Synthesis and Photoluminescent Properties of Ba3SiO5:Eu Phosphor

WU Mei-hong; LUO Lan; GUO Rui; ZHANG Yuan-bo; SUN Chuan-yao

doi:10.3788/fgxb20194005.0610

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Synthesis and Photoluminescent Properties of Ba₃SiO₅:Eu Phosphor

Synthesis and Properties of Materials | 更新时间：2020-08-12

- Synthesis and Photoluminescent Properties of Ba₃SiO₅:Eu Phosphor
- Chinese Journal of Luminescence Vol. 40, Issue 5, Pages: 610-615(2019)
- 作者机构：
  
  1. 南昌大学前湖学院,江西南昌,330001
  2. 南昌大学江西省轻质高强结构材料重点实验室, 江西南昌 330001
  3. 南昌大学材料科学与工程学院,江西南昌,330001
- 作者简介：
- 基金信息：
  
  Supported by National Key Research and Development Program(2016YFB0701201,2016YFB0701203,2017YFB1103701);National Natural Science Foundation of China(11564025,51671101,51062003);Natural Science Foundation of Jiangxi Province(20161ACB21003,20172BCB22002);Key Research and Development Program of Jiangxi Province(GJJ150010)
- DOI：10.3788/fgxb20194005.0610
  CLC： TB332;O482.31
- Received：27 June 2018，
  
  Revised：02 December 2018，
  
  Published Online：26 September 2018，
  
  Published：05 May 2019
- 稿件说明：
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吴梅虹, 罗岚, 郭锐等. 新型Ba3SiO5∶Eu荧光粉的合成及光谱性质[J]. 发光学报, 2019,40(5): 610-615

WU Mei-hong, LUO Lan, GUO Rui etc. Synthesis and Photoluminescent Properties of Ba3SiO5:Eu Phosphor[J]. Chinese Journal of Luminescence, 2019,40(5): 610-615
吴梅虹, 罗岚, 郭锐等. 新型Ba3SiO5∶Eu荧光粉的合成及光谱性质[J]. 发光学报, 2019,40(5): 610-615 DOI： 10.3788/fgxb20194005.0610.

WU Mei-hong, LUO Lan, GUO Rui etc. Synthesis and Photoluminescent Properties of Ba3SiO5:Eu Phosphor[J]. Chinese Journal of Luminescence, 2019,40(5): 610-615 DOI： 10.3788/fgxb20194005.0610.

摘要

以BaCO

、SiO

、Eu

为原料在还原气氛下采用高温固相法制备了Ba

SiO

∶Eu荧光粉体。实验结果表明，制备Ba

SiO

的最佳工艺条件是Ba/Si比为3，1 200 ℃保温4 h。光谱分析表明，Ba

SiO

∶Eu荧光粉在254，365，410 nm激发下发射主峰为566 nm（Eu

的4f

－1

5d4f

）宽带发射，量子效率分别为70%、50%、10%，荧光寿命为百纳秒级；以566 nm为监视波长测得激发谱为主峰在250~450 nm范围内的宽带发射，主峰为360 nm，且在410 nm出现小峰； Eu离子最佳掺杂浓度为5%，由发光强度随掺杂离子浓度变化曲线，可以得出Ba

SiO

中Eu离子能量传递是基于电四级-电四级作用。

Abstract

SiO

:Eu phosphor was synthesized by solid-state reaction method at a mild reducing atmosphere. BaCO

SiO

were the raw materials. The results show that the optimized fabrication condition for Ba

SiO

is that Ba/Si atomic ratio should equal to 3

annealed temperature should be 1 200℃. Under 254

365

410 nm excitation

SiO

:Eu phosphor would give out broadband emission(centered at 566 nm

related to Eu ion 4f

-1

5d4f

)

and the absolute PL quantum yields are 70%

50%

10% respectively. The photoluminescent lifetime is 10

ns. The excitation monitored by 566 nm has a broadband emission in the range of 250-450 nm centered at 360 nm

with a small peak at 410 nm. The optimal Eu dopant content is 5%. From the curve of luminescent intensity

. dopant content

the energy transfer way of activator in Ba

SiO

can be deduced as electric quadrupole-quadrupole interaction.

关键词

Keywords

references

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