Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs

HAN Jun; ZHAO Jia-hao; ZHAO Jie; XING Yan-hui; CAO Xu; FU Kai; SONG Liang; DENG Xu-guang; ZH

doi:10.3788/fgxb20194007.0915

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Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs

Device Fabrication and Physics | 更新时间：2020-08-12

- Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs
- Chinese Journal of Luminescence Vol. 40, Issue 7, Pages: 915-921(2019)
- 作者机构：
  
  1. 北京工业大学信息学部光电子技术省部共建教育部重点实验室北京,100124
  2. 中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州,215123
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61204011,11204009,61574011
- DOI：10.3788/fgxb20194007.0915
  CLC： TN386.2
- Received：20 August 2018，
  
  Revised：17 October 2018，
  
  Published Online：23 April 2019，
  
  Published：05 July 2019
- 稿件说明：
移动端阅览
韩军, 赵佳豪, 赵杰等. 界面处理对AlGaN/GaN MIS-HEMTs器件动态特性的影响[J]. 发光学报, 2019,40(7): 915-921

HAN Jun, ZHAO Jia-hao, ZHAO Jie etc. Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs[J]. Chinese Journal of Luminescence, 2019,40(7): 915-921
韩军, 赵佳豪, 赵杰等. 界面处理对AlGaN/GaN MIS-HEMTs器件动态特性的影响[J]. 发光学报, 2019,40(7): 915-921 DOI： 10.3788/fgxb20194007.0915.

HAN Jun, ZHAO Jia-hao, ZHAO Jie etc. Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs[J]. Chinese Journal of Luminescence, 2019,40(7): 915-921 DOI： 10.3788/fgxb20194007.0915.

摘要

研究不同界面处理对AlGaN/GaN金属-绝缘层-半导体（MIS）结构的高电子迁移率晶体管（HEMT）器件性能的影响。采用N

和NH

等离子体对器件界面预处理，实验结果表明，N

等离子体预处理能够减小器件的电流崩塌，通过对N

等离子体预处理的时间优化，发现预处理时间10 min能够较好地提高器件的动态特性，30 min时动态性能下降。进一步引入AlN作为栅介质插入层并经过高温热退火后能够有效提高器件的动态性能，将器件的阈值回滞从411 mV减小至111 mV，动态测试表明，在900 V关态应力下，器件的电流崩塌因子从42.04减小至4.76。

Abstract

The effects of different kinds of interface treatment on the characteristic of AlGaN/GaN MIS-HEMTs were studied in this paper. N

and NH

plasma pretreatment were used to improve the interface quality. The results show that N

plasma pretreatment could reduce the current collapse of devices. By optimizing the time of N

plasma pretreatment

it was found that the dynamic characteristic of devices with 10 min the pretreatment was improved

while that of 30 min was degraded. As a gate dielectric intercalation layer

the annealed AlN interlayer can effectively improve the dynamic characteristic of the device. The

hysteresis was decreased from 411 mV to 111 mV

and the device current collapse factor was reduced from 42.04 to 4.76 after under OFF-state

stress of 900.

关键词

Keywords

references

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