(002) Preferred Oriented AlN Films Grown by DC Magnetron Sputtering and Photoluminescence

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(002) Preferred Oriented AlN Films Grown by DC Magnetron Sputtering and Photoluminescence

Synthesis and Properties of Materials | 更新时间：2020-08-12

- (002) Preferred Oriented AlN Films Grown by DC Magnetron Sputtering and Photoluminescence
- Chinese Journal of Luminescence Vol. 40, Issue 6, Pages: 719-724(2019)
- 作者机构：
  
  沈阳理工大学理学院, 辽宁沈阳 110159
- 作者简介：
- 基金信息：
  
  Supported by Scientific Research Foundation of Technological Bureau of Shenyang(F16-
- DOI：10.3788/fgxb20194006.0719
  CLC： O471.4;O482.31
- Received：09 July 2018，
  
  Revised：22 October 2018，
  
  Published Online：17 October 2018，
  
  Published：05 June 2019
- 稿件说明：
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吕伟, 刘俊, 赵鹏宇等. 直流磁控溅射生长(002)择优取向AlN薄膜及其光致发光[J]. 发光学报, 2019,40(6): 719-724

LYU Wei, LIU Jun, ZHAO Peng-yu etc. (002) Preferred Oriented AlN Films Grown by DC Magnetron Sputtering and Photoluminescence[J]. Chinese Journal of Luminescence, 2019,40(6): 719-724
吕伟, 刘俊, 赵鹏宇等. 直流磁控溅射生长(002)择优取向AlN薄膜及其光致发光[J]. 发光学报, 2019,40(6): 719-724 DOI： 10.3788/fgxb20194006.0719.

LYU Wei, LIU Jun, ZHAO Peng-yu etc. (002) Preferred Oriented AlN Films Grown by DC Magnetron Sputtering and Photoluminescence[J]. Chinese Journal of Luminescence, 2019,40(6): 719-724 DOI： 10.3788/fgxb20194006.0719.

摘要

采用直流反应磁控溅射法，在玻璃衬底上生长了沿（002）择优取向的AlN薄膜，用X射线衍射仪（XRD）和扫描电子显微镜（SEM）对AlN薄膜结构和表面形貌进行表征，并测量了AlN薄膜在405 nm激光激发下的光致发光（PL）光谱。结果表明，在不同氮气含量条件下生长的AlN薄膜均呈（002）择优取向，薄膜表面呈小颗粒密堆积排列，颗粒尺寸在20 nm左右。不同氮气含量条件下生长的AlN薄膜在550 nm处均有较强的由于V

Al

能级向价带跃迁引起的缺陷能级发光峰；AlN薄膜在589，614，654 nm处也有较弱的缺陷能级发光峰，随着氮气含量增大，缺陷能级发光峰越来越明显，产生原因分别为O

N

-O

N

缺陷对向V

Al

-2O

N

产生的复合缺陷能级的跃迁、导带向与氧有关的杂质能级（I

O

）间的跃迁以及V

Al

-O

N

深能级向价带的跃迁。

Abstract

The AlN thin films with (002) preferred orientation was deposited on the glass substrate by DC magnetron reactive sputtering method under different nitrogen concentration. The structure and surface pattern of AlN films were characterized by X-ray diffraction(XRD) and scanning electron microscope(SEM). The luminescence properties of AlN thin films were also investigated by photoluminescence(PL) spectra. The results show that the AlN thin films deposited under different nitrogen concentration all present (002) preferred orientation with uniformly dense surface and the average size of the grains is about 20 nm. The PL spectra shows that the AlN thin films deposited under different nitrogen all have a strong emission at 550 nm originating from the defect of V

Al

transiting to the VB. There are several weak defect emissions at 589

614

654 nm. These defect emissions become more obvious with the N

2

concentration increasing. The weak emissions at 589

614

654 nm can be ascribed to transition from O

N

-O

N

to V

Al

-2O

N

from CB to oxygen impurities(I

O

) and from V

Al

-O

N

to VB respectively.

关键词

Keywords

references

KALE A, BRUSA R S, MIOTELLO A. Structural and electrical properties of AlN films deposited using reactive RF magnetron sputtering for solar concentrator application[J]. Appl. Surf. Sci., 2012, 258(8):3450-3454.

杨家乐, 沈鸿烈, 邢正伟, 等. 氮气流量对磁控溅射AlN薄膜光学性能的影响[J]. 半导体技术, 2017, 42(1):32-36. YANG J L, SHEN H L, XING Z W, et al.. Influence of the nitrogen flow rate on the optical properties of AlN thin films deposited by magnetron sputtering[J]. Semicond. Technol., 2017, 42(1):32-36. (in Chinese)

LEI F F, LEI X, YE Z T, et al.. Photoluminescent properties of AlN:Mn2+phosphors[J]. J. Alloys Compd., 2018, 763:466-470.

YUAN Y M, ZUO R, MAO K K, et al.. Adsorption properties of AlN on Si(Ⅲ) surface:a density functional study[J]. Appl. Surf. Sci., 2018, 436:50-57.

薛守迪, 杨成韬, 解群眺, 等. 衬底温度对AIN薄膜结构及电阻率的影响[J]. 压电与声光, 2011, 33(3):475-478. XUE S D, YANG C T, XIE Q T, et al.. Effect of substrate temperature on structure and resistivity of AIN thin films[J]. Piezoelectrics Acoustooptics, 2011, 33(3):475-478. (in Chinese)

LEGRAND J, PIGEAT P, EASWARAKHANTHAN T, et al.. Structural and optical properties of magnetron-sputtered Er-doped AlN films grown under negative substrate bias[J]. Appl. Surf. Sci., 2014, 307:189-196.

黄科. 蓝宝石衬底上高质量AlN材料的制备[J]. 微纳电子技术, 2018, 55(2):143-147. HUANG K. Preparation of high quality AlN materials on the sapphire substrate[J]. Micronanoelectr. Technol., 2018, 55(2):143-147. (in Chinese)

ZANG Y, LI L B, REN Z Q, et al.. Characterization of AlN thin film prepared by reactive sputtering[J]. Surf. Interface Anal., 2016, 48(10):1029-1032.

WANG W L, YANG W J, LIU Z L, et al.. Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(Ⅲ) substrates by pulsed laser deposition[J]. Sci. Rep., 2015, 5:11480-1-12.

RIAH B, AYAD A, CAMUS J, et al.. Textured hexagonal and cubic phases of AlN films deposited on Si (100) by DC magnetron sputtering and high power impulse magnetron sputtering[J]. Thin Solid Films, 2018, 655:34-40.

LIU H Y, TANG G S, ZENG F, et al.. Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature[J]. J. Cryst. Growth, 2013, 363:80-85.

IMRAN S, YUAN J, YIN G, et al.. Influence of metal electrodes on c-axis orientation of AlN thin films deposited by DC magnetron sputtering[J]. Surf. Interface Anal., 2017, 49(9):885-891.

TAURINO A, SIGNORE M A, CATALANO M, et al.. (101) and (002) oriented AlN thin films deposited by sputtering[J]. Mater. Lett., 2017, 200:18-20.

ALIZADEH M, GOH B T, PANDEY A K, et al.. Low-RF-power growth of InN thin films by plasma-assisted reactive evaporation with a localized ion source[J]. Mater. Chem. Phys., 2017, 199:408-415.

高扬, 许绍俊, 谌青青, 等. 溅射功率对AlN薄膜结构形貌的影响[J]. 压电与声光, 2012, 34(2):276-278. GAO Y, XU S J, CHEN Q Q, et al.. Effect of sputtering power on crystal structure morphology in AlN thin films[J]. Piezoelectrics Acoustooptics, 2012, 34(2):276-278. (in Chinese)

余志明, 刘丹瑛, 魏秋平, 等. 氮气含量对射频磁控溅射法制备的AlN薄膜微观结构与力学性能的影响[J]. 粉末冶金材料科学与工程, 2014, 19(1):101-107. YU Z M, LIU D Y, WEI Q P, et al.. Effect of nitrogen concentration on microstructure and mechanical properties of reactive radio frequency magnetron sputtered AlN thin films[J]. Mater. Sci. Eng. Powder Metal., 2014, 19(1):101-107. (in Chinese)

CHICHIBU S F, HAZU K, ISHIKAWA Y, et al.. Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements[J]. Appl. Phys. Lett., 2013, 103(14):142103-1-5.

SEDHAIN A, LIN J Y, JIANG H X. Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN[J]. Appl. Phys. Lett., 2012, 100(22):221107-1-4.

PETIT S, JONES R, SHAW M J, et al.. Electronic behavior of rare-earth dopants in AlN:a density-functional study[J]. Phys. Rev. B, 2005, 72(7):073205-1-4.

KOPPE T, HOFSSS H, VETTER U. Overview of band-edge and defect related luminescence in aluminum nitride[J]. J. Lumin., 2016, 178:267-281.

YUWEN M H, LIU J Q, XIA C, et al.. Novel single-host Al1-xSixCxN1-x:Mn2+ white phosphors for field emission displays[J]. J. Mater. Sci:Mater. Electron., 2017, 28(12):8405-8413.

CAO Y G, CHEN X L, LAN Y C, et al.. Blue emission and Raman scattering spectrum from AlN nanocrystalline powders[J]. J. Cryst. Growth, 2000, 213(1-2):198-202.

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