Resonant Tunneling of Holes Through &delta;-doped Be Acceptor GaAs/AlAs Multiple Quantum Wells

ZHENG Wei-min; HUANG Hai-bei; LI Su-mei; CONG Wei-yan; WANG Ai-fang; LI Bin; SONG Ying-xin

doi:10.3788/fgxb20194011.1373

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Resonant Tunneling of Holes Through δ-doped Be Acceptor GaAs/AlAs Multiple Quantum Wells

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Resonant Tunneling of Holes Through δ-doped Be Acceptor GaAs/AlAs Multiple Quantum Wells
- Chinese Journal of Luminescence Vol. 40, Issue 11, Pages: 1373-1379(2019)
- 作者机构：
  
  1. 山东大学(威海) 空间科学与物理学院, 山东威海 264209
  2. 山东大学化学与化学工程学院,山东济南,250100
  3. 山东大学(威海) 机电与信息工程学院,山东威海,264209
  4. 中国科学院上海技术物理研究所上海,200083
  5. 济南市半导体元件实验所, 山东济南 250014
- 作者简介：
- 基金信息：
  
  Supported by Shandong Province Natural Science Foundation(ZR2017MF018);National Natural Science Foundation of China(61675223)
- DOI：10.3788/fgxb20194011.1373
  CLC： O472.4
- Received：05 June 2019，
  
  Revised：29 July 2019，
  
  Published Online：19 August 2019，
  
  Published：05 November 2019
- 稿件说明：
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郑卫民, 黄海北, 李素梅等. δ-掺杂Be受主GaAs/AlAs多量子阱的空穴共振隧穿[J]. 发光学报, 2019,40(11): 1373-1379

ZHENG Wei-min, HUANG Hai-bei, LI Su-mei etc. Resonant Tunneling of Holes Through δ-doped Be Acceptor GaAs/AlAs Multiple Quantum Wells[J]. Chinese Journal of Luminescence, 2019,40(11): 1373-1379
郑卫民, 黄海北, 李素梅等. δ-掺杂Be受主GaAs/AlAs多量子阱的空穴共振隧穿[J]. 发光学报, 2019,40(11): 1373-1379 DOI： 10.3788/fgxb20194011.1373.

ZHENG Wei-min, HUANG Hai-bei, LI Su-mei etc. Resonant Tunneling of Holes Through δ-doped Be Acceptor GaAs/AlAs Multiple Quantum Wells[J]. Chinese Journal of Luminescence, 2019,40(11): 1373-1379 DOI： 10.3788/fgxb20194011.1373.

摘要

三个具有不同量子阱宽度的GaAs/AlAs多量子阱结构样品通过分子束外延生长设备生长在半绝缘的（100） p-型GaAs衬底上，并且在量子阱层结构的生长过程中，在GaAs阱层中央进行了Be受主的-掺杂。基于这3个结构样品，通过光刻技术和半导体加工工艺制备了相应的两端器件。在4~200 K的温度范围内，我们分别测量了器件的电流-电压特征曲线，清楚地观察到了重、轻空穴通过-掺杂Be受主GaAs/AlAs多量子阱结构的共振隧穿现象。发现随着GaAs量子阱层宽的逐渐减小，轻空穴的共振隧穿峰向着高电压方向移动，这个结果和通过AlAs/GaAs/AlAs双势垒结构模型计算的结果是一致的。然而，随着测量温度的进一步升高，两个轻空穴共振峰都朝着低电压的方向移动，并且在150 K温度下，其中一个共振遂穿峰表现为一种振动模式。

Abstract

Three samples of GaAs/AlAs multiple quantum wells with different quantum-well widths are grown on semi-insulating (100) p-type GaAs substrates by the molecular beam epitaxy with Be acceptors -doped at the center of GaAs well layers. Three corresponding two-terminal devices are fabricated by photolithographic and semiconductor manufacturing technologies based on these samples. The device current-voltage characteristics are measured at temperatures in a range of 4-200 K. The resonant tunneling of heavy- and light-holes through Be -doped GaAs/AlAs multiple quantum wells are clearly observed. It is found that the position of resonant tunneling for light-heavy holes shifts to higher voltage with decreasing quantum-well sizes

which is in good agreement with the results calculated by the AlAs/GaAs/AlAs double-barrier theoretical model. However

as the measured temperatures increase

two peaks of resonant tunneling of light-holes move toward lower voltage

while one of the resonant peaks behaves as an oscillating mode at 150 K.

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references

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Related Author

SONG Ying-xin

LI Bin

WANG Ai-fang

CONG Wei-yan

LI Su-mei

HUANG Hai-bei

ZHENG Wei-min

MIAO Rui-xia

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Resonant Tunneling of Holes Through δ-doped Be Acceptor GaAs/AlAs Multiple Quantum Wells

DOI：10.3788/fgxb20194011.1373

摘要

Abstract

关键词

Keywords

references