Radiation Effects of InGaAs Single Junction Solar Cell by High Fluence 1 MeV Electron

doi:10.3788/fgxb20194009.1115

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Radiation Effects of InGaAs Single Junction Solar Cell by High Fluence 1 MeV Electron

Device Fabrication and Physics | 更新时间：2020-08-12

- Radiation Effects of InGaAs Single Junction Solar Cell by High Fluence 1 MeV Electron
- Chinese Journal of Luminescence Vol. 40, Issue 9, Pages: 1115-1122(2019)
- 作者机构：
  
  1. 中国科学院特殊环境功能材料与器件重点实验室, 新疆电子信息材料与器件重点实验室, 中国科学院新疆理化技术研究所, 新疆乌鲁木齐 830011
  2. 中国科学院大学, 北京 100049
  3. 新疆大学物理科学与技术学院, 新疆乌鲁木齐 830046
  4. 中国科学院苏州纳米技术与纳米仿生研究所, 江苏苏州 215123
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20194009.1115
  CLC： O475;TN304.2+3
- Received：18 January 2019，
  
  Revised：18 March 2019，
  
  Published Online：19 March 2019，
  
  Published：05 September 2019
- 稿件说明：
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慎小宝, 李豫东, 玛丽娅·黑尼等. 高注量1 MeV电子辐照下InGaAs单结太阳电池退化规律与机制[J]. 发光学报, 2019,40(9): 1115-1122

SHEN Xiao-bao, LI Yu-dong, Maliya HEINI etc. Radiation Effects of InGaAs Single Junction Solar Cell by High Fluence 1 MeV Electron[J]. Chinese Journal of Luminescence, 2019,40(9): 1115-1122
慎小宝, 李豫东, 玛丽娅·黑尼等. 高注量1 MeV电子辐照下InGaAs单结太阳电池退化规律与机制[J]. 发光学报, 2019,40(9): 1115-1122 DOI： 10.3788/fgxb20194009.1115.

SHEN Xiao-bao, LI Yu-dong, Maliya HEINI etc. Radiation Effects of InGaAs Single Junction Solar Cell by High Fluence 1 MeV Electron[J]. Chinese Journal of Luminescence, 2019,40(9): 1115-1122 DOI： 10.3788/fgxb20194009.1115.

摘要

为研究键合四结太阳电池中In

0.53

0.47

As子电池在高注量电子辐照下的性能退化规律与机制，对In

0.53

0.47

As单结太阳电池进行了高注量1 MeV电子辐照试验，并结合等效位移损伤剂量理论和数值拟合方法对电池性能的退化进行了分析讨论。结果表明，在1 MeV电子辐照下，非电离能损（NIEL）值在电池活性区内随着电子入射深度的增加不断增大；开路电压

、短路电流

等重要

I-V

特性参数随着辐照注量的增加均发生了不同程度的退化，注量达到610

e/cm

时，电池光电转化效率为零，电池失效。光谱响应方面，注量小于410

e/cm

时，长波区域退化程度明显比短波区域严重；注量大于410

e/cm

时，长波区域退化程度与短波区域基本相同。辐照位移损伤引起的光生少数载流子扩散长度减小和载流子去除效应是导致电池性能退化的主要原因。

Abstract

In this paper

the radiation effects of In

0.53

0.47

As solar cell grown by MBE method irradiated by 1 MeV electron with high fluence irradiation have been studied. The degradation properties of cell parameters have been analyzed by Mulassis simulation result and the method of

I-V

curve mathematically fitting. The results show that the value of Non-ionizing energy loss (NIEL) increases with the increase of electron incident depth in the active region of solar cell under electron irradiation. The electrical parameters of In

0.53

0.47

As solar cell

max

and FF

degraded in different scale with the increase of fluence. When the fluence reaches 610

e/cm

the photoelectric conversion efficiency of the solar cell is zero

and the performance of the cell is invalid. For spectral response

when the fluence is less than 410

e/cm

the degradation of long-wave region is more serious than that of short-wave region. When the fluence is greater than 410

e/cm

the degree of degradation of the long-wave region is substantially the same as that of the short-wave region. The decrease of minority carrier diffusion length and carrier removal effect caused by displacement damage are the main reasons for degradation of solar cell performance.

关键词

Keywords

references

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