808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography

WANG Yue; WANG Yong; LI Zhan-guo; YOU Ming-hui

doi:10.3788/fgxb20194009.1130

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808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography

Device Fabrication and Physics | 更新时间：2020-08-12

- 808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography
- Chinese Journal of Luminescence Vol. 40, Issue 9, Pages: 1130-1135(2019)
- 作者机构：
  
  1. 长春理工大学理学院, 吉林长春 130022
  2. 吉林农业大学信息技术学院, 吉林长春 130018
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61774025);Jilin Provincial Science and Technology Department(20140520139JH,20170520157JH,20152420170414016GH,2015174)
- DOI：10.3788/fgxb20194009.1130
  CLC： TN248.4
- Received：13 February 2019，
  
  Revised：22 March 2019，
  
  Published Online：26 March 2019，
  
  Published：05 September 2019
- 稿件说明：
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王岳, 王勇, 李占国等. 全息光刻制备808 nm腔面光栅半导体激光器[J]. 发光学报, 2019,40(9): 1130-1135

WANG Yue, WANG Yong, LI Zhan-guo etc. 808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography[J]. Chinese Journal of Luminescence, 2019,40(9): 1130-1135
王岳, 王勇, 李占国等. 全息光刻制备808 nm腔面光栅半导体激光器[J]. 发光学报, 2019,40(9): 1130-1135 DOI： 10.3788/fgxb20194009.1130.

WANG Yue, WANG Yong, LI Zhan-guo etc. 808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography[J]. Chinese Journal of Luminescence, 2019,40(9): 1130-1135 DOI： 10.3788/fgxb20194009.1130.

摘要

利用全息光刻开展了808 nm腔面光栅半导体激光器腔面膜系制备，制备与表征了单管芯器件，单管芯器件条宽100 m，腔长2 mm，输出中心波长807.32 nm，光谱半宽为0.36 nm，15~45℃温度范围内波长随温度的漂移系数为0.072 nm/℃，室温单管芯最大连续输出功率达到2.8 W，阈值电流为0.49 A，斜率效率为1.05 W/A。测试结果表明808 nm腔面光栅半导体激光器实现了单纵模输出。

Abstract

The laser holography photolithography technology was designed

the optical path of holography lithography system was calculated and built based on the designed parameters of cavity grating

and the holography lithography conditions were optimized to fabricate the mask patterns of cavity grating. Based on the design of facet coating films

the facet coating process was investigated by precisely controlling the thickness and uniformity of films to realize the transmissivity

reflectivity

and bandwidth satisfied with the single longitudinal mode output of 808 nm facet grating LD. The single chip device of 808 nm facet grating LD was fabricated and characterized

with width of 100 m and length of 2 mm. High performance was achieved with central wavelength of 807.32 nm

FWHM of 0.36 nm

wavelength drift coefficient with temperature variation(15~45℃) of 0.072 nm/℃

maximum output power of 2.8 W

threshold of 0.49 A

and slop efficient of 1.05 W/A.

关键词

Keywords

references

WENZEL H,KLEHR A,BRAUN M,et al.. Design and realization of high-power DFB lasers[C]. Proceedings of SPIE 5594,Physics and Applications of Optoelectronic Devices,Philadelphia,Pennsylvania,United States, 2004:110-123.

VOLODIN B L,DOLGY S V,MELNIK E D,et al.. Wavelength stabilization and spectrum narrowing of high-power multimode laser diodes and arrays by use of volume Bragg gratings[J]. Opt. Lett., 2004,29(16):1891-1893.

KLEHR A,BUGGE F,ERBERT G,et al.. High power broad area 808 nm DFB lasers for pumping solid state lasers[C]. Proceedings of SPIE 6133,Novel In-plane Semiconductor Lasers V,San Jose,California,United States, 2006:96-105.

KUDO K,YASHIKI K,SASAKI T,et al.. 1.55-m wavelength-selectable microarray DFB-LD's with monolithically integrated MMI combiner,SOA,and EA-modulator[J]. IEEE Photonics Technol. Lett., 2000,12(3):242-244.

STREIFER W,SCIFRES D,BURNHAM R. Coupling coefficients for distributed feedback single-and double-heterostructure diode lasers[J]. IEEE J. Quantum Electron., 1975,11(11):867-873.

刘丹丹,王勇,叶镇,等. 全息光刻制备808 nm分布反馈半导体激光器的光栅[J]. 中国激光, 2015,42(2):0202008-1-5. LIU D D,WANG Y,YE Z,et al.. Grating fabrication of 808 nm distributed feedback semiconductor laser by holographic photolithography[J]. Chin. J. Lasers, 2015,42(2):0202008-1-5. (in Chinese)

叶镇,王勇,高占琦,等. 基于全息光刻系统制备528 nm周期孔阵图形[J]. 中国激光, 2015,42(8):0809003-1-5. YE Z,WANG Y,GAO Z Q,et al.. Preparation of 528 nm periodic hole array based on holographic lithography system[J]. Chin. J. Lasers, 2015,42(8):0809003-1-5. (in Chinese)

KOGELNIK H,SHANK C V. Coupled-wave theory of distributed feedback lasers[J]. J. Appl. Phys.,1972,43(5):2327-2335.

GOUREVITCH A,VENUS G,SMIRNOV V,et al.. Efficient pumping of Rb vapor by high-power volume Bragg diode laser[J]. Opt. Lett., 2007,32(17):2611-2613.

辛国锋,程灿,瞿荣辉,等. 体布拉格光栅外腔半导体激光器光谱特性研究[J]. 光学学报, 2007,27(10):1821-1826. XIN G F,CHENG C,QU R H,et al.. Study of spectral characteristics of external-cavity semiconductor laser a volume Bragg grating[J]. Acta Opt. Sinica, 2007,27(10):1821-1826. (in Chinese)

叶淑娟,秦莉,戚晓东,等. 二阶光栅分布反馈半导体激光器的出光特性[J]. 中国激光, 2010,37(9):2371-2375. YE S J,QIN L,QI X D,et al.. Emission characteristics of second-order distributed feedback semiconductor lasers[J]. Chin. J. Lasers, 2010,37(9):2371-2375. (in Chinese)

仕均秀,秦莉,叶淑娟,等. 具有表面二阶金属光栅的927 nm分布反馈半导体激光器的研制[J]. 光电子激光, 2011,22(10):1488-1491. SHI J X,QIN L,YE S J,et al.. A 927 nm distributed feedback laser with surface second-order metal grating[J]. J. Optoelectron. Laser, 2011,22(10):1488-1491. (in Chinese)

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