Perovskite Light-emitting Devices Based on CuSCN Hole Injection Layer

WU Yan-ting; XIAO Ze-wu; REN Jie; WANG Qi; YANG Xiao-hui

doi:10.3788/fgxb20194004.0504

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Perovskite Light-emitting Devices Based on CuSCN Hole Injection Layer

Device Fabrication and Physics | 更新时间：2020-08-12

- Perovskite Light-emitting Devices Based on CuSCN Hole Injection Layer
- Chinese Journal of Luminescence Vol. 40, Issue 4, Pages: 504-510(2019)
- 作者机构：
  
  西南大学物理科学与技术学院重庆,400715
- 作者简介：
- 基金信息：
  
  Supported by National Natural Science Foundation of China(61177030,11474232)
- DOI：10.3788/fgxb20194004.0504
  CLC： O472
- Received：05 June 2018，
  
  Revised：20 September 2018，
  
  Published Online：26 September 2018，
  
  Published：05 April 2019
- 稿件说明：
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吴燕婷, 肖择武, 任杰等. 以硫氰酸亚铜作为空穴注入层的钙钛矿发光器件[J]. 发光学报, 2019,40(4): 504-510

WU Yan-ting, XIAO Ze-wu, REN Jie etc. Perovskite Light-emitting Devices Based on CuSCN Hole Injection Layer[J]. Chinese Journal of Luminescence, 2019,40(4): 504-510
吴燕婷, 肖择武, 任杰等. 以硫氰酸亚铜作为空穴注入层的钙钛矿发光器件[J]. 发光学报, 2019,40(4): 504-510 DOI： 10.3788/fgxb20194004.0504.

WU Yan-ting, XIAO Ze-wu, REN Jie etc. Perovskite Light-emitting Devices Based on CuSCN Hole Injection Layer[J]. Chinese Journal of Luminescence, 2019,40(4): 504-510 DOI： 10.3788/fgxb20194004.0504.

摘要

同有机电荷注入材料相比，无机电荷注入材料具有许多优良的性质，包括高载流子迁移率、良好的稳定性、制备简单和成本低廉等，其在光电器件中的应用备受瞩目。本文采用硫氰酸亚铜（CuSCN）作为有机金属卤化物钙钛矿发光器件的空穴注入层，研究了在其上涂敷钙钛矿薄膜的形貌、晶体结构和光物理性质，并与在普遍采用的导电聚合物空穴注入层上制备钙钛矿薄膜的特性进行了比较。实验结果表明，CuSCN对钙钛矿发光具有显著的猝灭作用，在CuSCN与钙钛矿层之间加入有机间隔层能够明显提高钙钛矿薄膜的发光强度。在此基础上制备了以CuSCN作为空穴注入层的发光器件，器件的最大发光效率为11.7 cd/A，较采用导电聚合物作为空穴注入层器件的效率提高了近3倍，并且器件驱动稳定性也有一定程度的提高。

Abstract

Compared with their organic counterparts

inorganic charge injection materials possess many tempting properties including high charge carrier mobility

good stability

simple preparation

and low cost

and their applications in optoelectronic devices have been extensively studied. It is reported that cuprous thiocyanate(CuSCN) is utilized as hole injection layer for organometal halide perovskite light-emitting devices. The morphology

crystallite structure

and photo-physics properties of the perovskite films deposited onto CuSCN layer have been studied and further compared with the attributes of the analogs on top of a conducing polymer hole injection layer. The results show that CuSCN has a significant quenching effect on perovskite luminescence. Adding a polymer hole-transporting interlayer between CuSCN and perovskite layer can largely increase the perovskite emission intensity. On this basis

it is reported that the maximum luminous efficiency of the CuSCN-based devices is 11.7 cd/A

nearly 3 times that of the conducting polymer hole injection layer analogs

and the device stability is also improved.

关键词

Keywords

references

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