Fabrication and Near-infrared Spectral Modulation of Au/Bi Ions Co-doped Silica Thin Films
Device Fabrication and Physics|更新时间:2020-08-12
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Fabrication and Near-infrared Spectral Modulation of Au/Bi Ions Co-doped Silica Thin Films
Chinese Journal of LuminescenceVol. 40, Issue 5, Pages: 623-629(2019)
作者机构:
宁波大学 信息科学与工程学院,浙江 宁波,315211
作者简介:
基金信息:
Supported by National Natural Science Foundation of China(61704094,61474068,61404076);Research Foundation of Education Bureau of Zhejiang Province(Y201737316);Sponsored by K. C. Wong Magna Fund in Ningbo University
CHEN Ruo-wang, WANG Peng-jun, ZHANG Xiao-wei etc. Fabrication and Near-infrared Spectral Modulation of Au/Bi Ions Co-doped Silica Thin Films[J]. Chinese Journal of Luminescence, 2019,40(5): 623-629
CHEN Ruo-wang, WANG Peng-jun, ZHANG Xiao-wei etc. Fabrication and Near-infrared Spectral Modulation of Au/Bi Ions Co-doped Silica Thin Films[J]. Chinese Journal of Luminescence, 2019,40(5): 623-629 DOI: 10.3788/fgxb20194005.0623.
Fabrication and Near-infrared Spectral Modulation of Au/Bi Ions Co-doped Silica Thin Films
Near-infrared luminescence origin of Bi-doped amorphous silica thin film is discussed by the XPS characterizations and selective PL measurements. The nature of the near-infrared emission in amorphous silica thin film is considered as both the transition of Bi
+
ions from
3
P
1
to
3
P
0
and the transition of Bi
0
from
2
D
3/2
to
4
S
3/2
. Further
the confined crystallization growth strategy is designed for fabricating uniform-size Au quantum dots embedded in Bi-doped silica thin film. Through controls of the doping amounts of Au ions
the NIR emission of Bi ions in silica thin film can be wavelength-tunable and enhanced by nearly 300% on the optimum Au ions doping amount. The thickness of thin film is 90 nm and the formation of Au quantum dots with different average sizes and number densities have been confirmed by the high-resolution TEM images. Temperature-dependent PL emission spectra suggest parts of Au ions may play a role of eliminating hydroxyl groups
which gives rises to greatly enhanced PL intensity in the near-infrared region. We anticipate that both greatly enhanced and wavelength-tunable NIR luminescence and discussion of luminescence origin would shed light on future research of Bi ions-doped luminescent materials.
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references
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