域扩展研究[D]. 济南:山东大学, 2012:19-27. LI Y H. Research on Gamut Expansion of Laser Display [D]. Jinan:Shandong University, 2012:19-27. (in Chinese)
赵富宝,武怀玉,杨延宁. 浅议激光显示技术及其进展[J]. 现代显示, 2013(z1):27-30. ZHAO F B,WU H Y,YANG Y N. The technology and development of laser display[J]. Adv. Disp., 2013(z1):27-30. (in Chinese)
PARK J,SONG H J,NA H M,et al.. Design of red-emitting external cavity diode laser module for high-slope efficiency and narrow bandwidth[J]. Opt. Eng., 2015,54(9):096109-1-5.
YAGI T,SHIMADA N,NISHIDA T,et al.. Highly-reliable operation of 638-nm broad stripe laser diode with high wall-plug efficiency for display applications[C]. Proceedings Volume 8640, Novel In-plane Semiconductor Lasers Ⅻ,San Francisco, 2013,8640:86400E-1-7.
KURAMOTO K,NISHIDA T,ABE S,et al.. High-power operation of AlGaInP red laser diode for display applications[C]. Proceedings Volume 9348, High-power Diode Laser Technology and Applications ⅩⅢ,San Francisco, 2015,9348:93480H-1-12.
POHL J,BUGGE F,BLUME G,et al.. Combined Mg/Zn p-type doping for AlGaInP laser diodes[J]. J. Cryst. Growth, 2015,414:215-218.
朱振,肖成峰,夏伟,等. 大功率640 nm红光半导体激光器的设计及制备[J]. 激光与光电子学进展, 2018,55(8):081403-1-5. ZHU Z,XIAO C F,XIA W,et al.. Design and fabrication of high power 640 nm red laser diodes[J]. Laser Optoelectr. Prog., 2018,55(8):081403-1-5. (in Chinese)
朱振,张新,肖成峰,等. 高可靠性瓦级660 nm半导体激光器研制[J]. 中国激光, 2018,45(5):0501002-1-5. ZHU Z,ZHANG X,XIAO C F,et al.. Fabrication of highly reliable watt-level 660 nm semiconductor lasers[J]. Chin. J. Lasers, 2018,45(5):0501002-1-5. (in Chinese)
薄报学,高欣,乔忠良, 等. 大功率体光栅外腔半导体激光器的输出特性[J]. 中国激光, 2008,35(4):501-504. BO B X,GAO X,QIAO Z L,et al.. Characteristics of high power volume-Bragg-grating external cavity semiconductor lasers[J]. Chin. J. Lasers, 2008,35(4):501-504. (in Chinese)
沈琪皓,石秀梅,陈建国. 体光栅外腔半导体激光器列阵的光谱及调谐[J]. 激光杂志, 2009,30(2):23-24. SHEN Q H,SHI X M,CHEN J G. Spectrum and wavelength tuning of laser diode array positioned inside an external cavity defined by a volume Bragg grating[J]. Laser J., 2009,30(2):23-24. (in Chinese)
ZHU H B,FAN S L,ZHAO J,et al.. Development and thermal management of kW-class high-power diode laser source based on the structure of two-stage combination[J]. IEEE Photon. J., 2019,11(3):1502510-1-10.
ZHU H B,LIN X C,ZHANG Y W,et al.. kW-class fiber-coupled diode laser source based on dense spectral multiplexing of an ultra-narrow channel spacing[J]. Opt. Express, 2018,26(19):24723-24733.
周泰斗,梁小宝,赵磊,等. 体布拉格光栅色散对衍射光束质量的影响[J]. 中国激光, 2017,44(2):0201019-1-7. ZHOU T D,LIANG X B,ZHAO L,et al.. Effect of volume Bragg gratings dispersion on diffracted beam quality[J]. Chin. J. Lasers, 2017,44(2):0201019-1-7. (in Chinese)
张雪. 体布拉格光栅外腔改善二极管激光阵列光束质量研究[D]. 北京:北京工业大学, 2009:13-14. ZHANG X. Improving Beam Quality of Diode Laser Array by Volume Bragg Grating External Cavity [D]. Beijing:Beijing University of Technology, 2009:13-14. (in Chinese)
郭长志. 半导体激光器能带结构和光增益的量子理论[M]. 北京:科学出版社, 2016. GUO C Z. The Quantum Theory of Band Structure and Light Gain of Semiconductor Lasers [M]. Beijing:Science Press, 2016. (in Chinese)
胡静. 基于体布拉格光栅横模选择特性理论研究[D]. 苏州:苏州大学, 2016:30-31. HU J. Theoretical Study of Transverse Mode Selection in Laser Resonator with Volume Bragg Gratings [D]. Suzhou:Soochow University, 2016:30-31. (in Chinese)
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