Evaluation of Beam Quality M2 for 976 nm Wide Stripe High Power Semiconductor Laser

YAN Hong-yu; GAO Xin; SONG Jian; ZHANG Xiao-lei; ZHANG Zhe-ming; XU Yu-meng; GU Hua-xin; LIU Li-ning; BO Bao-xue

doi:10.3788/fgxb20194002.0196

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Evaluation of Beam Quality M² for 976 nm Wide Stripe High Power Semiconductor Laser

Device Fabrication and Physics | 更新时间：2020-08-12

- Evaluation of Beam Quality M² for 976 nm Wide Stripe High Power Semiconductor Laser
- Chinese Journal of Luminescence Vol. 40, Issue 2, Pages: 196-203(2019)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
- 作者简介：
- 基金信息：
  
  National Key Research and Development Program(2017YFB0405100)
- DOI：10.3788/fgxb20194002.0196
  CLC： TN248.4
- Received：17 July 2018，
  
  Revised：16 October 2018，
  
  Published Online：15 October 2018，
  
  Published：05 February 2019
- 稿件说明：
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闫宏宇, 高欣, 宋健等. 976 nm宽条形高功率半导体激光器的光束质量M2评价[J]. 发光学报, 2019,40(2): 196-203

YAN Hong-yu, GAO Xin, SONG Jian etc. Evaluation of Beam Quality M2 for 976 nm Wide Stripe High Power Semiconductor Laser[J]. Chinese Journal of Luminescence, 2019,40(2): 196-203
闫宏宇, 高欣, 宋健等. 976 nm宽条形高功率半导体激光器的光束质量M2评价[J]. 发光学报, 2019,40(2): 196-203 DOI： 10.3788/fgxb20194002.0196.

YAN Hong-yu, GAO Xin, SONG Jian etc. Evaluation of Beam Quality M2 for 976 nm Wide Stripe High Power Semiconductor Laser[J]. Chinese Journal of Luminescence, 2019,40(2): 196-203 DOI： 10.3788/fgxb20194002.0196.

摘要

为了提高976 nm宽条形高功率半导体激光器的光束质量，基于严格的二阶矩理论搭建了一套适用于高功率半导体激光器的光束质量检测装置。利用该装置测量了实验室研制的976 nm宽条形高功率半导体激光器在1~10 A工作电流下的束腰位置、束腰尺寸和远场发散角。实验结果表明，随着电流从1 A增加到10 A，快轴方向束宽及远场发散角由于反导引效应有微小增加，但由于垂直方向较强的折射率导引机制使得光束参数变化很小，光束质量因子

仅从1.32增加到1.48，光束质量基本不变。慢轴方向由于反导引效应及热透镜效应而导致高阶模式激射，使得束宽及远场发散角随工作电流增加逐渐增大，光束质量因子

从5.44增加到11.76，光束质量逐渐变差。傍轴光束定义及非傍轴光束定义下的光束质量因子测试结果表明，在快轴方向，两者差别较大，不能使用傍轴光束定义近似计算；在慢轴方向，两者近似相等，可以使用傍轴光束定义近似计算。

Abstract

In order to improve the beam quality of 976 nm wide stripe high power semiconductor laser

a beam quality measurement setup for high power semiconductor lasers is constructed based on the strict second moment theory. This setup is used to measure the beam waist position

beam waist size and far field divergence angle of 976 nm wide stripe high power semiconductor lasers prepared by our lab. The experimental result shows that with the increase of current from 1 A to 10 A

the fast axis beam width and far-field divergence angle increase slightly due to the anti-guidance effect

but the beam parameters change very small because of the strong refractive index guidance mechanism in the vertical direction. The beam quality is almost unchanged

when the beam quality factor

is only increased from 1.32 to 1.48. In slow axis direction

the beam width and far field divergence angle increase gradually with the increase of operating current due to the high-order mode lasing caused by the anti-guidance effect and the thermal lens effect. The beam quality becomes worse

when the beam quality factor

is increased from 5.44 to 11.76. The difference of the beam quality factor is compared with the definition of paraxial beam and non-paraxial beam. The results show that there is an obvious difference by different beam definitions in the fast axis direction and the paraxial beam definition is not suitable for the calculation. In the direction of slow axis

the results are approximately equal and can be approximately calculated by using the paraxial beam definition.

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Keywords

references

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