High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer

YU Hao; ZHENG Chang-da; DING Jie; MO Chun-lan; PAN Shuan; LIU Jun-lin; JIANG Feng-yi

doi:10.3788/fgxb20194009.1108

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High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer

Device Fabrication and Physics | 更新时间：2020-08-12

- High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer
- Chinese Journal of Luminescence Vol. 40, Issue 9, Pages: 1108-1114(2019)
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心, 江西南昌 330096
- 作者简介：
- 基金信息：
  
  Supported by National Key Research and Development Program of China(2016YFB0400600,2016YFB0400601);State Key Program of National Natural Science Foundation of China(61334001);Development Program of Jiangxi Province(20165ABC28007, 20182ABC28003)
- DOI：10.3788/fgxb20194009.1108
  CLC： 0484.4;O482.31
- Received：28 February 2019，
  
  Revised：02 April 2019，
  
  Published Online：14 March 2019，
  
  Published：05 September 2019
- 稿件说明：
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余浩, 郑畅达, 丁杰等. InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响[J]. 发光学报, 2019,40(9): 1108-1114

YU Hao, ZHENG Chang-da, DING Jie etc. High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer[J]. Chinese Journal of Luminescence, 2019,40(9): 1108-1114
余浩, 郑畅达, 丁杰等. InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响[J]. 发光学报, 2019,40(9): 1108-1114 DOI： 10.3788/fgxb20194009.1108.

YU Hao, ZHENG Chang-da, DING Jie etc. High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer[J]. Chinese Journal of Luminescence, 2019,40(9): 1108-1114 DOI： 10.3788/fgxb20194009.1108.

摘要

基于含有V坑结构的Si（111）衬底InGaN/GaN绿光LED，我们在传统p-AlGaN电子阻挡层之后优化生长一层25 nm的低掺镁p-AlGaN插入层，并获得明显的效率提升。在35 A/cm

的电流密度下，主波长为520 nm的LED外量子效率和光功率分别达到43.6%和362.3 mW，这是截至目前报道的最高记录。通过分析表明，其潜在的物理机制归结于p-AlGaN插入层能够提高空穴从V坑注入的效率。本文提供了一种有效提升发光效率的方法，尤其适合于含有V坑结构的InGaN/GaN LED。

Abstract

Significantly improved external quantum efficiency was achieved by growing an additional optimized 25 nm low-doped p-AlGaN interlayer(IL) after the conventional p-AlGaN electron blocking layer for InGaN/GaN green LEDs with V-pits on Si(111) substrate. At 35 A/cm

current density

external quantum efficiency(EQE) and output power reach up to 43.6% and 362.3 mW with the dominant wavelength of 520 nm. This is a new record for green InGaN-based LEDs. The underlying physical mechanism is attributed to the enhanced holes injection efficiency

via

V-shaped pits assisted by the optimized p-AlGaN interlayer. This paper provides an effective approach to improve efficiency especially suitable for those InGaN/GaN LED with V-shape pits.

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Keywords

references

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