High Temperature-stable 25 Gbit/s 850 nm Vertical-cavity Surface-emitting Lasers

ZHOU Guang-zheng; LAN Tian; LI Ying; WANG Zhi-yong

doi:10.3788/fgxb20194005.0630

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High Temperature-stable 25 Gbit/s 850 nm Vertical-cavity Surface-emitting Lasers

Device Fabrication and Physics | 更新时间：2020-08-12

- High Temperature-stable 25 Gbit/s 850 nm Vertical-cavity Surface-emitting Lasers
- Chinese Journal of Luminescence Vol. 40, Issue 5, Pages: 630-634(2019)
- 作者机构：
  
  北京工业大学激光工程研究院, 北京 100124
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20194005.0630
  CLC： TN248.4
- Received：21 May 2018，
  
  Revised：08 September 2018，
  
  Published Online：17 September 2018，
  
  Published：05 May 2019
- 稿件说明：
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周广正, 兰天, 李颖等. 高温稳定25 Gbit/s 850 nm垂直腔面发射激光器[J]. 发光学报, 2019,40(5): 630-634

ZHOU Guang-zheng, LAN Tian, LI Ying etc. High Temperature-stable 25 Gbit/s 850 nm Vertical-cavity Surface-emitting Lasers[J]. Chinese Journal of Luminescence, 2019,40(5): 630-634
周广正, 兰天, 李颖等. 高温稳定25 Gbit/s 850 nm垂直腔面发射激光器[J]. 发光学报, 2019,40(5): 630-634 DOI： 10.3788/fgxb20194005.0630.

ZHOU Guang-zheng, LAN Tian, LI Ying etc. High Temperature-stable 25 Gbit/s 850 nm Vertical-cavity Surface-emitting Lasers[J]. Chinese Journal of Luminescence, 2019,40(5): 630-634 DOI： 10.3788/fgxb20194005.0630.

摘要

通过在N型分布布拉格反射镜（DBR）中采用高热导率AlAs材料，且增加AlAs层所占的厚度比例，在保持DBR反射率基本不变的情况下，大幅度增加了N型DBR的热导率，提高了器件高温工作性能。制作了氧化限制型顶发射VCSEL器件，不同温度条件下的直流测试结果表明:25 ℃时热反转功率超过8 mW；85 ℃ 时热反转电流为11 mA，功率达5 mW，表现出较好的高温工作特性。远场发散角小于17。0~70 ℃的温度条件下眼图都较清晰，表明器件满足高温25 Gbit/s工作要求。

Abstract

By using the material of AlAs with high thermal conductivity in the n-type distributed Bragg reflector (DBR) and increasing the thickness ratio of the AlAs layer

the thermal conductivity of N-side DBR was greatly increased and the high temperature performance of the device was improved. VCSELs devices were produced

and the results of DC test under different temperature conditions showed that the maximum thermal rollover optical output power was 9 mW at 25℃

and the maximum optical output power of 5 mW was achieved at a thermal rollover current of 11 mA at 85℃

showing high DC performance of high temperature operation. The far field divergence angle was less than 17. Eye diagrams were clear under different temperature conditions varying from 0℃ to 70℃

indicating that the devices met the requirements of high temperature 25 Gbit/s operation.

关键词

Keywords

references

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