Inkjet Printed Metal Oxide Heterojunction Thin-film Transistor

YANG Wen-yu; ZHANG Guo-cheng; CUI Yu; CHEN Hui-peng

doi:10.3788/fgxb20194004.0497

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Inkjet Printed Metal Oxide Heterojunction Thin-film Transistor

Device Fabrication and Physics | 更新时间：2020-08-12

- Inkjet Printed Metal Oxide Heterojunction Thin-film Transistor
- Chinese Journal of Luminescence Vol. 40, Issue 4, Pages: 497-503(2019)
- 作者机构：
  
  1. 福州大学平板显示技术国家地方联合工程实验室,福建福州,350108
  2. 福建工程学院微电子技术研究中心,福建福州,350118
  3. 长春工程技术学院,吉林长春,130012
- 作者简介：
- 基金信息：
  
  Supported by National Key Research and Development Program of China(2016YFB0401103);Natural Science Foundation of Fujian Province(2016J01749)
- DOI：10.3788/fgxb20194004.0497
  CLC： TN321+.5
- Received：27 December 2018，
  
  Revised：10 February 2019，
  
  Published Online：18 January 2019，
  
  Published：05 April 2019
- 稿件说明：
移动端阅览
杨文宇, 张国成, 崔宇等. 喷墨打印金属氧化物异质结晶体管[J]. 发光学报, 2019,40(4): 497-503

YANG Wen-yu, ZHANG Guo-cheng, CUI Yu etc. Inkjet Printed Metal Oxide Heterojunction Thin-film Transistor[J]. Chinese Journal of Luminescence, 2019,40(4): 497-503
杨文宇, 张国成, 崔宇等. 喷墨打印金属氧化物异质结晶体管[J]. 发光学报, 2019,40(4): 497-503 DOI： 10.3788/fgxb20194004.0497.

YANG Wen-yu, ZHANG Guo-cheng, CUI Yu etc. Inkjet Printed Metal Oxide Heterojunction Thin-film Transistor[J]. Chinese Journal of Luminescence, 2019,40(4): 497-503 DOI： 10.3788/fgxb20194004.0497.

摘要

通过用喷墨打印制备的ZnO/IGZO异质结代替单层半导体沟道克服了氧化物缺陷导致的电子传输限制。ZnO/IGZO异质结晶体管表现出带状电子传输，迁移率比单层IGZO或ZnO TFT分别增大了约9倍和19倍，达到6.42 cm

/（Vs）。开关比分别增大了2个和4个数量级，达到1.810

。性能的显著改善源自于IGZO和ZnO异质界面间由于导带的大偏移量而形成的二维电子气。

Abstract

In this work

the electron transport limitations caused by oxide defects was overcome by replacing single layer semiconductor channel with a ZnO/IGZO heterojunction prepared by inkjet printing. It was found that ZnO/IGZO transistor exhibited banded electron transport

and the mobility was increased by about 9 times and 19 times

respectively

to 6.42 cm

/(Vs) compared with single layer IGZO or ZnO TFT. The switch ratio was increased by 2 and 4 orders of magnitude respectively

which can reach 1.810

. Significant improvement in performance was associated with the two-dimensional electron gas formed between the IGZO and ZnO heterointerfaces due to the large offset of the conduction band.

关键词

Keywords

references

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