Thermally Accelerated Aging Test of Conduction-cooled-packaged High Power Diode Laser Bar in CW Mode

NIE Zhi-qiang; WANG Ming-pei; SUN Yu-bo; LI Xiao-ning; WU Di

doi:10.3788/fgxb20194009.1136

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Thermally Accelerated Aging Test of Conduction-cooled-packaged High Power Diode Laser Bar in CW Mode

Device Fabrication and Physics | 更新时间：2020-08-12

- Thermally Accelerated Aging Test of Conduction-cooled-packaged High Power Diode Laser Bar in CW Mode
- Chinese Journal of Luminescence Vol. 40, Issue 9, Pages: 1136-1145(2019)
- 作者机构：
  
  1. 中国科学院大学, 北京 100049
  2. 中国科学院西安光学精密机械研究所瞬态光学与光子技术重点实验室, 陕西西安 710119
  3. 西安炬光科技股份有限公司, 陕西西安 710077
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61334010)
- DOI：10.3788/fgxb20194009.1136
  CLC： TN248.4
- Received：18 December 2018，
  
  Revised：04 April 2019，
  
  Published Online：16 April 2019，
  
  Published：05 September 2019
- 稿件说明：
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聂志强, 王明培, 孙玉博等. 传导冷却高功率半导体激光器单巴器件CW工作模式下的热加速寿命试验[J]. 发光学报, 2019,40(9): 1136-1145

NIE Zhi-qiang, WANG Ming-pei, SUN Yu-bo etc. Thermally Accelerated Aging Test of Conduction-cooled-packaged High Power Diode Laser Bar in CW Mode[J]. Chinese Journal of Luminescence, 2019,40(9): 1136-1145
聂志强, 王明培, 孙玉博等. 传导冷却高功率半导体激光器单巴器件CW工作模式下的热加速寿命试验[J]. 发光学报, 2019,40(9): 1136-1145 DOI： 10.3788/fgxb20194009.1136.

NIE Zhi-qiang, WANG Ming-pei, SUN Yu-bo etc. Thermally Accelerated Aging Test of Conduction-cooled-packaged High Power Diode Laser Bar in CW Mode[J]. Chinese Journal of Luminescence, 2019,40(9): 1136-1145 DOI： 10.3788/fgxb20194009.1136.

摘要

可靠性是高功率半导体激光器（HLD）的一个重要性能。热加速寿命试验是HLD寿命评价和可靠性分析的重要技术。在本文中，我们在高温测试平台上对铟焊料封装的18个中心波长为808 nm的传导冷却型HLD单巴器件在恒定电流60 A条件下进行55，65，80℃ 3组热沉温度下的热加速寿命试验。根据器件输出功率在加速寿命测试期间的降低趋势，得到该批HLD器件的寿命分别为1 022，620，298 h，再根据Arrhenius公式得到该器件的激活能为0.565 41 eV，从而外推得到器件在室温下的寿命为5 762 h。可见55℃下器件寿命加速了5倍，而在65℃下寿命加速了8.5倍，80℃下寿命加速17倍。此外，我们还分析了器件热加速寿命试验后的性能。

Abstract

In the applications of high power semiconductor laser(HLD)

the reliability is the important performance. Therefore lifetime evaluation and reliability analysis technologies become the key of practical application and industrialization of HLD. The thermally accelerated aging test is able to monitor the failure process

reveal defects and weak links of device design process

materials and components

and provides guidance for optimizing the chip and package structure. It is an important technology of lifetime evaluation and reliability analysis. In this work

a thermally accelerated aging test of eighteen conduction-cooled-packaged 60 W 808 nm high power diode laser arrays packaged by indium solder in CW mode at constant current 60 A under the temperature 55

80℃ of heat sink has been reported. According to the decreasing trend of the output power during the thermal acceleated aging test

the lifetime 1 022

620

298 h have been obtained

respectively. Based on the Arrhenius formula

the activation energy of the device is 0.565 41 eV

and the lifetime of the device is 5 762 h at room temperature. It can be seen that the lifetime of the device accelerates by 5 times at 55℃

8.5 times at 65℃ and 17 times at 80℃. In addition

we show and analyze the performance of the device after accelerated aging test.

关键词

Keywords

references

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