Dependence of Internal Quantum Efficiency of GaN-based Yellow LED with Si Substrate on Electron Blocking Layer with Variable Al Composition

HU Yao-wen; GAO Jiang-dong; QUAN Zhi-jue; ZHANG Jan-li; PAN Shuan; LIU Jun-lin; JIANG Feng-yi

doi:10.3788/fgxb20194009.1102

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Dependence of Internal Quantum Efficiency of GaN-based Yellow LED with Si Substrate on Electron Blocking Layer with Variable Al Composition

Device Fabrication and Physics | 更新时间：2020-08-12

- Dependence of Internal Quantum Efficiency of GaN-based Yellow LED with Si Substrate on Electron Blocking Layer with Variable Al Composition
- Chinese Journal of Luminescence Vol. 40, Issue 9, Pages: 1102-1107(2019)
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心, 江西南昌 330096
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20194009.1102
  CLC： TP394.1;TH691.9
- Received：06 March 2019，
  
  Revised：09 April 2019，
  
  Published Online：16 April 2019，
  
  Published：05 September 2019
- 稿件说明：
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胡耀文, 高江东, 全知觉等. 电子阻挡层Al组分对Si衬底GaN基黄光LED内量子效率的影响[J]. 发光学报, 2019,40(9): 1102-1107

HU Yao-wen, GAO Jiang-dong, QUAN Zhi-jue etc. Dependence of Internal Quantum Efficiency of GaN-based Yellow LED with Si Substrate on Electron Blocking Layer with Variable Al Composition[J]. Chinese Journal of Luminescence, 2019,40(9): 1102-1107
胡耀文, 高江东, 全知觉等. 电子阻挡层Al组分对Si衬底GaN基黄光LED内量子效率的影响[J]. 发光学报, 2019,40(9): 1102-1107 DOI： 10.3788/fgxb20194009.1102.

HU Yao-wen, GAO Jiang-dong, QUAN Zhi-jue etc. Dependence of Internal Quantum Efficiency of GaN-based Yellow LED with Si Substrate on Electron Blocking Layer with Variable Al Composition[J]. Chinese Journal of Luminescence, 2019,40(9): 1102-1107 DOI： 10.3788/fgxb20194009.1102.

摘要

为了探究具有双层电子阻挡层设计的GaN基黄光LED中首层电子阻挡层（EBL-1）Al组分对内量子效率的影响以及其中载流子注入的主要物理机制，首先使用硅衬底GaN基黄光LED外延与芯片工艺，在外延过程中通过控制三甲基铝（TMAl）流量，分别获得EBL-1含有Al组分约20%、50%、80%的硅衬底GaN基黄光LED；随后使用半导体仿真软件Silvaco Atlas对这3种样品的实际测试内量子效率曲线进行拟合。结果表明，EBL-1中Al组分对内量子效率的影响主要体现在两方面:一是EBL-1的Al组分越高越有利于空穴从V形坑侧壁注入到多量子阱有源区；二是EBL-1中过高的Al组分会降低p型GaN晶体质量，导致空穴浓度下降；综合表现为Al组分约50%的EBL-1在这种双层电子阻挡层的设计下最有利于提高硅衬底GaN基黄光LED的内量子效率。

Abstract

This study was to investigate the dependence of internal quantum efficiency of GaN-based yellow light-emitting diodes(LEDs) with Si substrate on the Al composition of first electron blocking layer(EBL-1) in dual electron blocking layer design and the main physical mechanism of carrier injection. First

three samples were prepared by the technology of GaN-based yellow LEDs on silicon substrates with different flows of trimethyl aluminum(TMAl) during epitaxy. As a result

the Al composition in EBL-1 of the samples was about 20%

50% and 80%

respectively. Then

the actual tested internal quantum efficiency curves of these three samples were fitted by the semiconductor simulation software Silvaco Atlas. The results show that EBL-1 in dual electron blocking layer design has two main influences on the internal quantum efficiency. One is that EBL-1 with a higher Al composition allows more holes to be injected from the sidewall of the V-shaped pits into the multiple quantum wells

and the other is that excessive aluminum composition reduces the quality of p-type GaN layers

resulting in a decrease in the effective concentration of holes. As a comprehensive performance

the EBL-1 with about 50% Al composition is the most benefit in dual electron blocking layer design to the internal quantum efficiency of GaN-based yellow LEDs.

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