Organic Metal-insulator-semiconductor Devices Based on Compound Insulation Layers of SiNx/PMMA

XIE Qiang; YAN Chuang; ZHU Yang-yang; SUN Qiang; WANG Lu; WANG Li-juan; SUN Li-jing

doi:10.3788/fgxb20194006.0773

您当前的位置：

首页 >

文章列表页 >

Organic Metal-insulator-semiconductor Devices Based on Compound Insulation Layers of SiN_x/PMMA

Device Fabrication and Physics | 更新时间：2020-08-12

- Organic Metal-insulator-semiconductor Devices Based on Compound Insulation Layers of SiN_x/PMMA
- Chinese Journal of Luminescence Vol. 40, Issue 6, Pages: 773-780(2019)
- 作者机构：
  
  1. 长春工业大学化学工程学院, 吉林长春 130012
  2. 长春工业大学材料科学与工程学院, 吉林长春 130012
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China (21403016);Key Program f
- DOI：10.3788/fgxb20194006.0773
  CLC： O649
- Received：09 July 2018，
  
  Revised：26 September 2018，
  
  Published Online：11 October 2018，
  
  Published：05 June 2019
- 稿件说明：
移动端阅览
谢强, 闫闯, 朱阳阳等. 基于复合绝缘层SiNx/PMMA的有机金属-绝缘层-半导体器件[J]. 发光学报, 2019,40(6): 773-780

XIE Qiang, YAN Chuang, ZHU Yang-yang etc. Organic Metal-insulator-semiconductor Devices Based on Compound Insulation Layers of SiNx/PMMA[J]. Chinese Journal of Luminescence, 2019,40(6): 773-780
谢强, 闫闯, 朱阳阳等. 基于复合绝缘层SiNx/PMMA的有机金属-绝缘层-半导体器件[J]. 发光学报, 2019,40(6): 773-780 DOI： 10.3788/fgxb20194006.0773.

XIE Qiang, YAN Chuang, ZHU Yang-yang etc. Organic Metal-insulator-semiconductor Devices Based on Compound Insulation Layers of SiNx/PMMA[J]. Chinese Journal of Luminescence, 2019,40(6): 773-780 DOI： 10.3788/fgxb20194006.0773.

摘要

为改善有机半导体器件的界面性能，在氮化硅层上旋涂聚甲基丙烯酸甲酯（PMMA）构成复合绝缘层。首先，利用原子力显微镜研究了不同浓度的PMMA复合绝缘层的表面形貌及粗糙度。接着，蒸镀六联苯（

-6P）、酞菁铜和金电极，构成有机的金属-绝缘层-半导体（MIS）器件。最后，研究了MIS器件的回滞效应及电性能。实验结果表明，复合绝缘层的粗糙度为单绝缘层的1/5，大约1.4 nm。复合绝缘层上的

-6P薄膜随着PMMA浓度增加形成更大更有序的畴，但单绝缘层上薄膜呈无序颗粒状。复合绝缘层的有机MIS器件几乎没有回滞现象，但单绝缘层的器件最大回滞电压约为12.8 V，界面陷阱电荷密度约为1.1610

-2

。复合绝缘层有机薄膜晶体管的迁移率为1.2210

-2

/（Vs），比单绝缘层提高了60%，饱和电流提高了345%。基于复合绝缘层的MIS器件具有更好的界面性能和电性能，可应用到有机显示领域。

Abstract

In order to improve the interfacial properties of organic semiconductor devices

polymethyl methacrylate(PMMA) was spin-coated on the silicon nitride insulation layers to fabricate a compound insulation layers. First

the surface topography and roughness of composite insulation layers with different PMMA concentration were investigated by atomic force microscope. Then

the organic metal-insulation-semiconductor(MIS) devices were fabricated by vacuum evaporating of para-hexaphenyl(

-6P)

phthalocyanine copper and the gold material electrodes

respectively. Finally

the hysteresis effect and electrical properties of MIS devices were studied. The experimental results show that the roughness of the compound insulation layers was lower than 1/5 of the single insulating layers and was about 1.4 nm. The

-6P films can form the larger and more ordered domains on the compound insulation layers with the increase of PMMA concentration

but it is formed spherical islands on the single insulating layers. The organic MIS devices of the compound insulation layers have almost no hysteresis

but the devices of single insulation layers have the largest hysteresis voltage of about 12.8 V and its internal trap charge density is about 1.1610

-2

. The mobility of MIS devices with the compound insulation layers is 1.2210

-2

/(Vs)

which is 60% higher than that of MIS devices of the single insulation layers. The saturation currents are increased by 345%. The MIS devices based on the compound insulation layers have better interface performance and electrical performance which can be applied to the field of organic display.

关键词

Keywords

references

MENESES C, SANCHEZ J G, ESTRADA M, et al.. Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating[J]. Microelectron. Reliab., 2014, 54(5):893-898.

SUNG S, PARK S, LEE W J, et al.. Low-voltage flexible organic electronics based on high-performance sol-gel titanium dioxide dielectric[J]. ACS Appl. Mater. Interfaces, 2015, 7(14):7456-7461.

JEONG H, OH H M, BANG S, et al.. Metal-insulator-semiconductor diode consisting of two-dimensional nanomaterials[J]. Nano Lett., 2016, 16(3):1858-1862.

OENER S Z, VAN DE GROEP J, MACCO B, et al.. Metal-insulator-semiconductor nanowire network solar cells[J]. Nano Lett., 2016, 16(6):3689-3695.

MONTAEZ L M, MVLLER K, HEINKE L, et al.. Integration of thin film of metal-organic frameworks in metal-insulator-semiconductor capacitor structures[J]. Microporous Mesoporous Mater., 2018, 265:185-188.

尤坤, 宋航, 黎大兵, 等. GaN基MIS紫外探测器的电学及光电特性[J]. 发光学报, 2012, 33(1):55-61. YOU K, SONG H, LI D B, et al.. Electrical and optoelectronics characteristics of GaN based MIS photo-detectors[J]. Chin. J. Lumin., 2012, 33(1):55-61. (in Chinese)

HA Y G, JEONG S, WU J S, et al.. Flexible low-voltage organic thin-film transistors enabled by low-temperature, ambient solution-processable inorganic/organic hybrid gate dielectrics[J]. J. Am. Chem. Soc., 2010, 132(49):17426-17434.

李占国, 张玉婷, 谢强, 等. 基于p-6P异质诱导生长酞菁铜薄膜的NO2传感器[J]. 物理化学学报, 2016, 32(4):1005-1011. LI Z G, ZHANG Y T, XIE Q, et al.. NO2 sensors based on p-6P heterogametic induction growth of copper phthalocyanine thin films[J]. Acta Phys. Chim. Sinica, 2016, 32(4):1005-1011. (in Chinese)

HU Y L, GU W, LIU N, et al.. Fabricating organic transistors based on domain-ordered copper phthalocyanine film grown on oligothiophene epitaxial substrate[J]. Phys. Status Solidi Rapid Res. Lett., 2013, 7(8):558-561.

GUI H Y, WEI B, WANG J. High sensitivity and air stability in an organic transistor-based biosensor by inserting a CuPc layer[J]. Phys. Status Solidi Rapid Res. Lett., 2014, 211(11):2499-2502.

CHIU Y C, CHEN B H, JAN D J, et al.. Growth behavior of CuPc films by physical vapor deposition[J]. Cryst. Res. Technol., 2011, 46(3):295-299.

ZHANG X W, HAN G R. Preparation and photoconductive properties of vacuum-sublimed CuPc/ZnS multilayer films[J]. Phys. Status Solidi A, 2003, 195(2):359-366.

ZHANG Y, WEI X C, ZHANG H, et al.. Ambipolar organic transistors with high on/off ratio by introducing a modified layer of gate insulator[J]. Appl. Surf. Sci., 2018, 427:452-457.

QIAN C, SUN J, KONG L A, et al.. High-performance organic heterojunction phototransistors based on highly ordered copper phthalocyanine/para-sexiphenyl thin films[J]. Adv. Funct. Mater., 2017, 27(6):1604933-1-8.

MA F, WANG S R, LI X G. Synthesis, spectral characterization of CuPcF16 and its application in organic thin film transistors using p-6P as inducing layer[J]. J. Phys. Chem. Solids, 2012, 73(4):589-592.

WANG H, ZHU F, YANG J, et al.. Weak epitaxy growth affording high-mobility thin films of disk-like organic semiconductors[J]. Adv. Mater., 2007, 19(16):2168-2171.

KAMAL R, CHANDRAVANSHI P, CHOI D K, et al.. The effect of annealing in forming gas on the a-IGZO thin film transistor performance and valence band cut-off of IGZO on SiNx[J]. Curr. Appl. Phys., 2015, 15(5):648-653.

郭永林, 梁续旭, 胡守成, 等. Al2O3薄层修饰SiNx绝缘层的IGZO-TFTs器件的性能研究[J]. 发光学报, 2015, 36(8):947-952. GUO Y L, LIANG X X, HU S C, et al.. Improvement of IGZO-TFTs performance with SiNx gate insulator modified by Al2O3 film[J]. Chin. J. Lumin., 2015, 36(8):947-952. (in Chinese)

GARCA B, OCAMPO M A, LUNA-BRCENAS G, et al.. Structural and electrical characterization of isotactic PMMA thin films deposited by spin coating[J]. Macromol. Symp., 2009, 283-284(1):342-347.

IRAWATI N, ABDULLAH T N R, RAHMAN H A, et al.. PMMA microfiber loop resonator for humidity sensor[J]. Sens. Actuators A Phys., 2017, 260:112-116.

石晓东, 王伟, 李春静, 等. Ta2O5-PMMA复合栅绝缘层对OFETs性能的影响[J]. 发光学报, 2017, 38(1):70-75. SHI X D, WANG W, LI C J, et al.. Effect of Ta2O5-PMMA compound gate insulator on the performance of organic field effect transistors[J]. Chin. J. Lumin., 2017, 38(1):70-75. (in English)

SOEDA J, OKAMOTO T, MITSUI C, et al.. Stable growth of large-area single crystalline thin films from an organic semiconductor/polymer blend solution for high-mobility organic field-effect transistors[J]. Org. Electron., 2016, 39:127-132.

YANG H, YANG C, KIM S H, et al.. Dependence of pentacene crystal growth on dielectric roughness for fabrication of flexible field-effect transistors[J]. ACS Appl. Mater. Interfaces, 2010, 2(2):391-396.

WANG L J, LIU G J, WANG H B, et al.. Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices[J]. Appl. Phys. Lett., 2007, 91(15):153508-1-3.

BLVLLE B, HUSERMANN R, BATLOGG B. Approaching the trap-free limit in organic single-crystal field-effect transistors[J]. Phys. Rev. Appl., 2014, 1(3):034006-1-7.

Views

138

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Fabrication of Si₃N₄ Nanofibers from Polymer and Its Optical Property

Related Author

XIE Zheng-fang

SHAN Wen-guang

WU Xiao-shan

ZHANG Feng-ming

XU Shi-feng

WANG Yan-song

FAN Yi

CHU Ming-hui

Related Institution

Photovoltaic Engineer Center, Department of physics, Nanjing University

Key Laboratory of Excited State Processes Chinese Academy of Sciences Changchun China

Department of Physics Jilin University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰