Preparation and Grid Optimization of Photosensitive Gate GaN Based HEMT Devices

ZHU Yan-xu; LI Lai-long; BAI Xin-he; SONG Hui-hui; SHI Dong; YANG Zhuang; YANG Zhong

doi:10.3788/fgxb20194003.0311

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Preparation and Grid Optimization of Photosensitive Gate GaN Based HEMT Devices

Device Fabrication and Physics | 更新时间：2020-08-12

- Preparation and Grid Optimization of Photosensitive Gate GaN Based HEMT Devices
- Chinese Journal of Luminescence Vol. 40, Issue 3, Pages: 311-316(2019)
- 作者机构：
  
  1. 北京工业大学光电子技术教育部重点实验室北京,100124
  2. 中国移动通信集团广东有限公司惠州分公司,广东惠州,516000
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20194003.0311
  CLC： TN386.3
- Received：18 April 2018，
  
  Revised：20 June 2018，
  
  Published Online：27 June 2018，
  
  Published：05 March 2019
- 稿件说明：
移动端阅览
朱彦旭, 李赉龙, 白新和等. 感光栅极GaN基HEMT器件的制备与栅极优化[J]. 发光学报, 2019,40(3): 311-316

ZHU Yan-xu, LI Lai-long, BAI Xin-he etc. Preparation and Grid Optimization of Photosensitive Gate GaN Based HEMT Devices[J]. Chinese Journal of Luminescence, 2019,40(3): 311-316
朱彦旭, 李赉龙, 白新和等. 感光栅极GaN基HEMT器件的制备与栅极优化[J]. 发光学报, 2019,40(3): 311-316 DOI： 10.3788/fgxb20194003.0311.

ZHU Yan-xu, LI Lai-long, BAI Xin-he etc. Preparation and Grid Optimization of Photosensitive Gate GaN Based HEMT Devices[J]. Chinese Journal of Luminescence, 2019,40(3): 311-316 DOI： 10.3788/fgxb20194003.0311.

摘要

铁电材料作为感光功能薄膜的红外器件研究近年来十分活跃，其良好的压电、铁电、热释电、光电及非线性光学特性以及能够与半导体工艺相集成等特点，在微电子和光电子技术领域有着广阔的应用前景。实验将铁电材料锆钛酸铅作为感光层与GaN基高电子迁移率晶体管（HEMT）相结合，成功地制备出了感光栅极GaN基HEMT器件，并在波长为365 nm的光照下进行探测，经大量实验测试后发现器件在该波段的光照下饱和电流达到28 mA，相比无光照时饱和电流提高12 mA。另外，通过合理改变器件结构尺寸，包括器件栅长以及栅漏间距，发现随着栅长的增大，器件的饱和输出电流依次减小，而栅漏间距的变化对阈值电压以及饱和电流的影响并不大。由此可知，改变器件结构参数可以达到提高器件性能的目的并且可以提高探测效率。

Abstract

Ferroelectric materials have been very active in recent years as the infrared devices of photosensitive films. Their good piezoelectricity

ferroelectric

pyroelectric

photoelectric and nonlinear optical properties

and the integration of semiconductor technology

have a broad application prospect in the field of microelectronics and optoelectronic technology. The experiment combined the ferroelectric material lead zirconate titanate as the photosensitive layer and the GaN base high electron mobility transistor (HEMT). The photosensitive gate GaN based HEMT device was successfully prepared and detected under the light wavelength of 365 nm. After a large number of experimental tests

the light illumination of the device was found in this band. The saturation current reaches 28 mA

and the saturation current is increased by 12 mA compared with that without illumination. In addition

by reasonably changing the size of the device structure

including the gate length and the gate leakage distance

it is found that the saturation output current decreases in turn with the increase of the gate length

while the effect of the gap between the gate leakage distance on the threshold voltage and the saturation current is not significant. It can be seen that changing the device structure parameters can improve the performance of the device and the detection efficiency.

关键词

Keywords

references

POLLA D L,YE C P,TAMAGAWA T. Surface-micromachined PbTiO3 pyroelectric detectors[J]. Appl. Phys. Lett., 1991,59(27):3539-3541.

ROBIN T,MESARWI A,WU N J,et al.. Y1Ba2Cu3O6+ growth on thin Y-enhanced SiO2 buffer layers onsilicon[J]. Appl. Phys. Lett., 1991,59(18):2323-2325.

LIN H,WU N J,GEIGER F,et al.. Photoresponse and fast optical readout for a PbZrxTi1-xO3/YBa2Cu3O7-x thin-film heterostructure capacitor[J]. Appl. Phys. Lett., 1995,66(10):1172-1174.

ZOMORRODIAN A R,LIN H,WU N J,et al.. High temperature polarization retention of a Pb(Zr0.52Ti0.48)O3/YBa2Cu3O7-x memory cell[J]. Appl. Phys. Lett., 1996,69(12):1789-1791.

MYERS S B,BANDYOPADHYAY A,FRASER J D. Micromachining of PZT MEMS[J]. Am. Ceram. Soc., 2003,82:30-35.

WHATMORER W. Pyroelectric devices and materials[J]. Rep. Prog. Phys., 1986,49(12):1335-1386.

杨彪,刘向鑫,李辉. 铁电半导体耦合光伏器件的历史与最新进展[J]. 物理学报, 2015,64(3):038807-1-11. YANG B,LIU X X,LI H. History and latest development of ferro electric-semiconductor coupled photovoltaic devices[J].Acta Phys. Sinica, 2015,64(3):038807-1-11. (in Chinese)

FRUNZA R,RICINSCHI D,GHEORGHIU F,et al.. Preparation and characterisation of PZT films by RF-magnetron sputtering[J]. J. Alloys Compd., 2011,509(21):6242-6246.

李飞. Fe-Al合金中调幅分解与有序化共存相变行为的研究[D]. 哈尔滨:哈尔滨工业大学, 2015. LI F. The Research on The Phase Transformation of Sponodal Decompoition and Ordering Coexistence in The Fe-Al Alloy[D]. Harbin:Harbin Institute of Technology, 2015. (in Chinese)

MATSUNAGA T,HOSOKAWA T,UMETANI Y,et al.. Structural investigation of Pby(Zr0.57Ti0.43)2-yO3 films deposited on Pt(001)/MgO(001) substrates by rf sputtering[J]. Phys. Rev. B, 2002,66(6):064102-1-8.

RUDEN P P,ALBRECHT J D,SUTANDI A,et al.. Extrinsic performance limitations of AlGaN/GaN heterostructure field effect transistors[J]. MRS Internet J. Nitride Semicond. Res., 1999,4(S1):6-35.

WU Y F,KAPOLENK D,IBBETSON J P,et al.. Very-high power density AlGaN/GaN HEMTs[J]. IEEE Trans. Electron. Dev., 2001,48(3):586-590.

JIANG Y N,CHEN Q S,PRASAD V. Numerical simulation of ammonothermal growth processes of GaN crystals[J]. J. Cryst. Growth, 2011,318(1):411-414.

NEAMEN D A.半导体物理与器件[M]. 赵毅强,姚素英,解晓东,译. 北京:电子工业出版社, 2010:211-212. NEAMEN D A. Semiconductor Physics and Devices:Basic Principles[M]. ZHAO Y Q,YAO S Y,XIE X D,trans. Beijing:Electronics Industry Press, 2010:211-212. (in Chinese)

王冲,张金风,杨燕,等. 变温C-V和传输线模型测量研究AlGaN/GaN HEMT温度特性[J]. 半导体学报, 2006,27(5):864-868. WANG C,ZHANG J C,YANG Y,et al.. Temperature characteristics of AlGaN/GaN HEMTs using C-V and TLM for evaluating temperatures[J]. Chin. J. Semicond., 2006,27(5):864-868. (in Chinese)

于宁,王红航,刘飞飞,等. GaN HEMT器件结构的研究进展[J]. 发光学报, 2015,36(10):1178-1187. YU N,WANG H H,LIU F F,et al.. Research progress of GaN HEMT device structure[J]. Chin. J. Lumin., 2015,36(10):1178-1187. (in Chinese)

PARK P S,RAJAN S. Simulation of short-channel effects in N-and Ga-polar AlGaN/GaN HEMTs[J]. IEEE Trans. Electron. Dev., 2011,58(3):704-708.

QIAO H,YUAN J,XU Z Q,et al.. Broadband photodetectors based on graphene-Bi2Te3 heterostructure[J]. ACS Nano,2015,9(2):1886-1894.

HU W D,CHEN X S,YIN F,et al.. Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors[J]. J. Appl. Phys., 2009,105(8):084502-1-7.

VETURY R,ZHANG N Q,KELLER S,et al.. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs[J]. IEEE Trans. Electron Dev., 2001,48(3):560-566.

冯嘉鹏,赵红东,孙渤,等. GaN基HEMT器件的优化设计[J]. 半导体技术, 2014,39(11):817-821. FENG J P,ZHAO H D,SUN B,et al.. Optimal design of GaN-based HEMT devices[J]. Semicond. Technol., 2014,39(11):817-821. (in Chinese)

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