Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance

XU Shuai; WANG Guang-xu; WU Xiao-ming; GUO Xing; LIU Jun-lin; JIANG Feng-yi

doi:10.3788/fgxb20194007.0865

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Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance
- Chinese Journal of Luminescence Vol. 40, Issue 7, Pages: 865-870(2019)
- 作者机构：
  
  1. 南昌大学国家硅基LED工程技术研究中心, 江西南昌 330096
  2. 南昌黄绿照明有限公司, 江西南昌 330096
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20194007.0865
  CLC： O484.4;O482.31
- Received：17 July 2018，
  
  Revised：16 October 2018，
  
  Published Online：05 November 2018，
  
  Published：05 July 2019
- 稿件说明：
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徐帅, 王光绪, 吴小明等. Ni插入层对Ag/p-GaN界面接触性能的影响机理[J]. 发光学报, 2019,40(7): 865-870

XU Shuai, WANG Guang-xu, WU Xiao-ming etc. Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance[J]. Chinese Journal of Luminescence, 2019,40(7): 865-870
徐帅, 王光绪, 吴小明等. Ni插入层对Ag/p-GaN界面接触性能的影响机理[J]. 发光学报, 2019,40(7): 865-870 DOI： 10.3788/fgxb20194007.0865.

XU Shuai, WANG Guang-xu, WU Xiao-ming etc. Influence Mechanism of Ni Interlayer on Ag/p-GaN Interfacial Contact Performance[J]. Chinese Journal of Luminescence, 2019,40(7): 865-870 DOI： 10.3788/fgxb20194007.0865.

摘要

采用"牺牲Ni处理"的方法研究了Ni对Ag/p-GaN界面接触性能的影响机理。利用传输线法（TLM）、紫外分光光度计、X射线光电子能谱（XPS）以及二次离子质谱仪（SIMS）等表征方式对Ag/p-GaN界面层光电性能进行了研究。结果表明，牺牲Ni处理后p-GaN表面仍会残留少量的Ni并以Ni

的形式存在；p-GaN表面Ga 2p3结合能峰位朝低能方向移动了0.3 eV，提高了Ag/p-GaN间的欧姆接触性能。我们认为，界面处的Ni会优先和p-GaN表面Ga

氧化物中的O结合形成Ni

，进而降低了p-GaN表面费米能级，提高了Ag/p-GaN之间的欧姆接触性能。

Abstract

The effect of Ni on the contact performance of Ag/p-GaN interface is studied by the method of Ni-assisted treatment. The photoelectric properties of Ag/p-GaN interfacial are investigated by means of transmission line method(TLM)

UV spectrophotometer(UV)

X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometer(SIMS). The results show that a small amount of Ni remains on the surface of p-GaN after Ni-assisted treatment and exists in the form of Ni

. The binding energy peak of Ga 2p3 on the p-GaN surface shifts 0.3 eV in the direction of low energy

which improves the Ohmic contact performance between Ag/p-GaN after Ni-assisted treatment. In our opinion

the Ni at the interface will preferentially combine with the O of Ga

on the surface of p-GaN to form Ni

thus reducing the Fermi level on the surface of p-GaN and improving the Ohmic contact performance between Ag/p-GaN.

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Keywords

references

SONG J O,KWAK J S,PARK Y, et al.. Ohmic and degradation mechanisms of Ag contacts on p-type GaN[J]. Appl. Phys. Lett., 2005,86(6):062104-1-3.

HWANG Y T,HONG H G,SEONG T Y, et al.. Electrical and thermal stability of Ag Ohmic contacts for GaN-based flip-chip light-emitting diodes by using an AgAl alloy capping layer[J]. Mater. Sci. Semicond. Process., 2007,10(1):14-18.

OH M,KIM H. High-efficiency GaN-based light-emitting diodes fabricated with identical Ag contact formed on both n-and p-layers[J]. Opt. Express, 2013,21(18):20857-20862.

HIBBARD D L,JUNG S P,WANG C, et al.. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag[J]. Appl. Phys. Lett., 2003,83(2):311-313.

SON J H,JANG H W,LEE J L. Erratum:"Low-resistance and high-reflectance Ni/Ag/Ru/Ni/Au Ohmic contact on p-type GaN"[Appl. Phys. Lett. 85,4421(2004)] [J]. Appl. Phys. Lett., 2007,90(10):109903-1-1.

封波. 硅衬底GaN基大功率LED的研制[D]. 南昌:南昌大学, 2018. FENG B. Fabrication of GaN-based High Power Light-emitting Diode Grown on Si Substrate [D]. Nanchang:Nanchang University, 2018. (in Chinese).

KIM S. Effect of interfacial properties of p-GaN/sputter-deposited NiAg-based electrode on optical properties of vertical GaN-based LEDs[J]. Electrochem. Solid-State Lett., 2009,12(12):H441-H444.

JANG H W,SON J H,LEE J L. Formation of high-quality Ag-based Ohmic contacts to p-type GaN[J]. J. Electrochem. Soc., 2008,155(8):H563-H568.

SON J H,SONG Y H,YU H K, et al.. Effects of Ni cladding layers on suppression of Ag agglomeration in Ag-based Ohmic contacts on p-GaN[J]. Appl. Phys. Lett., 2009,95(6):062108-1-3.

LIN N M,SHEI S C,CHANG S J. Investigation of Ni/Ag contact to p-GaN with an O2 plasma treatment and its application to GaN-based LEDs[J]. Phys. Status Solidi A, 2012,209(8):1568-1574.

黄亚平,云峰,丁文,等. Ni/Ag/Ti/Au与p-GaN的欧姆接触性能及光反射率[J]. 物理学报, 2014,63(12):127302-1-8. HUANG Y P,YUN F,DING W, et al.. The reflectivity and Ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN[J]. Acta Phys. Sinica, 2014,63(12):127302-1-8. (in Chinese)

王光绪,陶喜霞,熊传兵,等. 牺牲Ni退火对硅衬底GaN基发光二极管p型接触影响的研究[J]. 物理学报, 2011,60(7):078503-1-6. WANG G X,TAO X X,XIONG C B, et al.. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates[J]. Acta Phys. Sinica, 2011,60(7):078503-1-6. (in Chinese)

WANG L,WU F F,LIU S T, et al.. Reduction of the resistivity of Ag/p-GaN contact by progressive breakdown of the interfacial contamination layer[J]. J. Appl. Phys., 2015,118(16):165703.

GRECO G,PRYSTAWKO P,LESZCZYNSKI M, et al.. Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN[J]. J. Appl. Phys., 2011,110(12):123703-1-7.

CHANG L B,SHIUE C C,JENG M J. High reflective p-GaN/Ni/Ag/Ti/Au Ohmic contacts for flip-chip light-emitting diode(FCLED) applications[J]. Appl. Surf. Sci., 2009,255(12):6155-6158.

PARK J S,JEON J W,JIN S, et al.. Improved thermal stability of Ag Ohmic contacts for GaN-based vertical light-emitting diodes using a Zn capping layer[J]. Electrochem. Solid-State Lett., 2012,15(4):H130-H132.

PARK J S,HAN J,HAN J W, et al.. Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector[J]. Superlattices Microstruct., 2013,64:7-14.

PARK J S,JEON J W,SEONG T Y. Silver-induced activation for improving the electrical characteristics of GaN-based vertical light-emitting diodes[J]. Curr. Appl. Phys., 2013,13(2):377-380.

ZHAO L Z,PAN C H. XPS studies of oxidation behavior of nickel and thermal stability of surface oxides[J]. Acta Metall. Sinica (Eng. Lett.), 1989,2(8):133-137.

CAO X A,PEARTON S J,DANG G, et al.. Effects of interfacial oxides on Schottky barrier contacts to n-and p-type GaN[J]. Appl. Phys. Lett., 1999,75(26):4130-4132.

LEE C S,LIN Y J,LEE C T. Investigation of oxidation mechanism for Ohmic formation in Ni/Au contacts to p-type GaN layers[J]. Appl. Phys. Lett., 2001,79(23):3815-3817.

ISHIKAWA H,KOBAYASHI S,KOIDE Y, et al.. Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces[J]. J. Appl. Phys., 1997,81(3):1315-1322.

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