Photoelectric Properties of N Doped MgZnO Thin Films

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Photoelectric Properties of N Doped MgZnO Thin Films

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Photoelectric Properties of N Doped MgZnO Thin Films
- Chinese Journal of Luminescence Vol. 40, Issue 8, Pages: 956-960(2019)
- 作者机构：
  
  1. 吉林大学物理学院,吉林长春,130021
  2. 中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春,130033
  3. 东北石油大学电子科学学院,黑龙江大庆,163318
- 作者简介：
- 基金信息：
  
  Supported by Research Start-up Fund of Northeast Petroleum University(rc201736);Yo
- DOI：10.3788/fgxb20194008.0956
  CLC： 484.4
- Received：07 September 2018，
  
  Revised：24 October 2018，
  
  Published Online：08 November 2018，
  
  Published：05 August 2019
- 稿件说明：
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赵鹏程, 张振中, 姚斌等. N掺杂MgZnO薄膜的光电性质[J]. 发光学报, 2019,40(8): 956-960

ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin etc. Photoelectric Properties of N Doped MgZnO Thin Films[J]. Chinese Journal of Luminescence, 2019,40(8): 956-960
赵鹏程, 张振中, 姚斌等. N掺杂MgZnO薄膜的光电性质[J]. 发光学报, 2019,40(8): 956-960 DOI： 10.3788/fgxb20194008.0956.

ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin etc. Photoelectric Properties of N Doped MgZnO Thin Films[J]. Chinese Journal of Luminescence, 2019,40(8): 956-960 DOI： 10.3788/fgxb20194008.0956.

摘要

ZnO是优异的紫外发光和激光材料，氮被认为是p型ZnO和MgZnO的理想受主掺杂剂，但在较低生长温度下氮的掺入会显著破坏晶格完整性，使氧化锌的载流子迁移率进一步下降。为了研究N的掺入对MgZnO薄膜的影响，利用分子束外延设备在蓝宝石衬底上生长了N掺杂的ZnO和MgZnO薄膜。实验结果表明，在其他条件完全相同的情况下，当Mg源温度为245℃和255℃时，载流子迁移率会显著提高，这一现象被归结为Mg-N成键抑制了氧位上N-N对的形成，缓解了晶格的扭曲。同时当Mg源温度为275℃时，能够使N掺杂ZnO薄膜中的施主浓度降低一个量级，有利于实现p型掺杂。

Abstract

ZnO is an excellent UV light-emitting and lasing materials. Nitrogen is considered to be the ideal acceptor dopant for p-type ZnO and MgZnO. However

the lattice integrity of the nitrogen-doped samples grown at the lower growth temperature is remarkably influenced

which results in a further decrease in the carrier mobility of the zinc oxide. In order to study the effect of N doped MgZnO films

N-doped ZnO and MgZnO thin films were grown on sapphire substrate by molecular beam epitaxy. Comparing the difference between N doped MgZnO and ZnO

the experimental results show that the carrier mobility increased significantly when the Mg source temperature was 245℃ and 255℃

which is attributed to the fact that Mg-N bonding alleviates the formation of N-N pairs on the oxygen sites and relieves the lattice distortion. At the same time

the donor concentration in N-doped ZnO thin films can be reduced by one order of magnitude when the Mg source temperature is 275℃

which is advantageous for p-type doping.

关键词

Keywords

references

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