FAN Jia-jie, CAO Jian-wu, LIU Jie etc. Thermal Stability and Reliability Analysis of Ultraviolet Light-emitting Diode Packages[J]. Chinese Journal of Luminescence, 2019,40(7): 871-878
FAN Jia-jie, CAO Jian-wu, LIU Jie etc. Thermal Stability and Reliability Analysis of Ultraviolet Light-emitting Diode Packages[J]. Chinese Journal of Luminescence, 2019,40(7): 871-878 DOI: 10.3788/fgxb20194007.0871.
Thermal Stability and Reliability Analysis of Ultraviolet Light-emitting Diode Packages
ultraviolet light-emitting diode(UV LED) packages have been widely applied in many beyond-lighting areas
including healthcare
disinfect
environmental protection and sensing. By using both simulations and experiments
this paper investigates the thermal stabilities and high temperature ageing reliability of near UV LED devices with three different packaging structures. The results indicate that
the radiation power and forward voltage of all samples show a downward trend with the increase of substrate temperature
but the downward trend of UV LED with flip-chip packaging structure is significantly less than that of wire bonding UV LEDs; the reliability test under the 55℃ and constant rated current condition shows that the luminous flux
radiation power and color coordinate of flip-chip type UV LEDs are relatively stable than those of wire-bonding type UV LEDs. Generally
this study can conclude that the flip-chip packaging structure with lower thermal resistance
small size and long life can improve the optical and thermal stabilities and reliability of UV LEDs.
关键词
Keywords
references
PLOCH N L,EINFELDT S,FRENTRUP M, et al.. Investigation of the temperature dependent efficiency droop in UV LEDs[J]. Semicond. Sci. Technol., 2013,28(12):125021-1-4.
KUO Y K,CHEN Y H,CHANG J Y, et al.. Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes[J]. Appl. Phys. Lett., 2012,100(4):043513-1-3.
HIRAYAMA H,KINOSHITA A,HIRATA A, et al.. Growth and optical properties of quaternary InAlGaN for 300 nm band UV-emitting devices[J]. Phys. Status Solidi A, 2001,188(1):83-89.
丁天平,郭伟玲,崔碧峰,等. 温度对功率LED光谱特性的影响[J]. 光谱学与光谱分析, 2011,31(6):1450-1453. DING T P,GUO W L,CUI B F, et al.. The effect of temperature on the PL spectra of high power LED[J]. Spectrosc.Spectr. Anal., 2011,31(6):1450-1453. (in Chinese)
LEE S H,GUAN X Y,JEON S K, et al.. Temperature-dependent optical,spectral,and thermal characteristics of InGaN/GaN near-ultraviolet light-emitting diodes[J]. Phys. Status Solidi A, 2016,213(1):46-51.
吴艳艳,冯士维,乔彦斌,等. 电流拥挤效应与LED器件可靠性分析[J]. 发光学报, 2013,34(8):1051-1056. WU Y Y,FENG S W,QIAO Y B, et al.. Study of current crowding effect and reliability of LED devices[J]. Chin. J. Lumin., 2013,34(8):1051-1056. (in Chinese)
CAO X A,LEBOEUF S F. Current and temperature dependent characteristics of deep-ultraviolet light-emitting diodes[J]. IEEE Trans. Electron Devices, 2007,54(12):3414-3417.
邹水平,吴柏禧,万珍平,等. 电-热应力对GaN基白光LED可靠性的影响[J]. 发光学报, 2016,37(1):124-129. ZOU S P,WU B X,WAN Z P, et al.. Effect of current-temperature stress on the reliability of GaN LED[J]. Chin. J. Lumin., 2016,37(1):124-129. (in Chinese)
王军喜,闫建昌,郭亚楠,等. 氮化物深紫外LED研究新进展[J]. 中国科学:物理学力学天文学, 2015,45(6):067303-1-20. WANG J X,YAN J C,GUO Y N, et al.. Recent progress of research on Ⅲ-nitride deep ultraviolet light-emitting diode[J]. Chin. Sci. Phys. Mech. Astron., 2015,45(6):067303-1-20. (in Chinese)
李杨,董素素,王艺燃,等. 垂直结构LED和倒装结构LED的发光特性研究[J]. 光电技术应用, 2014,29(5):47-51. LI Y,DONG S S,WANG Y R, et al.. Optical characterization of light-emitting diodes fabricated with vertical and flip-chip structure[J]. Electro-Opt. Technol. Appl., 2014,29(5):47-51. (in Chinese)
赖瑜. LED倒装芯片封装性能研究[D]. 南昌:南昌大学, 2014. LAI Y. Researh on The Packaging Characteristics of LED Flip-chips [D]. Nanchang:Nanchang University, 2014. (in Chinese)
漆琴. 功率型LED结温检测与ANSYS仿真分析[D]. 杭州:杭州电子科技大学, 2015. QI Q. High Power LED Junction Temperature Measurement and ANSYS Simulation Analysis [D]. Hangzhou:Hangzhou Dianzi University, 2015. (in Chinese)
褚静,荆凌锋,张俊杰. 大功率LED结温与光效关系的研究[J]. 信息技术与信息化, 2016(5):115-117. CHU J,JING L F,ZHANG J J. Study on the relationship between junction temperature and optical efficiency of high-power LED[J]. Inform.Technol. Inform., 2016(5):115-117. (in Chinese)
朱丽虹,刘宝林,张保平. 生长温度对InGaN/GaN多量子阱LED光学特性的影响[J]. 半导体光电, 2008,29(2):165-169. ZHU L H,LIU B L,ZHANG B P. Study of optical characteristics of InGaN/GaN MQW LED depended on growth temperature[J]. Semicond. Optoelectron., 2008,29(2):165-169. (in Chinese)
BRAUN D,HEEGER A J. Visible light emission from semiconducting polymer diodes[J]. Appl. Phys. Lett., 1991,58(18):1982-1984.
刘卫华,李有群,方文卿,等. Si衬底GaN基LED的结温特性[J]. 发光学报, 2006,27(2):211-214. LIU W H,LI Y Q,FANG W Q, et al.. The junction-temperature characteristic of GaN light-emitting diodes on Si substrate[J]. Chin. J. Lumin., 2006,27(2):211-214. (in Chinese)
余彬海,王垚浩. 结温与热阻制约大功率LED发展[J]. 发光学报, 2005,26(6):761-766. YU B H,WANG Y H. Junction temperature and thermal resistance restrict the developing of high-power LED[J]. Chin. J. Lumin., 2005,26(6):761-766. (in Chinese)
钱诚,樊嘉杰,樊学军,等. LED照明产品光通量衰减加速试验及可靠性评估[J]. 照明工程学报, 2016,27(2):43-48 QIAN C,FAN J J,FAN X J, et al.. Accelerated luminous flux depreciation test and reliability assessment for LED lighting products[J]. China Illum. Eng. J., 2016,27(2):43-48. (in Chinese)