Influence of Annealing Temperatures on Properties of Novel W-Zn-Sn-O Thin Film Transistor
Device Fabrication and Physics|更新时间:2020-08-12
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Influence of Annealing Temperatures on Properties of Novel W-Zn-Sn-O Thin Film Transistor
Chinese Journal of LuminescenceVol. 40, Issue 2, Pages: 209-214(2019)
作者机构:
1. 上海大学 材料科学与工程学院, 上海 200072
2. 上海大学 上海市新型显示设计制造与系统集成专业技术服务平台, 上海 200072
3. 上海微电子装备集团有限公司, 上海 200072
作者简介:
基金信息:
Supported by National Key Research and Development Program of China 2016YFB0401105);National Natural Science Foundation of China(61674101);Shanghai Science and Technology Commission(17DZ2291500);Shanghai Excellent Academic/Technical Leader Program(18XD1424400)
YANG Xiang, XU Bing, ZHOU Chang etc. Influence of Annealing Temperatures on Properties of Novel W-Zn-Sn-O Thin Film Transistor[J]. Chinese Journal of Luminescence, 2019,40(2): 209-214
YANG Xiang, XU Bing, ZHOU Chang etc. Influence of Annealing Temperatures on Properties of Novel W-Zn-Sn-O Thin Film Transistor[J]. Chinese Journal of Luminescence, 2019,40(2): 209-214 DOI: 10.3788/fgxb20194002.0209.
Influence of Annealing Temperatures on Properties of Novel W-Zn-Sn-O Thin Film Transistor
Novel tungsten-zinc-tin-oxide(WZTO) thin film transistors(TFTs) are fabricated by solution process and the influence of annealing temperatures on WZTO films and TFTs is thorough investigated. XRD results show that the WZTO films are amorphous when annealing temperature reaches 500℃. The W doping significantly reduced the surface roughness of the ZTO films and its roughness of root-mean-square decreased from 0.9 nm to less than 0.5 nm. The transmittance of WZTO is more than 85%. In addition
XPS analysis confirmed that annealing treatment remarkably improved the oxygen vacancy of WZTO film which resulted in the increase of carrier concentration in films. The threshold voltage of devices reduces from 8.04 V to 3.48 V. The mobility of devices changes with the increase of annealing temperatures and the ratio of ON-state current and OFF-state current is about 10
7
.
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references
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